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Results: 1-10 |
Results: 10
BE+ IMPLANTED GAINASSB GASB PHOTODIODES
Authors: PEROTIN M GOUSKOV L LUQUET H BARANOV A HAMMADI Z
Citation: M. Perotin et al., BE+ IMPLANTED GAINASSB GASB PHOTODIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 40(1), 1996, pp. 63-66
PHOTODETECTION AT 3.65 MU-M IN THE ATMOSPHERIC WINDOW USING INAS0.91SB0.09 GAAS HETEROEPITAXY/
Authors: PODLECKI J GOUSKOV L PASCAL F PASCALDELANNOY F GIANI A
Citation: J. Podlecki et al., PHOTODETECTION AT 3.65 MU-M IN THE ATMOSPHERIC WINDOW USING INAS0.91SB0.09 GAAS HETEROEPITAXY/, Semiconductor science and technology, 11(7), 1996, pp. 1127-1130
NEAR-INFRARED ELECTROABSORPTION IN P(+) N(-)/N(+) GASB DIODES/
Authors: GOUSKOV L PEROTIN M ALMUNEAU G LUQUET H
Citation: L. Gouskov et al., NEAR-INFRARED ELECTROABSORPTION IN P(+) N(-)/N(+) GASB DIODES/, Journal of applied physics, 79(1), 1996, pp. 49-52
ELABORATION AND CHARACTERIZATION OF INASSB GROWN ON GASB AND GAAS SUBSTRATES
Authors: GIANI A PODLECKI J PASCALDELANNOY F BOUGNOT G GOUSKOV L CATINAUD C
Citation: A. Giani et al., ELABORATION AND CHARACTERIZATION OF INASSB GROWN ON GASB AND GAAS SUBSTRATES, Journal of crystal growth, 148(1-2), 1995, pp. 25-30
CALCULATION OF ALLOY DISORDER INFLUENCE ON HOLE IONIZATION BEHAVIOR IN GA1-XALXSB COMPOUNDS
Authors: RMOU A LUQUET H GOUSKOV L PEROTIN M COUDRAY P
Citation: A. Rmou et al., CALCULATION OF ALLOY DISORDER INFLUENCE ON HOLE IONIZATION BEHAVIOR IN GA1-XALXSB COMPOUNDS, JPN J A P 1, 33(8), 1994, pp. 4657-4661
OPTICAL AND ELECTRICAL CHARACTERIZATION OF THICK GASB BUFFER LAYERS GROWN ON 2-IN GAAS WAFERS
Authors: ROYO F GIANI A PASCALDELANNOY F GOUSKOV L MALZAC JP CAMASSEL J
Citation: F. Royo et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF THICK GASB BUFFER LAYERS GROWN ON 2-IN GAAS WAFERS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 169-173
IMPROVEMENT OF DARK CURRENT OF GA(AL)SB MESA DIODES USING (NH4)(2)S TREATMENT
Authors: PEROTIN M COUDRAY P ETCHEBERRY A GOUSKOV L DEBIEMMECHOUVY C LUQUET H
Citation: M. Perotin et al., IMPROVEMENT OF DARK CURRENT OF GA(AL)SB MESA DIODES USING (NH4)(2)S TREATMENT, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 374-378
PASSIVATION OF GASB BY SULFUR TREATMENT
Authors: PEROTIN M COUDRAY P GOUSKOV L LUQUET H LLINARES C BONNET JJ SOONCKINDT L LAMBERT B
Citation: M. Perotin et al., PASSIVATION OF GASB BY SULFUR TREATMENT, Journal of electronic materials, 23(1), 1994, pp. 7-12
BE-IMPLANTATION IN GA(AL)SB LAYERS - RADIATION-DAMAGE( ION)
Authors: PEROTIN M PEREZ A LUQUET H GOUSKOV L SABIR A COUDRAY P
Citation: M. Perotin et al., BE-IMPLANTATION IN GA(AL)SB LAYERS - RADIATION-DAMAGE( ION), Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 53-57
DEPENDENCE OF IMPACT IONIZATION COEFFICIENTS ON ELECTRIC-FIELD PROFILE AND INJECTION MODE-APPROXIMATIONS
Authors: LUQUET H GOUSKOV L PEROTIN M KARIM M RMOU A MOTTET S
Citation: H. Luquet et al., DEPENDENCE OF IMPACT IONIZATION COEFFICIENTS ON ELECTRIC-FIELD PROFILE AND INJECTION MODE-APPROXIMATIONS, Journal of applied physics, 74(1), 1993, pp. 635-638
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