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Results: 1-10 |
Results: 10
CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS
Authors: KISSINGER G VANHELLEMONT J LAMBERT U GRAF D GRABOLLA T RICHTER H
Citation: G. Kissinger et al., CONDITIONS FOR THE FORMATION OF RING-LIKE DISTRIBUTED STACKING-FAULTSIN CZ-SI WAFERS, JPN J A P 2, 37(3B), 1998, pp. 306-308
SIMS DEPTH PROFILING OF VERTICAL P-CHANNEL SI-MOS TRANSISTOR STRUCTURES
Authors: ZASTROW U LOO R SZOT R MOERS J GRABOLLA T BEHAMMER D VESCAN L
Citation: U. Zastrow et al., SIMS DEPTH PROFILING OF VERTICAL P-CHANNEL SI-MOS TRANSISTOR STRUCTURES, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 203-207
HIGH-FIELD STRESSING OF LPCVD GATE OXIDES
Authors: RAO VR EISELE I PATRIKAR RM SHARMA DK VASI J GRABOLLA T
Citation: Vr. Rao et al., HIGH-FIELD STRESSING OF LPCVD GATE OXIDES, IEEE electron device letters, 18(3), 1997, pp. 84-86
KEY INFLUENCE OF THE THERMAL HISTORY ON PROCESS-INDUCED DEFECTS IN CZOCHRALSKI SILICON-WAFERS
Authors: KISSINGER G GRAF D LAMBERT U GRABOLLA T RICHTER H
Citation: G. Kissinger et al., KEY INFLUENCE OF THE THERMAL HISTORY ON PROCESS-INDUCED DEFECTS IN CZOCHRALSKI SILICON-WAFERS, Semiconductor science and technology, 12(7), 1997, pp. 933-937
CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS
Authors: RAO VR HANSCH W BAUMGARTNER H EISELE I SHARMA DK VASI J GRABOLLA T
Citation: Vr. Rao et al., CHARGE TRAPPING BEHAVIOR IN DEPOSITED AND GROWN THIN METAL-OXIDE-SEMICONDUCTOR GATE DIELECTRICS, Thin solid films, 296(1-2), 1997, pp. 37-40
VERTICAL SI P-MOS TRANSISTOR SELECTIVELY GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION
Authors: LOO R VESCAN L BEHAMMER D MOERS J GRABOLLA T LANGEN W KLAES D ZASTROW U KORDOS P
Citation: R. Loo et al., VERTICAL SI P-MOS TRANSISTOR SELECTIVELY GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 267-270
NITROGEN INCORPORATION DURING N2O-OXIDATION AND NO-OXIDATION OF SILICON AT TEMPERATURES DOWN TO 600-DEGREES-C
Authors: WEIDNER G KRUGER D WEIDNER M GRABOLLA T
Citation: G. Weidner et al., NITROGEN INCORPORATION DURING N2O-OXIDATION AND NO-OXIDATION OF SILICON AT TEMPERATURES DOWN TO 600-DEGREES-C, Microelectronics, 27(7), 1996, pp. 647-656
SELECTIVELY GROWN VERTICAL SI-P MOS-TRANSISTOR WITH SHORT-CHANNEL LENGTHS
Authors: BEHAMMER D VESCAN L LOO R MOERS J MUCK A LUTH H GRABOLLA T
Citation: D. Behammer et al., SELECTIVELY GROWN VERTICAL SI-P MOS-TRANSISTOR WITH SHORT-CHANNEL LENGTHS, Electronics Letters, 32(4), 1996, pp. 406-407
NITROGEN ACCUMULATION AT THERMALLY GROWN OR OXIDE ON SILICON BY N2O-OXIDATION OR NO-OXIDATION CHEMICAL-VAPOR-DEPOSITED
Authors: WEIDNER G KRUGER D WEIDNER M GRABOLLA T SORGE R
Citation: G. Weidner et al., NITROGEN ACCUMULATION AT THERMALLY GROWN OR OXIDE ON SILICON BY N2O-OXIDATION OR NO-OXIDATION CHEMICAL-VAPOR-DEPOSITED, Microelectronic engineering, 28(1-4), 1995, pp. 133-136
VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS
Authors: GOSSNER H WITTMANN F EISELE I GRABOLLA T BEHAMMER D
Citation: H. Gossner et al., VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS, Electronics Letters, 31(16), 1995, pp. 1394-1396
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