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Results: 1-24 |
Results: 24
NOVEL CHARACTERISTICS OF SELF-ASSEMBLED INAS QUANTUM DOTS GROWN ON (311)A GAAS
Authors: SANGUINETTI S FORTINA SC GRILLI E GUZZI M HENINI M UPWARD MD MORIARTY P BETON PH EAVES L
Citation: S. Sanguinetti et al., NOVEL CHARACTERISTICS OF SELF-ASSEMBLED INAS QUANTUM DOTS GROWN ON (311)A GAAS, Microelectronic engineering, 43-4, 1998, pp. 45-49
PHOTOLUMINESCENCE OF SELF-ORGANIZED INAS GAAS QUANTAM DOTS GROWN ON (N11)B SURFACES/
Authors: SANGUINETTI S FORTINA SC GRILLI E GUZZI M HENINI M EAVES L
Citation: S. Sanguinetti et al., PHOTOLUMINESCENCE OF SELF-ORGANIZED INAS GAAS QUANTAM DOTS GROWN ON (N11)B SURFACES/, Microelectronic engineering, 43-4, 1998, pp. 67-70
DIRECT-AND INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XSB (X-LESS-THAN-OR-EQUAL-TO-0.41)
Authors: BIGNAZZI A GRILLI E GUZZI M BOCCHI C BOSACCHI A FRANCHI S MAGNANINI R
Citation: A. Bignazzi et al., DIRECT-AND INDIRECT-ENERGY-GAP DEPENDENCE ON AL CONCENTRATION IN ALXGA1-XSB (X-LESS-THAN-OR-EQUAL-TO-0.41), Physical review. B, Condensed matter, 57(4), 1998, pp. 2295-2301
OPTICAL ANISOTROPY IN ARROW-SHAPED INAS QUANTUM DOTS
Authors: HENINI M SANGUINETTI S FORTINA SC GRILLI E GUZZI M PANZARINI G ANDREANI LC UPWARD MD MORIARTY P BETON PH EAVES L
Citation: M. Henini et al., OPTICAL ANISOTROPY IN ARROW-SHAPED INAS QUANTUM DOTS, Physical review. B, Condensed matter, 57(12), 1998, pp. 6815-6818
INAS QUANTUM DOTS GROWN ON NONCONVENTIONALLY ORIENTED GAAS SUBSTRATES
Authors: FORTINA SC SANGUINETTI S GRILLI E GUZZI M HENINI M POLIMENI A EAVES L
Citation: Sc. Fortina et al., INAS QUANTUM DOTS GROWN ON NONCONVENTIONALLY ORIENTED GAAS SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 126-132
EXCITONIC EFFECTS IN THIOPHENE OLIGOMERS
Authors: BOSISIO R BOTTA C COLOMBO A DESTRI S PORZIO W GRILLI E TUBINO R BONGIOVANNI G MURA A DISILVESTRO G
Citation: R. Bosisio et al., EXCITONIC EFFECTS IN THIOPHENE OLIGOMERS, Synthetic metals, 87(1), 1997, pp. 23-29
INVESTIGATION OF SI AS AN N-TYPE DOPANT IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON HIGH-INDEX PLANES
Authors: GALBIATI N GRILLI E GUZZI M ALBERTINI P BRUSAFERRI L PAVESI L HENINI M GASPAROTTO A
Citation: N. Galbiati et al., INVESTIGATION OF SI AS AN N-TYPE DOPANT IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON HIGH-INDEX PLANES, Semiconductor science and technology, 12(5), 1997, pp. 555-563
A NEW SIMPLE AND LOW-COST SCATTERED TRANSMISSION ACCESSORY FOR COMMERCIAL DOUBLE-BEAM ULTRAVIOLET-VISIBLE SPECTROPHOTOMETERS
Authors: CASTIGLIONI E GRILLI E SANGUINETTI S
Citation: E. Castiglioni et al., A NEW SIMPLE AND LOW-COST SCATTERED TRANSMISSION ACCESSORY FOR COMMERCIAL DOUBLE-BEAM ULTRAVIOLET-VISIBLE SPECTROPHOTOMETERS, Review of scientific instruments, 68(11), 1997, pp. 4288-4289
STRUCTURAL AND OPTICAL CHARACTERIZATION OF SELF-ASSEMBLED INAS-GAAS QUANTUM DOTS GROWN ON HIGH-INDEX SURFACES
Authors: HENINI M SANGUINETTI S BRUSAFERRI L GRILLI E GUZZI M UPWARD MD MORIARTY P BETON PH
Citation: M. Henini et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF SELF-ASSEMBLED INAS-GAAS QUANTUM DOTS GROWN ON HIGH-INDEX SURFACES, Microelectronics, 28(8-10), 1997, pp. 933-938
IS THE BE INCORPORATION THE SAME IN (311)A AND (100)ALGAAS
Authors: GALBIATI N GRILLI E GUZZI M HENINI M PAVESI L
Citation: N. Galbiati et al., IS THE BE INCORPORATION THE SAME IN (311)A AND (100)ALGAAS, Microelectronics, 28(8-10), 1997, pp. 993-998
PHOTOLUMINESCENCE INVESTIGATION OF P-TYPE SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)A, (211)A AND (311)A GAAS-SURFACES
Authors: HENINI M GALBIATI N GRILLI E GUZZI M PAVESI L
Citation: M. Henini et al., PHOTOLUMINESCENCE INVESTIGATION OF P-TYPE SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)A, (211)A AND (311)A GAAS-SURFACES, Journal of crystal growth, 175, 1997, pp. 1108-1113
PHOTOLUMINESCENCE DETERMINATION OF THE BE BINDING-ENERGY IN DIRECT-GAP ALGAAS
Authors: GALBIATI N GATTI C GRILLI E GUZZI M PAVESI L HENINI M
Citation: N. Galbiati et al., PHOTOLUMINESCENCE DETERMINATION OF THE BE BINDING-ENERGY IN DIRECT-GAP ALGAAS, Applied physics letters, 71(21), 1997, pp. 3120-3122
PHOTOLUMINESCENCE INVESTIGATION OF SI AS P-TYPE DOPANT IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON HIGH-INDEX PLANES
Authors: GALBIATI N GRILLI E GUZZI M BRUSAFERRI L PAVESI L HENINI M
Citation: N. Galbiati et al., PHOTOLUMINESCENCE INVESTIGATION OF SI AS P-TYPE DOPANT IN ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY ON HIGH-INDEX PLANES, Semiconductor science and technology, 11(12), 1996, pp. 1830-1837
PHOTOLUMINESCENCE STUDIES OF LIGHT-EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS
Authors: MUTTI P GHISLOTTI G MEDA L GRILLI E GUZZI M ZANGHIERI L CUBEDDU R PIFFERI A TARONI P TORRICELLI A
Citation: P. Mutti et al., PHOTOLUMINESCENCE STUDIES OF LIGHT-EMISSION FROM SILICON IMPLANTED AND ANNEALED SIO2 LAYERS, Thin solid films, 276(1-2), 1996, pp. 88-91
A SUBMILLIMETER POLYCHROMATOR FOR PLASMA SPECTROSCOPY
Authors: TUDISCO O BERTON F BURATTI P GRILLI E MANTOVANI S
Citation: O. Tudisco et al., A SUBMILLIMETER POLYCHROMATOR FOR PLASMA SPECTROSCOPY, Review of scientific instruments, 67(9), 1996, pp. 3108-3116
FOURIER-TRANSFORM SPECTROSCOPY APPLIED TO PHOTOLUMINESCENCE - ADVANTAGES AND WARNINGS
Authors: BIGNAZZI A GRILLI E RADICE M GUZZI M CASTIGLIONI E
Citation: A. Bignazzi et al., FOURIER-TRANSFORM SPECTROSCOPY APPLIED TO PHOTOLUMINESCENCE - ADVANTAGES AND WARNINGS, Review of scientific instruments, 67(3), 1996, pp. 666-671
LOW-TEMPERATURE PHOTOLUMINESCENCE OF TELLURIUM-DOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BIGNAZZI A GRILLI E GUZZI M RADICE M BOSACCHI A FRANCHI S MAGNANINI R
Citation: A. Bignazzi et al., LOW-TEMPERATURE PHOTOLUMINESCENCE OF TELLURIUM-DOPED GASB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 169(3), 1996, pp. 450-456
BE DOPING OF (311)A AND (100) AL0.24GA0.76AS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: GALBIATI N PAVESI L GRILLI E GUZZI M HENINI M
Citation: N. Galbiati et al., BE DOPING OF (311)A AND (100) AL0.24GA0.76AS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(27), 1996, pp. 4215-4217
THERMALLY ACTIVATED CARRIER TRANSFER AND LUMINESCENCE LINE-SHAPE IN SELF-ORGANIZED INAS QUANTUM DOTS
Authors: BRUSAFERRI L SANGUINETTI S GRILLI E GUZZI M BIGNAZZI A BOGANI F CARRARESI L COLOCCI M BOSACCHI A FRIGERI P FRANCHI S
Citation: L. Brusaferri et al., THERMALLY ACTIVATED CARRIER TRANSFER AND LUMINESCENCE LINE-SHAPE IN SELF-ORGANIZED INAS QUANTUM DOTS, Applied physics letters, 69(22), 1996, pp. 3354-3356
GAAS IMPLANTED WITH SILICON AND CARBON - ELECTRICAL AND OPTICAL CHARACTERIZATION
Authors: ABATE F CASTELLI A GRILLI E GUZZI M SEVERGNINI C
Citation: F. Abate et al., GAAS IMPLANTED WITH SILICON AND CARBON - ELECTRICAL AND OPTICAL CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 204-211
ROOM-TEMPERATURE VISIBLE LUMINESCENCE FROM SILICON NANOCRYSTALS IN SILICON IMPLANTED SIO2 LAYERS
Authors: MUTTI P GHISLOTTI G BERTONI S BONOLDI L CEROFOLINI GF MEDA L GRILLI E GUZZI M
Citation: P. Mutti et al., ROOM-TEMPERATURE VISIBLE LUMINESCENCE FROM SILICON NANOCRYSTALS IN SILICON IMPLANTED SIO2 LAYERS, Applied physics letters, 66(7), 1995, pp. 851-853
PASSIVATION OF SHALLOW AND DEEP LEVELS BY HYDROGEN PLASMA EXPOSURE INALGAAS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BOSACCHI A FRANCHI S GOMBIA E MOSCA R BIGNAZZI A GRILLI E GUZZI M ZAMBONI R
Citation: A. Bosacchi et al., PASSIVATION OF SHALLOW AND DEEP LEVELS BY HYDROGEN PLASMA EXPOSURE INALGAAS GROWN BY MOLECULAR-BEAM EPITAXY, JPN J A P 1, 33(6A), 1994, pp. 3348-3353
EFFECTS OF HYDROGENATION OF DEEP AND SHALLOW LEVELS IN ALGAAS GROWN BY MBE
Authors: BOSACCHI A FRANCHI S GOMBIA E MOSCA R BIGNAZZI A GRILLI E GUZZI M ZAMBONI R
Citation: A. Bosacchi et al., EFFECTS OF HYDROGENATION OF DEEP AND SHALLOW LEVELS IN ALGAAS GROWN BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 425-428
LIGHT-INDUCED REACTIVATION OF SHALLOW ACCEPTORS IN HYDROGENATED N-TYPE ALXGA1-XAS
Authors: AIROLDI M GRILLI E GUZZI M BIGNAZZI A BOSACCHI A FRANCHI S
Citation: M. Airoldi et al., LIGHT-INDUCED REACTIVATION OF SHALLOW ACCEPTORS IN HYDROGENATED N-TYPE ALXGA1-XAS, Physica status solidi. a, Applied research, 144(2), 1994, pp. 401-413
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