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Results: 1-25 | 26-42
Results: 1-25/42
MAGNESIUM-RELATED LUMINESCENCE IN SILICON
Authors: STEINMAN EA GRIMMEISS HG
Citation: Ea. Steinman et Hg. Grimmeiss, MAGNESIUM-RELATED LUMINESCENCE IN SILICON, Semiconductor science and technology, 13(3), 1998, pp. 329-333
DISLOCATION-RELATED LUMINESCENCE PROPERTIES OF SILICON
Authors: STEINMAN EA GRIMMEISS HG
Citation: Ea. Steinman et Hg. Grimmeiss, DISLOCATION-RELATED LUMINESCENCE PROPERTIES OF SILICON, Semiconductor science and technology, 13(1), 1998, pp. 124-129
NEUTRAL INTERSTITIAL IRON CENTER IN SILICON STUDIED BY ZEEMAN SPECTROSCOPY
Authors: THILDERKVIST A GROSSMANN G KLEVERMAN M GRIMMEISS HG
Citation: A. Thilderkvist et al., NEUTRAL INTERSTITIAL IRON CENTER IN SILICON STUDIED BY ZEEMAN SPECTROSCOPY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7723-7733
SI-1-X-Y GE-X C-Y - A NEW MATERIAL FOR FUTURE MICROELECTRONICS
Authors: GRIMMEISS HG OLAJOS J
Citation: Hg. Grimmeiss et J. Olajos, SI-1-X-Y GE-X C-Y - A NEW MATERIAL FOR FUTURE MICROELECTRONICS, Physica scripta. T, T69, 1997, pp. 52-59
SI1-X-Y GE-X C-Y - A NEW MATERIAL FOR FUTURE MICROELECTRONICS (VOL T69, PG 52, 1997)
Authors: GRIMMEISS HG OLAJOS J EBERL K
Citation: Hg. Grimmeiss et al., SI1-X-Y GE-X C-Y - A NEW MATERIAL FOR FUTURE MICROELECTRONICS (VOL T69, PG 52, 1997), Physica scripta. T, 55(6), 1997, pp. 763-763
CORRELATION OF ELECTRICAL AND OPTICAL-PROPERTIES OF THE VANADIUM-RELATED C-LEVEL IN SILICON
Authors: PASSLER R PETTERSSON H GRIMMEISS HG SCHMALZ K
Citation: R. Passler et al., CORRELATION OF ELECTRICAL AND OPTICAL-PROPERTIES OF THE VANADIUM-RELATED C-LEVEL IN SILICON, Physical review. B, Condensed matter, 55(7), 1997, pp. 4312-4322
ELECTRON-CAPTURE PROPERTIES OF MULTI-DX LEVELS IN SI DOPED ALGAAS
Authors: JIA YB GRIMMEISS HG
Citation: Yb. Jia et Hg. Grimmeiss, ELECTRON-CAPTURE PROPERTIES OF MULTI-DX LEVELS IN SI DOPED ALGAAS, Solid state communications, 101(10), 1997, pp. 771-774
HETEROSTRUCTURES IN SEMICONDUCTORS - PROCEEDINGS OF NOBEL-SYMPOSIUM-99 - ARILD, SWEDEN, JUNE 4-8, 1996 - OPENING ADDRESS
Authors: GRIMMEISS HG
Citation: Hg. Grimmeiss, HETEROSTRUCTURES IN SEMICONDUCTORS - PROCEEDINGS OF NOBEL-SYMPOSIUM-99 - ARILD, SWEDEN, JUNE 4-8, 1996 - OPENING ADDRESS, Physica scripta. T, T68, 1996, pp. 9-9
THE EXCITATION SPECTRUM OF THE TRIGONAL AND THE ORTHORHOMBIC FEIN CENTERS IN SILICON
Authors: TIDLUND P KLEVERMAN M GRIMMEISS HG
Citation: P. Tidlund et al., THE EXCITATION SPECTRUM OF THE TRIGONAL AND THE ORTHORHOMBIC FEIN CENTERS IN SILICON, Semiconductor science and technology, 11(5), 1996, pp. 748-752
A TRANSIENT CAPACITANCE-VOLTAGE METHOD FOR CHARACTERIZING DX CENTERS
Authors: JIA YB GRIMMEISS HG LI MF
Citation: Yb. Jia et al., A TRANSIENT CAPACITANCE-VOLTAGE METHOD FOR CHARACTERIZING DX CENTERS, Semiconductor science and technology, 11(12), 1996, pp. 1787-1790
PERPENDICULAR ELECTRON-TRANSPORT IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS STUDIED BY JUNCTION SPACE-CHARGE TECHNIQUES/
Authors: JIA YB GRIMMEISS HG HAN ZY DOBACZEWSKI L
Citation: Yb. Jia et al., PERPENDICULAR ELECTRON-TRANSPORT IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS STUDIED BY JUNCTION SPACE-CHARGE TECHNIQUES/, Semiconductor science and technology, 11(11), 1996, pp. 1672-1677
FRANCK-CONDON SHIFT AND TEMPERATURE-DEPENDENCE OF THE ZERO-PHONON BINDING-ENERGY OF THE DEEP SELENIUM CENTER IN SILICON
Authors: PASSLER R PETTERSSON H GRIMMEISS HG
Citation: R. Passler et al., FRANCK-CONDON SHIFT AND TEMPERATURE-DEPENDENCE OF THE ZERO-PHONON BINDING-ENERGY OF THE DEEP SELENIUM CENTER IN SILICON, Semiconductor science and technology, 11(10), 1996, pp. 1388-1395
OPTICAL ANISOTROPIES IN STRAINED SI SIGE SYSTEMS/
Authors: OLAJOS J ENGVALL J GRIMMEISS HG KIBBEL H PRESTING H
Citation: J. Olajos et al., OPTICAL ANISOTROPIES IN STRAINED SI SIGE SYSTEMS/, Applied surface science, 102, 1996, pp. 283-287
CONFINEMENT EFFECTS AND POLARIZATION DEPENDENCE OF LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS
Authors: OLAJOS J ENGVALL J GRIMMEISS HG GAIL M ABSTREITER G PRESTING H KIBBEL H
Citation: J. Olajos et al., CONFINEMENT EFFECTS AND POLARIZATION DEPENDENCE OF LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1922-1927
OPTICAL-PROPERTIES OF STRAINED INP QUANTUM DOTS IN GA0.5IN0.5P STUDIED BY SPACE-CHARGE TECHNIQUES
Authors: PETTERSSON H ANAND S GRIMMEISS HG SAMUELSON L
Citation: H. Pettersson et al., OPTICAL-PROPERTIES OF STRAINED INP QUANTUM DOTS IN GA0.5IN0.5P STUDIED BY SPACE-CHARGE TECHNIQUES, Physical review. B, Condensed matter, 53(16), 1996, pp. 10497-10500
TEMPERATURE-DEPENDENCE OF OPTICAL-PROPERTIES OF THE DEEP SULFUR CENTER IN SILICON
Authors: PETTERSSON H PASSLER R BLASCHTA F GRIMMEISS HG
Citation: H. Pettersson et al., TEMPERATURE-DEPENDENCE OF OPTICAL-PROPERTIES OF THE DEEP SULFUR CENTER IN SILICON, Journal of applied physics, 80(9), 1996, pp. 5312-5317
METASTABLE STATES OF SI DONORS IN ALXGA1-XAS
Authors: JIA YB GRIMMEISS HG
Citation: Yb. Jia et Hg. Grimmeiss, METASTABLE STATES OF SI DONORS IN ALXGA1-XAS, Journal of applied physics, 80(8), 1996, pp. 4395-4399
OPTICAL ANISOTROPY OF SIGE SUPERLATTICES
Authors: ENGVALL J OLAJOS J GRIMMEISS HG PRESTING H KIBBEL H
Citation: J. Engvall et al., OPTICAL ANISOTROPY OF SIGE SUPERLATTICES, Journal of applied physics, 80(7), 1996, pp. 4012-4018
PHOTOEXCITED STATES OF DX CENTERS IN SI DOPED ALXGA1-XAS
Authors: JIA YB GRIMMEISS HG
Citation: Yb. Jia et Hg. Grimmeiss, PHOTOEXCITED STATES OF DX CENTERS IN SI DOPED ALXGA1-XAS, Journal of applied physics, 80(6), 1996, pp. 3493-3503
DEEP LEVELS IN UNIFORMLY SI DOPED GAAS ALXGA1-XAS QUANTUM-WELLS AND SUPERLATTICES/
Authors: JIA YB HAN ZY GRIMMEISS HG DOBACZEWSKI L
Citation: Yb. Jia et al., DEEP LEVELS IN UNIFORMLY SI DOPED GAAS ALXGA1-XAS QUANTUM-WELLS AND SUPERLATTICES/, Journal of applied physics, 80(5), 1996, pp. 2860-2865
DEEP ACCEPTOR-LIKE STATES IN SI DOPED MOLECULAR-BEAM-EPITAXIAL-GROWN ALXGA1-XAS
Authors: JIA YB GRIMMEISS HG DOBACZEWSKI L
Citation: Yb. Jia et al., DEEP ACCEPTOR-LIKE STATES IN SI DOPED MOLECULAR-BEAM-EPITAXIAL-GROWN ALXGA1-XAS, Journal of applied physics, 80(2), 1996, pp. 859-863
SIGE - A PROMISE INTO REALITY
Authors: GRIMMEISS HG OLAJOS J ENGVALL J
Citation: Hg. Grimmeiss et al., SIGE - A PROMISE INTO REALITY, Acta Physica Polonica. A, 88(4), 1995, pp. 567-580
LONG-WAVELENGTH ACOUSTIC-MODE-ENHANCED ELECTRON-EMISSION FROM SE AND TE DONORS IN SILICON
Authors: KOROTCHENKOV OA GRIMMEISS HG
Citation: Oa. Korotchenkov et Hg. Grimmeiss, LONG-WAVELENGTH ACOUSTIC-MODE-ENHANCED ELECTRON-EMISSION FROM SE AND TE DONORS IN SILICON, Physical review. B, Condensed matter, 52(20), 1995, pp. 14598-14606
LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS EMBEDDED IN SI
Authors: ENGVALL J OLAJOS J GRIMMEISS HG KIBBEL H PRESTING H
Citation: J. Engvall et al., LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS EMBEDDED IN SI, Physical review. B, Condensed matter, 51(3), 1995, pp. 2001-2004
DISLOCATION-RELATED ELECTROLUMINESCENCE AT ROOM-TEMPERATURE IN PLASTICALLY DEFORMED SILICON
Authors: KVEDER VV STEINMAN EA SHEVCHENKO SA GRIMMEISS HG
Citation: Vv. Kveder et al., DISLOCATION-RELATED ELECTROLUMINESCENCE AT ROOM-TEMPERATURE IN PLASTICALLY DEFORMED SILICON, Physical review. B, Condensed matter, 51(16), 1995, pp. 10520-10526
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