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Results:
1-16
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Results: 16
Authors:
GRIVICKAS V
Citation: V. Grivickas, AN ACCURATE METHOD FOR DETERMINING INTRINSIC OPTICAL-ABSORPTION IN INDIRECT BAND-GAP SEMICONDUCTORS, Solid state communications, 108(8), 1998, pp. 561-566
Authors:
GRIVICKAS V
LINNROS J
LALIC N
TELLEFSEN JA
GRIVICKAS P
Citation: V. Grivickas et al., RELEVANCE OF THE CARRIER TRANSPORT CHANGE IN POROUS SILICON AT THE ONSET OF ONE EXCITED PAIR PER CRYSTALLITE, Thin solid films, 297(1-2), 1997, pp. 125-128
Authors:
LINNROS J
GALECKAS A
LALIC N
GRIVICKAS V
Citation: J. Linnros et al., TIME-RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION OF NM-SIZED SILICON CRYSTALLITES IN SIO2, Thin solid films, 297(1-2), 1997, pp. 167-170
Authors:
GALECKAS A
GRIVICKAS V
LINNROS J
BLEICHNER H
HALLIN C
Citation: A. Galeckas et al., FREE-CARRIER ABSORPTION AND LIFETIME MAPPING IN 4H SIC EPILAYERS, Journal of applied physics, 81(8), 1997, pp. 3522-3525
Authors:
GALECKAS A
LINNROS J
GRIVICKAS V
LINDEFELT U
HALLIN C
Citation: A. Galeckas et al., AUGER RECOMBINATION IN 4H-SIC - UNUSUAL TEMPERATURE BEHAVIOR, Applied physics letters, 71(22), 1997, pp. 3269-3271
Authors:
GRIVICKAS V
NOREIKA D
LINNROS J
TELLEFSEN JA
Citation: V. Grivickas et al., FOURIER TRANSIENT GRATING IN SEMICONDUCTORS WITH NONLINEAR CARRIER RECOMBINATION, Semiconductor science and technology, 11(11), 1996, pp. 1725-1733
Authors:
GRIVICKAS V
THUNGSTROM G
BIKBAJEVAS V
LINNROS J
NOREIKA D
Citation: V. Grivickas et al., CHARACTERIZATION OF SI WAFER BONDING BY INJECTION-DEPENDENT RECOMBINATION VELOCITY, JPN J A P 2, 34(7A), 1995, pp. 806-809
Authors:
GRIVICKAS V
LINNROS J
Citation: V. Grivickas et J. Linnros, FREE-CARRIER ABSORPTION AND LUMINESCENCE DECAY OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 70-73
Authors:
GRIVICKAS V
LINNROS J
TELLEFSEN JA
Citation: V. Grivickas et al., LOW-TEMPERATURE FATIGUE OF PHOTOLUMINESCENCE IN AGED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 208-211
Authors:
GRIVICKAS V
BARANAUSKAS V
RODRIGES CR
BASMAJI P
MISOGUTI L
Citation: V. Grivickas et al., ATOMIC-FORCE MICROSCOPY STUDIES ON VARIOUS TYPES OF PHOTOLUMINESCENT POROUS SILICON, International journal of optoelectronics, 9(4), 1994, pp. 303-309
Authors:
GRIVICKAS V
BERNUSSI A
BASMAJI P
MATVIENKO B
KOLENDA J
Citation: V. Grivickas et al., DEGRADATION OF LUMINESCENCE AND FATIGUE EFFECTS IN POROUS SILICON, International journal of optoelectronics, 9(4), 1994, pp. 311-314
Authors:
LINNROS J
GRIVICKAS V
Citation: J. Linnros et V. Grivickas, CARRIER-DIFFUSION MEASUREMENTS IN SILICON WITH A FOURIER-TRANSIENT-GRATING METHOD, Physical review. B, Condensed matter, 50(23), 1994, pp. 16943-16955
Authors:
GRIVICKAS V
BASMAJI P
Citation: V. Grivickas et P. Basmaji, OPTICAL-ABSORPTION IN POROUS SILICON OF HIGH-POROSITY, Thin solid films, 235(1-2), 1993, pp. 234-238
Authors:
BASMAJI P
BAGNATO VS
GRIVICKAS V
SURDUTOVICH GI
VITLINA R
Citation: P. Basmaji et al., DETERMINATION OF POROUS SILICON FILM PARAMETERS BY POLARIZED-LIGHT REFLECTANCE MEASUREMENTS, Thin solid films, 233(1-2), 1993, pp. 131-136
Authors:
BASMAJI P
MATVIENKO B
GRIVICKAS V
Citation: P. Basmaji et al., ION INCORPORATION AND EXCHANGE EFFECTS IN POROUS SILICON, Solid state communications, 87(2), 1993, pp. 89-92
Authors:
FRAGALLI JF
MISOGUTI L
NAKAGAITO AN
GRIVICKAS V
BAGNATO VS
BRANZ HM
Citation: Jf. Fragalli et al., HYDROGENATED AMORPHOUS-SILICON FILMS BY 60 HZ GLOW-DISCHARGE DEPOSITION, Journal of applied physics, 74(1), 1993, pp. 668-671
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1-16
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