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Results: 1-25 | 26-26
Results: 1-25/26
X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., X-RAY-ABSORPTION AT GE L-3 EDGES AS A TOOL TO INVESTIGATE GE SI(001) INTERFACES AND HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1616-1620
LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING
Authors: DECRESCENZI M GUNNELLA R CASTRUCCI P DAVOLI I
Citation: M. Decrescenzi et al., LOCAL STRUCTURAL INVESTIGATION OF SILICON SURFACES BY ELECTRON-SCATTERING, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 20(7-8), 1998, pp. 991-998
SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/
Authors: GUNNELLA R CASTRUCCI P PINTO N CUCCULELLI P DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/, Surface review and letters, 5(1), 1998, pp. 157-161
ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE 6H-SIC(0001) SURFACES
Authors: GUNNELLA R VEUILLEN JY BERTHET A TAN TAN
Citation: R. Gunnella et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE 6H-SIC(0001) SURFACES, Surface review and letters, 5(1), 1998, pp. 187-191
FIRST STAGES OF LOW-TEMPERATURE AND LOW-PRESSURE CARBONIZATION OF SI (001) IN ACETYLENE
Authors: STEDILE FC ROCHET F PONCEY C DUFOUR G GUNNELLA R DECRESCENZI M FROMENT M
Citation: Fc. Stedile et al., FIRST STAGES OF LOW-TEMPERATURE AND LOW-PRESSURE CARBONIZATION OF SI (001) IN ACETYLENE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 301-307
EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/
Authors: CASTRUCCI P GUNNELLA R DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EXCHANGE MECHANISMS AT THE GE SI(001) INTERFACE FROM A MULTIPLE-SCATTERING ANALYSIS OF THE GE L-3 ABSORPTION-EDGE/, Physical review. B, Condensed matter, 58(7), 1998, pp. 4095-4101
ORIGIN OF THE BUCKLING IN THE C(2X2)-SI CU(110) SURFACE ALLOY/
Authors: ROJAS C POLOP C ROMAN E MARTINGAGO JA GUNNELLA R BRENA B COCCO D PAOLUCCI G
Citation: C. Rojas et al., ORIGIN OF THE BUCKLING IN THE C(2X2)-SI CU(110) SURFACE ALLOY/, Physical review. B, Condensed matter, 57(8), 1998, pp. 4493-4499
X-RAY-ABSORPTION SPECTROSCOPY STUDY OF ATOMIC-STRUCTURE OF EPITAXIAL ERSI1.7(0001) ON SI(111)
Authors: GUNNELLA R VEUILLEN JY TAN TAN FLANK AM
Citation: R. Gunnella et al., X-RAY-ABSORPTION SPECTROSCOPY STUDY OF ATOMIC-STRUCTURE OF EPITAXIAL ERSI1.7(0001) ON SI(111), Physical review. B, Condensed matter, 57(7), 1998, pp. 4154-4159
SURFACE-CORE-LEVEL-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - THE 2X1-SI(001) SURFACE
Authors: GUNNELLA R BULLOCK EL PATTHEY L NATOLI CR ABUKAWA T KONO S JOHANSSON LSO
Citation: R. Gunnella et al., SURFACE-CORE-LEVEL-SHIFT LOW-ENERGY PHOTOELECTRON DIFFRACTION - THE 2X1-SI(001) SURFACE, Physical review. B, Condensed matter, 57(23), 1998, pp. 14739-14748
EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE
Authors: CASTRUCCI P GUNNELLA R PINTO N DECRESCENZI M SACCHI M DUFOUR G ROCHET F
Citation: P. Castrucci et al., EVIDENCE OF ORDERED PHASE OF GE-SI HETEROSTRUCTURES BY X-RAY-ABSORPTION SPECTROSCOPY AT GE L-3 EDGE, Surface science, 416(3), 1998, pp. 466-471
EVIDENCE FOR THE SUPPRESSION OF INCIDENT BEAM EFFECTS IN AUGER-ELECTRON DIFFRACTION
Authors: DAVOLI I GUNNELLA R BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., EVIDENCE FOR THE SUPPRESSION OF INCIDENT BEAM EFFECTS IN AUGER-ELECTRON DIFFRACTION, Surface science, 396(1-3), 1998, pp. 221-226
LOW KINETIC-ENERGY AED - A TOOL FOR THE STUDY OF GE EPITAXIAL LAYERS GROWN ON SB-TERMINATED SI(111) SURFACE
Authors: DAVOLI I GUNNELLA R BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., LOW KINETIC-ENERGY AED - A TOOL FOR THE STUDY OF GE EPITAXIAL LAYERS GROWN ON SB-TERMINATED SI(111) SURFACE, Journal of electron spectroscopy and related phenomena, 83(2-3), 1997, pp. 137-142
SIC FORMATION BY REACTION OF SI(001) WITH ACETYLENE - ELECTRONIC-STRUCTURE AND GROWTH MODE
Authors: DUFOUR G ROCHET F STEDILE FC PONCEY C DECRESCENZI M GUNNELLA R FROMENT M
Citation: G. Dufour et al., SIC FORMATION BY REACTION OF SI(001) WITH ACETYLENE - ELECTRONIC-STRUCTURE AND GROWTH MODE, Physical review. B, Condensed matter, 56(7), 1997, pp. 4266-4282
SURFACE CORE-LEVEL SHIFT PHOTOELECTRON DIFFRACTION FROM AS SI(111)/
Authors: JOHANSSON LSO GUNNELLA R BULLOCK EL NATOLI CR UHRBERG RIG
Citation: Lso. Johansson et al., SURFACE CORE-LEVEL SHIFT PHOTOELECTRON DIFFRACTION FROM AS SI(111)/, Applied surface science, 104, 1996, pp. 88-94
XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/
Authors: DAVOLI I GUNNELLA R CASTRUCCI P PINTO N BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., XPD STUDY OF ATOMIC INTERMIXING AT THE GE SI(001) INTERFACE/, Applied surface science, 102, 1996, pp. 102-106
X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/
Authors: GUNNELLA R CASTRUCCI P PINTO N DAVOLI I SEBILLEAU D DECRESCENZI M
Citation: R. Gunnella et al., X-RAY PHOTOELECTRON-DIFFRACTION STUDY OF INTERMIXING AND MORPHOLOGY AT THE GE SI(001) AND GE/SB/SI(001) INTERFACE/, Physical review. B, Condensed matter, 54(12), 1996, pp. 8882-8891
EXTENDED FINE-STRUCTURE IN SECONDARY BACKSCATTERED ELECTRONS
Authors: DECRESENZI M COLONNA S GUNNELLA R FANFONI M
Citation: M. Decresenzi et al., EXTENDED FINE-STRUCTURE IN SECONDARY BACKSCATTERED ELECTRONS, Progress in Surface Science, 53(2-4), 1996, pp. 253-264
THE AS SI(111) SURFACE STUDIED BY ANGLE SCANNED LOW-ENERGY PHOTOELECTRON DIFFRACTION/
Authors: GUNNELLA R BULLOCK EL NATOLI CR UHRBERG RIG JOHANSSON LSO
Citation: R. Gunnella et al., THE AS SI(111) SURFACE STUDIED BY ANGLE SCANNED LOW-ENERGY PHOTOELECTRON DIFFRACTION/, Surface science, 352, 1996, pp. 332-336
ANGLE DEPENDENCE OF THE SPIN-ORBIT BRANCHING RATIO
Authors: BULLOCK EL GUNNELLA R NATOLI CR YEOM HW KONO S PATTHEY L UHRBERG RIG JOHANSSON LSO
Citation: El. Bullock et al., ANGLE DEPENDENCE OF THE SPIN-ORBIT BRANCHING RATIO, Surface science, 352, 1996, pp. 352-357
STRUCTURAL SURFACE INVESTIGATION WITH LOW-ENERGY BACKSCATTERED ELECTRONS
Authors: DECRESCENZI M GUNNELLA R DAVOLI I
Citation: M. Decrescenzi et al., STRUCTURAL SURFACE INVESTIGATION WITH LOW-ENERGY BACKSCATTERED ELECTRONS, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 29-36
INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001)
Authors: DAVOLI I GUNNELLA R CASTRUCCI P BERNARDINI R DECRESCENZI M
Citation: I. Davoli et al., INCIDENT BEAM EFFECTS IN AED (AUGER-ELECTRON DIFFRACTION) - THE CASE OF CU(001), Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 493-497
AUGER-ELECTRON DIFFRACTION IN THE LOW KINETIC-ENERGY RANGE - THE SI(111)7X7 SURFACE RECONSTRUCTION AND GE SI INTERFACE FORMATION/
Authors: DECRESCENZI M GUNNELLA R BERNARDINI R DEMARCO M DAVOLI I
Citation: M. Decrescenzi et al., AUGER-ELECTRON DIFFRACTION IN THE LOW KINETIC-ENERGY RANGE - THE SI(111)7X7 SURFACE RECONSTRUCTION AND GE SI INTERFACE FORMATION/, Physical review. B, Condensed matter, 52(3), 1995, pp. 1806-1815
INELASTIC PROCESSES VERSUS DIFFRACTION EFFECTS - POLAR-ANGLE ENERGY-LOSS SPECTRA OF THE GRAPHITE K-EDGE
Authors: GUNNELLA R DAVOLI I BERNARDINI R DECRESCENZI M
Citation: R. Gunnella et al., INELASTIC PROCESSES VERSUS DIFFRACTION EFFECTS - POLAR-ANGLE ENERGY-LOSS SPECTRA OF THE GRAPHITE K-EDGE, Physical review. B, Condensed matter, 52(24), 1995, pp. 17091-17098
SURFACE CORE-LEVEL PHOTOELECTRON DIFFRACTION FROM SI DIMERS AT THE SI(001)-(2X1) SURFACE
Authors: BULLOCK EL GUNNELLA R PATTHEY L ABUKAWA T KONO S NATOLI CR JOHANSSON LSO
Citation: El. Bullock et al., SURFACE CORE-LEVEL PHOTOELECTRON DIFFRACTION FROM SI DIMERS AT THE SI(001)-(2X1) SURFACE, Physical review letters, 74(14), 1995, pp. 2756-2759
ANGULAR-DEPENDENCE OF THE EXFAS (EXTENDED FINE AUGER STRUCTURE) IN MGO(100) SURFACES - SHORT-RANGE ORDER VERSUS DIFFRACTION EFFECTS
Authors: DAVOLI I BERNARDINI R BATTISTONI C CASTRUCCI P GUNNELLA R DECRESCENZI M
Citation: I. Davoli et al., ANGULAR-DEPENDENCE OF THE EXFAS (EXTENDED FINE AUGER STRUCTURE) IN MGO(100) SURFACES - SHORT-RANGE ORDER VERSUS DIFFRACTION EFFECTS, Surface science, 306(1-2), 1994, pp. 144-154
Risultati: 1-25 | 26-26