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Results: 1-13 |
Results: 13
HIGH-SPEED MONOLITHICALLY INTEGRATED P-I-N HBT PHOTORECEIVERS/
Authors: SYAO KC GUTIERREZAITKEN AL YANG K ZHANG XK HADDAD GI BHATTACHARYA PK
Citation: Kc. Syao et al., HIGH-SPEED MONOLITHICALLY INTEGRATED P-I-N HBT PHOTORECEIVERS/, IEICE transactions on electronics, E80C(5), 1997, pp. 695-702
DESIGN, MODELING, AND CHARACTERIZATION OF MONOLITHICALLY INTEGRATED INP-BASED (1.55-MU-M) HIGH-SPEED (24GB S) P-I-NMBT FRONT-END PHOTORECEIVERS/
Authors: YANG KH GUTIERREZAITKEN AL ZHANG XK HADDAD GI BHATTACHARYA P
Citation: Kh. Yang et al., DESIGN, MODELING, AND CHARACTERIZATION OF MONOLITHICALLY INTEGRATED INP-BASED (1.55-MU-M) HIGH-SPEED (24GB S) P-I-NMBT FRONT-END PHOTORECEIVERS/, Journal of lightwave technology, 14(8), 1996, pp. 1831-1839
AN HSPICE HBT MODEL FOR INP-BASED SINGLE HBTS
Authors: YANG K GUTIERREZAITKEN AL ZHANG X BATTHACHARYA P HADDAD GI
Citation: K. Yang et al., AN HSPICE HBT MODEL FOR INP-BASED SINGLE HBTS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1470-1472
RESPONSIVITY AND IMPACT IONIZATION COEFFICIENTS OF SI1-XGEX PHOTODIODES
Authors: LEE JJ GUTIERREZAITKEN AL LI SH BHATTACHARYA PK
Citation: Jj. Lee et al., RESPONSIVITY AND IMPACT IONIZATION COEFFICIENTS OF SI1-XGEX PHOTODIODES, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 977-981
LOW CROSSTALK (LESS-THAN-40DB) IN 1.55-MU-M HIGH-SPEED OEIC PHOTORECEIVER ARRAYS WITH NOVEL ON-CHIP SHIELDING
Authors: GUTIERREZAITKEN AL BHATTACHARYA P SYAO KC YANG K HADDAD GI ZHANG X
Citation: Al. Gutierrezaitken et al., LOW CROSSTALK (LESS-THAN-40DB) IN 1.55-MU-M HIGH-SPEED OEIC PHOTORECEIVER ARRAYS WITH NOVEL ON-CHIP SHIELDING, Electronics Letters, 32(18), 1996, pp. 1706-1708
0.98-MU-M MULTIQUANTUM-WELL TUNNELING INJECTION-LASERS WITH ULTRA-HIGH MODULATION BANDWIDTHS
Authors: ZHANG X GUTIERREZAITKEN AL KLOTZKIN D BHATTACHARYA P CANEAU C BHAT R
Citation: X. Zhang et al., 0.98-MU-M MULTIQUANTUM-WELL TUNNELING INJECTION-LASERS WITH ULTRA-HIGH MODULATION BANDWIDTHS, Electronics Letters, 32(18), 1996, pp. 1715-1717
A COLD INP-BASED TUNNELING INJECTION-LASER WITH GREATLY REDUCED AUGERRECOMBINATION AND TEMPERATURE-DEPENDENCE
Authors: YOON H GUTIERREZAITKEN AL JAMBUNATHAN R SINGH J BHATTACHARYA PK
Citation: H. Yoon et al., A COLD INP-BASED TUNNELING INJECTION-LASER WITH GREATLY REDUCED AUGERRECOMBINATION AND TEMPERATURE-DEPENDENCE, IEEE photonics technology letters, 7(9), 1995, pp. 974-976
16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N HBT PHOTORECEIVER/
Authors: GUTIERREZAITKEN AL YANG K ZHANG X HADDAD GI BHATTACHARYA P LUNARDI LM
Citation: Al. Gutierrezaitken et al., 16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N HBT PHOTORECEIVER/, IEEE photonics technology letters, 7(11), 1995, pp. 1339-1341
IMPACT IONIZATION COEFFICIENTS IN SI1-XGEX
Authors: LEE J GUTIERREZAITKEN AL LI SH BHATTACHARYA PK
Citation: J. Lee et al., IMPACT IONIZATION COEFFICIENTS IN SI1-XGEX, Applied physics letters, 66(2), 1995, pp. 204-205
7.1 GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER/
Authors: COWLES J GUTIERREZAITKEN AL BHATTACHARYA P HADDAD GI
Citation: J. Cowles et al., 7.1 GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER/, IEEE photonics technology letters, 6(8), 1994, pp. 963-965
7.1-GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER (VOL 6, PG 963, 1994)/
Authors: COWLES J GUTIERREZAITKEN AL BHATTACHARYA P HADDAD GI NICHOLS D DUTTA NK STANCHINA WE
Citation: J. Cowles et al., 7.1-GHZ BANDWIDTH MONOLITHICALLY INTEGRATED IN0.53GA0.47AS IN0.52AL0.48AS PIN-HBT TRANSIMPEDANCE PHOTORECEIVER (VOL 6, PG 963, 1994)/, IEEE photonics technology letters, 6(11), 1994, pp. 1395-1395
HIGH-PERFORMANCE MONOLITHIC PIN-MODFET TRANSIMPEDANCE PHOTORECEIVER
Authors: GUTIERREZAITKEN AL BHATTACHARYA P CHEN YC PAVLIDIS D BROCK T
Citation: Al. Gutierrezaitken et al., HIGH-PERFORMANCE MONOLITHIC PIN-MODFET TRANSIMPEDANCE PHOTORECEIVER, IEEE photonics technology letters, 5(8), 1993, pp. 913-915
IMPACT IONIZATION COEFFICIENTS IN STRAINED INGAAS INALAS MULTIQUANTUMWELLS/
Authors: GUTIERREZAITKEN AL BHATTACHARYA PK
Citation: Al. Gutierrezaitken et Pk. Bhattacharya, IMPACT IONIZATION COEFFICIENTS IN STRAINED INGAAS INALAS MULTIQUANTUMWELLS/, Journal of applied physics, 73(10), 1993, pp. 5014-5016
Risultati: 1-13 |