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Results: 1-5 |
Results: 5

Authors: Yadav, AD Rao, BV Dubey, SK Gadkari, DB
Citation: Ad. Yadav et al., Electrical characteristics of low energy tellurium implanted indium antimonide, MAT SCI E B, 84(3), 2001, pp. 176-181

Authors: Gadkari, DB Shashidharan, P Lal, KB Arora, BM
Citation: Db. Gadkari et al., Influence of crystal-melt interface shape on self-seeding and single crystalline quality, B MATER SCI, 24(5), 2001, pp. 475-482

Authors: Shashidharan, P Gokhale, NA Gadkari, DB Lal, KB Gokhale, MR Arora, BM
Citation: P. Shashidharan et al., Effect of In content in InxGa1-xSb on breaking of ampoule during growth byvertical directional solidification, I J PA PHYS, 39(11), 2001, pp. 704-706

Authors: Gadkari, DB Arora, BM
Citation: Db. Gadkari et Bm. Arora, Characterization of p and n-type bulk InSb crystals grown by vertical directional solidification technique, I J PA PHYS, 38(4), 2000, pp. 237-242

Authors: Gadkari, DB Shashidharan, P Lal, KB Gokhale, NA Shah, AP Arora, BM
Citation: Db. Gadkari et al., Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique, I J PA PHYS, 37(9), 1999, pp. 652-656
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