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Results: 1-18 |
Results: 18
Temperature-insensitive intersubband-transitions in InGaAs/AlAsSb multiplequantum well designed for optical communication wavelength
Authors: Neogi, A Yoshida, H Mozume, T Georgiev, N Wada, O
Citation: A. Neogi et al., Temperature-insensitive intersubband-transitions in InGaAs/AlAsSb multiplequantum well designed for optical communication wavelength, JPN J A P 2, 40(6A), 2001, pp. L558-L560
Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis
Authors: Gopal, AV Yoshida, H Neogi, A Mozume, T Georgiev, N Wada, O Ishikawa, H
Citation: Av. Gopal et al., Absorption saturation of intersubband transition in InGaAs/AlAsSb quantum well characterized by absorption spectral analysis, JPN J A P 2, 40(10A), 2001, pp. L1015-L1018
Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP
Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Optical properties of InGaAs/AlAsSb type I single quantum wells lattice matched to InP, J VAC SCI B, 19(5), 2001, pp. 1747-1751
Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells
Authors: Neogi, A Yoshida, H Mozume, T Georgiev, N Akiyama, T Tackeuchi, A Wada, O
Citation: A. Neogi et al., Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells, OPT QUANT E, 33(7-10), 2001, pp. 975-983
Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Authors: Mozume, T Georgiev, N Yoshida, H
Citation: T. Mozume et al., Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 577-581
Photoluminescence study of InGaAs/AlAsSb heterostructure
Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Photoluminescence study of InGaAs/AlAsSb heterostructure, J APPL PHYS, 89(2), 2001, pp. 1064-1069
Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation (vol 36, pg 1972, 2000)
Authors: Neogi, A Yoshida, H Mozume, T Georgiev, N Akiyama, T Wada, O
Citation: A. Neogi et al., Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation (vol 36, pg 1972, 2000), ELECTR LETT, 37(3), 2001, pp. 203-203
Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well
Authors: Gopal, AV Yoshida, H Neogi, A Mozume, T Georgiev, N Simoyama, T Wada, O Ishikawa, H
Citation: Av. Gopal et al., Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well, ELECTR LETT, 37(20), 2001, pp. 1265-1267
Nonlinearity and recovery time of 1.55 mu m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells
Authors: Akiyama, T Georgiev, N Mozume, T Yoshida, H Gopal, AV Wada, O
Citation: T. Akiyama et al., Nonlinearity and recovery time of 1.55 mu m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells, ELECTR LETT, 37(2), 2001, pp. 129-130
Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Authors: Mozume, T Georgiev, N Yoshida, H Neogi, A Nishimura, T
Citation: T. Mozume et al., Observation of direct (type-I) transitions in type-II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1586-1589
Raman scattering analysis of InGaAs/AlAsSb short-period superlattices
Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Raman scattering analysis of InGaAs/AlAsSb short-period superlattices, APPL SURF S, 159, 2000, pp. 520-527
Interface control of InGaAs/AlAsSb heterostructures
Authors: Mozume, T Georgiev, N
Citation: T. Mozume et N. Georgiev, Interface control of InGaAs/AlAsSb heterostructures, THIN SOL FI, 380(1-2), 2000, pp. 249-251
Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice
Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice, J CRYST GR, 209(2-3), 2000, pp. 247-251
Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy
Authors: Mozume, T Georgiev, N Nishimura, T Yoshida, H Nishikawa, S Neogi, A
Citation: T. Mozume et al., Photoluminescence characterization of type IIInGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 445-449
Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation
Authors: Neogi, A Yoshida, H Mozume, T Georgiev, N Akiyama, T Wada, O
Citation: A. Neogi et al., Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation, ELECTR LETT, 36(23), 2000, pp. 1972-1974
Monte Carlo simulations of the interface layer in Pb/Cu(110); a tight-binding-model calculation
Authors: Michailov, M Georgiev, N
Citation: M. Michailov et N. Georgiev, Monte Carlo simulations of the interface layer in Pb/Cu(110); a tight-binding-model calculation, J PHYS-COND, 11(49), 1999, pp. 9889-9900
Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice
Authors: Georgiev, N Mozume, T
Citation: N. Georgiev et T. Mozume, Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice, APPL PHYS L, 75(16), 1999, pp. 2371-2373
Order-disorder transition of the c (2x2) phase in the Pb/Cu(110) system: Significance of surface defects
Authors: Georgiev, N Michailov, M
Citation: N. Georgiev et M. Michailov, Order-disorder transition of the c (2x2) phase in the Pb/Cu(110) system: Significance of surface defects, PHYS REV B, 58(20), 1998, pp. 13895-13900
Risultati: 1-18 |