AAAAAA

   
Results: 1-13 |
Results: 13
Multiscale modeling of thin-film deposition: Applications to Si device processing
Authors: Baumann, FH Chopp, DL de la Rubia, TD Gilmer, GH Greene, JE Huang, H Kodambaka, S O'Sullivan, P Petrov, I
Citation: Fh. Baumann et al., Multiscale modeling of thin-film deposition: Applications to Si device processing, MRS BULL, 26(3), 2001, pp. 182-189
Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si
Authors: Pelaz, L Marques, LA Gilmer, GH Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si, NUCL INST B, 180, 2001, pp. 12-16
Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214
Authors: Marques, LA Pelaz, L Hernandez, J Barbolla, J Gilmer, GH
Citation: La. Marques et al., Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214, PHYS REV B, 6404(4), 2001, pp. 5214
Iron-acceptor pairs in silicon: Structure and formation processes
Authors: Zhao, S Assali, LVC Justo, JF Gilmer, GH Kimerling, LC
Citation: S. Zhao et al., Iron-acceptor pairs in silicon: Structure and formation processes, J APPL PHYS, 90(6), 2001, pp. 2744-2754
Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Authors: Kalyanaraman, R Haynes, TE Holland, OW Gossmann, HJL Rafferty, CS Gilmer, GH
Citation: R. Kalyanaraman et al., Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, APPL PHYS L, 79(13), 2001, pp. 1983-1985
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
Authors: Jaraiz, M Rubio, E Castrillo, P Pelaz, L Bailon, L Barbolla, J Gilmer, GH Rafferty, CS
Citation: M. Jaraiz et al., Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data, MAT SC S PR, 3(1-2), 2000, pp. 59-63
Simulation of defects and diffusion phenomena in silicon
Authors: Law, ME Gilmer, GH Jaraiz, M
Citation: Me. Law et al., Simulation of defects and diffusion phenomena in silicon, MRS BULL, 25(6), 2000, pp. 45-50
Lattice Monte Carlo models of thin film deposition
Authors: Gilmer, GH Huang, HC de la Rubia, TD Dalla Torre, J Baumann, F
Citation: Gh. Gilmer et al., Lattice Monte Carlo models of thin film deposition, THIN SOL FI, 365(2), 2000, pp. 189-200
Simulation of physical vapor deposition into trenches and vias: Validationand comparison with experiment
Authors: O'Sullivan, PL Baumann, FH Gilmer, GH
Citation: Pl. O'Sullivan et al., Simulation of physical vapor deposition into trenches and vias: Validationand comparison with experiment, J APPL PHYS, 88(7), 2000, pp. 4061-4068
Activation and deactivation of implanted B in Si
Authors: Pelaz, L Venezia, VC Gossmann, HJ Gilmer, GH Fiory, AT Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Authors: Pelaz, L Gilmer, GH Gossmann, HJ Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., B cluster formation and dissolution in Si: A scenario based on atomistic modeling, APPL PHYS L, 74(24), 1999, pp. 3657-3659
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Authors: Pelaz, L Gilmer, GH Venezia, VC Gossmann, HJ Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion, APPL PHYS L, 74(14), 1999, pp. 2017-2019
Thin film deposition: fundamentals and modeling
Authors: Gilmer, GH Huang, HC Roland, C
Citation: Gh. Gilmer et al., Thin film deposition: fundamentals and modeling, COMP MAT SC, 12(4), 1998, pp. 354-380
Risultati: 1-13 |