AAAAAA
Results:
1-12
|
Results: 12
Authors:
Page, H
Robertson, A
Sirtori, C
Becker, C
Glastre, G
Nagle, J
Citation: H. Page et al., Demonstration of (gimel approximate to 11.5-mu m) GaAs-based quantum cascade laser operating on a peltier cooled element, IEEE PHOTON, 13(6), 2001, pp. 556-558
Authors:
Spagnolo, V
Troccoli, M
Scamarcio, G
Becker, C
Glastre, G
Sirtori, C
Citation: V. Spagnolo et al., Facet temperature mapping of GaAs/AlGaAs quantum cascade lasers by photoluminescence microprobe, OPT MATER, 17(1-2), 2001, pp. 219-222
Authors:
Duboz, JY
Dua, L
Glastre, G
Legagneux, P
Massies, J
Semond, F
Grandjean, N
Citation: Jy. Duboz et al., Dielectric microcavity in GaN/Si, PHYS ST S-A, 183(1), 2001, pp. 35-39
Authors:
Marcadet, X
Rakovska, A
Prevot, I
Glastre, G
Vinter, B
Berger, V
Citation: X. Marcadet et al., MBE growth of room-temperature InAsSb mid-infrared detectors, J CRYST GR, 227, 2001, pp. 609-613
Authors:
Spagnolo, V
Troccoli, M
Scamarcio, G
Becker, C
Glastre, G
Sirtori, C
Citation: V. Spagnolo et al., Thermal resistance and temperature characteristics of GaAs/Al0.33Ga0.67As quantum-cascade lasers, APPL PHYS L, 78(9), 2001, pp. 1177-1179
Authors:
Page, H
Becker, C
Robertson, A
Glastre, G
Ortiz, V
Sirtori, C
Citation: H. Page et al., 300 K operation of a GaAs-based quantum-cascade laser at lambda approximate to 9 mu m, APPL PHYS L, 78(22), 2001, pp. 3529-3531
Authors:
Yarekha, DA
Vicet, A
Perona, A
Glastre, G
Fraisse, B
Rouillard, Y
Skouri, EM
Boissier, G
Grech, P
Joullie, A
Alibert, C
Baranov, AN
Citation: Da. Yarekha et al., High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers, SEMIC SCI T, 15(4), 2000, pp. 390-394
Authors:
Yarekha, DA
Glastre, G
Perona, A
Rouillard, Y
Genty, F
Skouri, EM
Boissier, G
Grech, P
Joullie, A
Alibert, C
Baranov, AN
Citation: Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539
Authors:
Becker, C
Sirtori, C
Page, H
Glastre, G
Ortiz, V
Marcadet, X
Stellmacher, M
Nagle, J
Citation: C. Becker et al., AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity, APPL PHYS L, 77(4), 2000, pp. 463-465
Authors:
Rakovska, A
Berger, V
Marcadet, X
Vinter, B
Glastre, G
Oksenhendler, T
Kaplan, D
Citation: A. Rakovska et al., Room temperature InAsSb photovoltaic midinfrared detector, APPL PHYS L, 77(3), 2000, pp. 397-399
Authors:
Joullie, A
Glastre, G
Blondeau, R
Nicolas, JC
Cuminal, Y
Baranov, AN
Wilk, A
Garcia, M
Grech, P
Alibert, C
Citation: A. Joullie et al., Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers, IEEE S T QU, 5(3), 1999, pp. 711-714
Authors:
Cuminal, Y
Baranov, AN
Bec, D
Grech, P
Garcia, M
Boissier, G
Joullie, A
Glastre, G
Blondeau, R
Citation: Y. Cuminal et al., Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes, SEMIC SCI T, 14(3), 1999, pp. 283-288
Risultati:
1-12
|