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Results: 1-21 |
Results: 21
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Authors: Kalyanaraman, R Haynes, TE Yoon, M Larson, BC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter, NUCL INST B, 175, 2001, pp. 182-186
Accuracy of secondary ion mass spectrometry in determining ion implanted Bdoses as confirmed by nuclear reaction analysis
Authors: Magee, CW Jacobson, D Gossmann, HJ
Citation: Cw. Magee et al., Accuracy of secondary ion mass spectrometry in determining ion implanted Bdoses as confirmed by nuclear reaction analysis, J VAC SCI B, 18(1), 2000, pp. 489-492
Series resistance limits for 0.05 mu m MOSFETs
Authors: Keys, P Gossmann, HJ Ng, KK Rafferty, CS
Citation: P. Keys et al., Series resistance limits for 0.05 mu m MOSFETs, SUPERLATT M, 27(2-3), 2000, pp. 125-136
Quantitative TEM of point defects in Si
Authors: Eaglesham, DJ Venezia, VC Gossmann, HJ Agarwal, A
Citation: Dj. Eaglesham et al., Quantitative TEM of point defects in Si, J ELEC MICR, 49(2), 2000, pp. 293-298
Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling
Authors: Kalyanaraman, R Haynes, TE Venezia, VC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling, APPL PHYS L, 76(23), 2000, pp. 3379-3381
Breaking through the electrical saturation barrier: 2D-versus 3D-doping inn-type silicon
Authors: Citrin, PH Muller, D Gossmann, HJ Vanfleet, R Northrup, PA
Citation: Ph. Citrin et al., Breaking through the electrical saturation barrier: 2D-versus 3D-doping inn-type silicon, PHYSICA B, 274, 1999, pp. 251-255
Effect of ramp rates during rapid thermal annealing of ion implanted boronfor formation of ultra-shallow junctions
Authors: Agarwal, A Gossmann, HJ Fiory, AT
Citation: A. Agarwal et al., Effect of ramp rates during rapid thermal annealing of ion implanted boronfor formation of ultra-shallow junctions, J ELEC MAT, 28(12), 1999, pp. 1333-1339
Amorphization of Si(001) by ultra low energy (0.5-5 keV) ion implantation observed with high-resolution RBS
Authors: Kimura, K Agarwal, A Toyofuku, H Nakajima, K Gossmann, HJ
Citation: K. Kimura et al., Amorphization of Si(001) by ultra low energy (0.5-5 keV) ion implantation observed with high-resolution RBS, NUCL INST B, 148(1-4), 1999, pp. 284-288
Effect of implant damage on the gate oxide thickness
Authors: Vuong, HH Bude, J Baumann, FH Evans-Lutterodt, K Ning, J Ma, Y Mcmacken, J Gossmann, HJ Silverman, P Rafferty, CS Hillenius, SJ
Citation: Hh. Vuong et al., Effect of implant damage on the gate oxide thickness, SOL ST ELEC, 43(5), 1999, pp. 985-988
Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation
Authors: Citrin, PH Muller, DA Gossmann, HJ Vanfleet, R Northrup, PA
Citation: Ph. Citrin et al., Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation, PHYS REV L, 83(16), 1999, pp. 3234-3237
Boron pileup and clustering in silicon-on-insulator films
Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085
Activation volume for antimony diffusion in silicon and implications for strained films
Authors: Zhao, YC Aziz, MJ Gossmann, HJ Mitha, S Schiferl, D
Citation: Yc. Zhao et al., Activation volume for antimony diffusion in silicon and implications for strained films, APPL PHYS L, 75(7), 1999, pp. 941-943
Activation and deactivation of implanted B in Si
Authors: Pelaz, L Venezia, VC Gossmann, HJ Gilmer, GH Fiory, AT Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Authors: Venezia, VC Haynes, TE Agarwal, A Pelaz, L Gossmann, HJ Jacobson, DC Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Authors: Pelaz, L Gilmer, GH Gossmann, HJ Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., B cluster formation and dissolution in Si: A scenario based on atomistic modeling, APPL PHYS L, 74(24), 1999, pp. 3657-3659
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
Authors: Agarwal, A Gossmann, HJ Eaglesham, DJ Herner, SB Fiory, AT Haynes, TE
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron from ultralow-energy ion implantation, APPL PHYS L, 74(17), 1999, pp. 2435-2437
Boron-enhanced diffusion of boron: Physical mechanisms
Authors: Agarwal, A Gossmann, HJ Eaglesham, DJ
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron: Physical mechanisms, APPL PHYS L, 74(16), 1999, pp. 2331-2333
Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion
Authors: Pelaz, L Gilmer, GH Venezia, VC Gossmann, HJ Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion, APPL PHYS L, 74(14), 1999, pp. 2017-2019
Activation volume for boron diffusion in silicon and implications for strained films
Authors: Zhao, YC Aziz, MJ Gossmann, HJ Mitha, S Schiferl, D
Citation: Yc. Zhao et al., Activation volume for boron diffusion in silicon and implications for strained films, APPL PHYS L, 74(1), 1999, pp. 31-33
Ultrashallow junctions in silicon using single-crystal CoSi2 as a dopant source
Authors: Herner, SB Gossmann, HJ Tung, RT Gila, BP
Citation: Sb. Herner et al., Ultrashallow junctions in silicon using single-crystal CoSi2 as a dopant source, EL SOLID ST, 1(3), 1998, pp. 150-152
Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding
Authors: Magee, CW Mount, GR Smith, SP Herner, B Gossmann, HJ
Citation: Cw. Magee et al., Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding, J VAC SCI B, 16(6), 1998, pp. 3099-3104
Risultati: 1-21 |