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Results: 1-8 |
Results: 8
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices
Authors: Litzenberger, M Pichler, R Bychikhin, S Pogany, D Gornik, E Esmark, K Gossner, H
Citation: M. Litzenberger et al., Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices, MICROEL REL, 41(9-10), 2001, pp. 1385-1390
Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology
Authors: Gossner, H Muller-Lynch, T Esmark, K Stecher, M
Citation: H. Gossner et al., Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology, MICROEL REL, 41(3), 2001, pp. 385-393
Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase
Authors: Esmark, K Stadler, W Wendel, M Gossner, H Guggenmos, X Fichtner, W
Citation: K. Esmark et al., Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase, MICROEL REL, 41(11), 2001, pp. 1761-1770
Interferometric temperature mapping during ESD stress and failure analysisof smart power technology ESD protection devices
Authors: Furbock, C Pogany, D Litzenberger, M Gornik, E Seliger, N Gossner, H Muller-Lynch, T Stecher, M Werner, W
Citation: C. Furbock et al., Interferometric temperature mapping during ESD stress and failure analysisof smart power technology ESD protection devices, J ELECTROST, 49(3-4), 2000, pp. 195-213
Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry.
Authors: Litzenberger, M Esmark, K Pogany, D Furbock, C Gossner, H Gornik, E Fichtner, W
Citation: M. Litzenberger et al., Study of triggering inhomogeneities in gg-nMOS ESD protection devices via thermal mapping using backside laser interferometry., MICROEL REL, 40(8-10), 2000, pp. 1359-1364
Bulk and surface degradation mode in 0.35 mu m technology gg-nMOS ESD protection devices.
Authors: Pogany, D Esmark, K Litzenberger, M Furbock, C Gossner, H Gornik, E
Citation: D. Pogany et al., Bulk and surface degradation mode in 0.35 mu m technology gg-nMOS ESD protection devices., MICROEL REL, 40(8-10), 2000, pp. 1467-1472
Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress
Authors: Furbock, C Litzenberger, M Pogany, D Gornik, E Seliger, N Muller-Lynch, T Stecher, M Gossner, H Werner, W
Citation: C. Furbock et al., Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, MICROEL REL, 39(6-7), 1999, pp. 925-930
Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices
Authors: Pogany, D Seliger, N Litzenberger, M Gossner, H Stecher, M Muller-Lynch, T Werner, W Gornik, E
Citation: D. Pogany et al., Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, MICROEL REL, 39(6-7), 1999, pp. 1143-1148
Risultati: 1-8 |