AAAAAA

   
Results: 1-13 |
Results: 13
Noise behavior in SiGe devices
Authors: Regis, M Borgarino, M Bary, L Llopis, O Graffeuil, J Escotte, L Koenig, U Plana, R
Citation: M. Regis et al., Noise behavior in SiGe devices, SOL ST ELEC, 45(11), 2001, pp. 1891-1897
Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs
Authors: Bary, L Borgarino, M Plana, R Parra, T Kovacic, SJ Lafontaine, H Graffeuil, J
Citation: L. Bary et al., Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs, IEEE DEVICE, 48(4), 2001, pp. 767-773
Low level and reflection phase noise measurements on a FET
Authors: Llopis, O Juraver, JB Cibiel, G Graffeuil, J
Citation: O. Llopis et al., Low level and reflection phase noise measurements on a FET, ELECTR LETT, 37(2), 2001, pp. 127-129
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
Authors: Borgarino, M Tartarin, JG Kuchenbecker, J Parra, T Lafontaine, H Kovacic, T Plana, R Graffeuil, J
Citation: M. Borgarino et al., On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors, IEEE MICR G, 10(11), 2000, pp. 466-468
Low noise bipolar complementary metal-oxide-semiconductor mixer for radio frequency applications
Authors: Colomines, S Parra, T Graffeuil, J Plana, R
Citation: S. Colomines et al., Low noise bipolar complementary metal-oxide-semiconductor mixer for radio frequency applications, J VAC SCI A, 18(3), 2000, pp. 1002-1005
Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
Authors: Borgarino, M Plana, R Fendler, M Vilcot, JP Mollot, F Barette, J Decoster, D Graffeuil, J
Citation: M. Borgarino et al., Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors, SOL ST ELEC, 44(1), 2000, pp. 59-62
Evaluation of the hot carrier/ionizing radiation induced effects on the RFcharacteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation
Authors: Kuchenbecker, J Borgarino, M Coustou, A Plana, R Graffeuil, J Fantini, F
Citation: J. Kuchenbecker et al., Evaluation of the hot carrier/ionizing radiation induced effects on the RFcharacteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation, MICROEL REL, 40(8-10), 2000, pp. 1579-1584
An improved method for the wave propagation constant gamma estimation in broadband uniform millimeter-wave transmission line
Authors: Reynoso-Hernandez, JA Estrada-Maldonado, CF Parra, T Grenier, K Graffeuil, J
Citation: Ja. Reynoso-hernandez et al., An improved method for the wave propagation constant gamma estimation in broadband uniform millimeter-wave transmission line, MICROW OPT, 22(4), 1999, pp. 268-271
Phase noise performance of microwave analog frequency dividers applicationto the characterization of oscillators up to the millimeter-wave range
Authors: Regis, OLM Desgrez, S Graffeuil, J
Citation: Olm. Regis et al., Phase noise performance of microwave analog frequency dividers applicationto the characterization of oscillators up to the millimeter-wave range, IEEE ULTRAS, 46(4), 1999, pp. 935-940
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors
Authors: Borgarino, M Plana, R Delage, S Fantini, F Graffeuil, J
Citation: M. Borgarino et al., On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors, MICROEL REL, 39(12), 1999, pp. 1823-1832
A cost-effective technique for extending the low-frequency range of a microwave noise parameter test set
Authors: Escotte, L Tartarin, JG Graffeuil, J
Citation: L. Escotte et al., A cost-effective technique for extending the low-frequency range of a microwave noise parameter test set, IEEE INSTR, 48(4), 1999, pp. 830-834
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's
Authors: Borgarino, M Plana, R Delage, SL Fantini, F Graffeuil, J
Citation: M. Borgarino et al., Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's, IEEE DEVICE, 46(1), 1999, pp. 10-16
Ka band micromachined dielectric resonator oscillator
Authors: Guillon, B Cros, D Pons, P Cazaux, JL Lalaurie, JC Plana, R Graffeuil, J
Citation: B. Guillon et al., Ka band micromachined dielectric resonator oscillator, ELECTR LETT, 35(11), 1999, pp. 909-910
Risultati: 1-13 |