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Results: 51-75/89
Authors:
Damilano, B
Grandjean, N
Massies, J
Dalmasso, S
Reverchon, JL
Calligaro, M
Duboz, JY
Siozade, L
Leymarie, J
Citation: B. Damilano et al., Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy, PHYS ST S-A, 180(1), 2000, pp. 363-368
Authors:
Morel, A
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Damilano, B
Grandjean, N
Massies, J
Citation: A. Morel et al., Time-resolved spectroscopy of MBE-grown InGaN/GaN self-formed quantum dots, PHYS ST S-A, 180(1), 2000, pp. 375-380
Authors:
Gallart, M
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown nitride based heterostructures, PHYS ST S-A, 178(1), 2000, pp. 101-105
Authors:
Grandjean, N
Damilano, B
Massies, J
Neu, G
Teissere, M
Grzegory, I
Porowski, S
Gallart, M
Lefebvre, P
Gil, B
Albrecht, M
Citation: N. Grandjean et al., Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate, J APPL PHYS, 88(1), 2000, pp. 183-187
Authors:
Damilano, B
Grandjean, N
Massies, J
Siozade, L
Leymarie, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blueto red at 300 K, APPL PHYS L, 77(9), 2000, pp. 1268-1270
Authors:
Frayssinet, E
Knap, W
Lorenzini, P
Grandjean, N
Massies, J
Skierbiszewski, C
Suski, T
Grzegory, I
Porowski, S
Simin, G
Hu, X
Khan, MA
Shur, MS
Gaska, R
Maude, D
Citation: E. Frayssinet et al., High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates, APPL PHYS L, 77(16), 2000, pp. 2551-2553
Authors:
Gleize, J
Frandon, J
Demangeot, F
Renucci, MA
Adelmann, C
Daudin, B
Feuillet, G
Damilano, B
Grandjean, N
Massies, J
Citation: J. Gleize et al., Signature of GaN-AlN quantum dots by nonresonant Raman scattering, APPL PHYS L, 77(14), 2000, pp. 2174-2176
Authors:
Grandjean, N
Leroux, M
Massies, J
Mesrine, M
Laugt, M
Citation: N. Grandjean et al., Molecular beam epitaxy of GaN under N-rich conditions using NH3, JPN J A P 1, 38(2A), 1999, pp. 618-621
Authors:
Damilano, B
Vezian, S
Grandjean, N
Massies, J
Citation: B. Damilano et al., Strong carrier localization in GaInN/GaN quantum dots grown by molecular beam epitaxy, JPN J A P 2, 38(12A), 1999, pp. L1357-L1359
Authors:
Grandjean, N
Massies, J
Citation: N. Grandjean et J. Massies, Molecular beam epitaxy growth of nitride materials, MAT SCI E B, 59(1-3), 1999, pp. 39-46
Authors:
Nelson, DK
Jacobson, MA
Kagan, VD
Shmidt, M
Gil, B
Grandjean, N
Massies, J
Citation: Dk. Nelson et al., Impact ionization of excitons in an electric field in GaN, PHYS ST S-B, 216(1), 1999, pp. 63-67
Authors:
Siozade, L
Colard, S
Mihailovic, M
Leymarie, J
Vasson, A
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Temperature dependence of hexagonal-GaN optical properties below the bandgap, PHYS ST S-B, 216(1), 1999, pp. 73-77
Authors:
Semond, F
Damilano, B
Vezian, S
Grandjean, N
Leroux, M
Massies, J
Citation: F. Semond et al., GaN on Si(111): From growth optimization to optical properties of quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 101-105
Authors:
Ochalski, TJ
Gil, B
Bretagnon, T
Lefebvre, P
Grandjean, N
Massies, J
Leroux, M
Citation: Tj. Ochalski et al., Photoreflectance spectroscopy investigation of GaN-AlGaN quantum well structures, PHYS ST S-B, 216(1), 1999, pp. 221-225
Authors:
Lefebvre, P
Gallart, M
Taliercio, T
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: P. Lefebvre et al., Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths, PHYS ST S-B, 216(1), 1999, pp. 361-364
Authors:
Damilano, B
Grandjean, N
Semond, F
Massies, J
Leroux, M
Citation: B. Damilano et al., Violet to orange room temperature luminescence from GaN quantum dots on Si(111) substrates, PHYS ST S-B, 216(1), 1999, pp. 451-455
Authors:
Leroux, M
Grandjean, N
Beaumont, B
Nataf, G
Semond, F
Massies, J
Gibart, P
Citation: M. Leroux et al., Temperature dependence of photoluminescence intensities of undoped and doped GaN, PHYS ST S-B, 216(1), 1999, pp. 605-608
Authors:
Demangeot, F
Gleize, J
Frandon, J
Renucci, MA
Kuball, M
Grandjean, N
Massies, J
Citation: F. Demangeot et al., Multi phonon resonant Raman scattering in GaN/AlxGa1-xN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 799-802
Authors:
Leroux, M
Grandjean, N
Massies, J
Gil, B
Lefebvre, P
Bigenwald, P
Citation: M. Leroux et al., Barrier-width dependence of group-III nitrides quantum-well transition energies, PHYS REV B, 60(3), 1999, pp. 1496-1499
Authors:
Lefebvre, P
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Citation: P. Lefebvre et al., Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells, PHYS REV B, 59(23), 1999, pp. 15363-15367
Authors:
Gil, B
Lefebvre, P
Allegre, J
Mathieu, H
Grandjean, N
Leroux, M
Massies, J
Bigenwald, P
Christol, P
Citation: B. Gil et al., Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells, PHYS REV B, 59(15), 1999, pp. 10246-10250
Authors:
Ochalski, TJ
Gil, B
Lefebvre, P
Grandjean, N
Massies, J
Leroux, M
Citation: Tj. Ochalski et al., Photoreflectance spectroscopy as a powerful tool for the investigation of GaN-AlGaN quantum well structures, SOL ST COMM, 109(9), 1999, pp. 567-571
Authors:
Grandjean, N
Damilano, B
Dalmasso, S
Leroux, M
Laugt, M
Massies, J
Citation: N. Grandjean et al., Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells, PHYS ST S-A, 176(1), 1999, pp. 219-225
Authors:
Karpov, SY
Talalaev, RA
Makarov, YN
Grandjean, N
Massies, J
Damilano, B
Citation: Sy. Karpov et al., Growth kinetics of GaN in ammonia atmosphere, PHYS ST S-A, 176(1), 1999, pp. 333-336
Authors:
Grandjean, N
Massies, J
Citation: N. Grandjean et J. Massies, GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3, J CRYST GR, 202, 1999, pp. 323-326