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Results: 1-15 |
Results: 15
Numerical simulation of intrinsic defects in SiO2 and Si3N4
Authors: Gritsenko, VA Novikov, YN Shaposhnikov, AV Morokov, YN
Citation: Va. Gritsenko et al., Numerical simulation of intrinsic defects in SiO2 and Si3N4, SEMICONDUCT, 35(9), 2001, pp. 997-1005
EPR-study of nitrogen implanted silicon nitride
Authors: Shames, AI Gritsenko, VA Samoilova, RI Tzvetkov, YD Braginsky, LS Roger, M
Citation: Ai. Shames et al., EPR-study of nitrogen implanted silicon nitride, SOL ST COMM, 118(3), 2001, pp. 129-134
Relationship between the cell size and antilysozyme activity in Escherichia coli batch cultures
Authors: Gritsenko, VA
Citation: Va. Gritsenko, Relationship between the cell size and antilysozyme activity in Escherichia coli batch cultures, MICROBIOLOG, 70(3), 2001, pp. 365-367
Oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy
Authors: Klauser, R Hong, IH Su, HJ Chen, TT Gwo, S Wang, SC Chuang, TJ Gritsenko, VA
Citation: R. Klauser et al., Oxidation states in scanning-probe-induced Si3N4 to SiOx conversion studied by scanning photoemission microscopy, APPL PHYS L, 79(19), 2001, pp. 3143-3145
Short-range order and luminescence in amorphous silicon oxynitride
Authors: Gritsenko, VA Shavalgin, YG Pundur, PA Wong, H Kwok, WM
Citation: Va. Gritsenko et al., Short-range order and luminescence in amorphous silicon oxynitride, PHIL MAG B, 80(10), 2000, pp. 1857-1868
Growth-phase associated changes in the reproductive capacity, intracellular polyamines, and antilysozyme activity in Escherichia coli batch culture
Authors: Bukharin, OV Gritsenko, VA Tkachenko, AG Salakhetdinova, OY
Citation: Ov. Bukharin et al., Growth-phase associated changes in the reproductive capacity, intracellular polyamines, and antilysozyme activity in Escherichia coli batch culture, MICROBIOLOG, 69(1), 2000, pp. 113-115
The arithmetic mirror symmetry and Calabi-Yau manifolds
Authors: Gritsenko, VA Nikulin, VV
Citation: Va. Gritsenko et Vv. Nikulin, The arithmetic mirror symmetry and Calabi-Yau manifolds, COMM MATH P, 210(1), 2000, pp. 1-11
Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric
Authors: Morokov, YN Novikov, YN Gritsenko, VA Wong, H
Citation: Yn. Morokov et al., Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric, MICROEL ENG, 48(1-4), 1999, pp. 175-178
Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance
Authors: Gritsenko, VA Zhuravlev, KS Milov, AD Wong, H Kwok, RWM Xu, JB
Citation: Va. Gritsenko et al., Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance, THIN SOL FI, 353(1-2), 1999, pp. 20-24
About the role of the near-bottom currents in the formation of the bottom sediments in the Gotland Basin, Baltic Sea
Authors: Emelyanov, EM Gritsenko, VA
Citation: Em. Emelyanov et Va. Gritsenko, About the role of the near-bottom currents in the formation of the bottom sediments in the Gotland Basin, Baltic Sea, OKEANOLOGIY, 39(5), 1999, pp. 776-786
About basic phases of isolation of bottom gravity currents from the slopping bottom
Authors: Gritsenko, VA Yurova, AA
Citation: Va. Gritsenko et Aa. Yurova, About basic phases of isolation of bottom gravity currents from the slopping bottom, OKEANOLOGIY, 39(2), 1999, pp. 187-191
Cathodoluminescence and photoluminescence of amorphous silicon oxynitride
Authors: Gritsenko, VA Shavalgin, YG Pundur, PA Wong, H Lau, WM
Citation: Va. Gritsenko et al., Cathodoluminescence and photoluminescence of amorphous silicon oxynitride, MICROEL REL, 39(5), 1999, pp. 715-718
Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures
Authors: Gritsenko, VA Wong, H Xu, JB Kwok, RM Petrenko, IP Zaitsev, BA Morokov, YN Novikov, YN
Citation: Va. Gritsenko et al., Excess silicon at the silicon nitride/thermal oxide interface in oxide-nitride-oxide structures, J APPL PHYS, 86(6), 1999, pp. 3234-3240
Study of excess silicon at Si3N4 thermal SiO2 interface using ellipsometric measurements
Authors: Gritsenko, VA Svitasheva, SN Petrenko, IP Wong, H Xu, JB Wilson, IH
Citation: Va. Gritsenko et al., Study of excess silicon at Si3N4 thermal SiO2 interface using ellipsometric measurements, J ELCHEM SO, 146(2), 1999, pp. 780-785
Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing
Authors: Volodin, VA Efremov, MD Gritsenko, VA Kochubei, SA
Citation: Va. Volodin et al., Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing, APPL PHYS L, 73(9), 1998, pp. 1212-1214
Risultati: 1-15 |