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Results: 1-12 |
Results: 12
Ion beam studies of silicon oxidation and oxynitridation
Authors: Schulte, WH Gustafsson, T Garfunkel, E Baumvol, IJR Gusev, EP
Citation: Wh. Schulte et al., Ion beam studies of silicon oxidation and oxynitridation, SPR S MAT S, 46, 2001, pp. 161-191
Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues
Authors: Gusev, EP Cartier, E Buchanan, DA Gribelyuk, M Copel, M Okorn-Schmidt, H D'Emic, C
Citation: Ep. Gusev et al., Ultrathin high-K metal oxides on silicon: processing, characterization andintegration issues, MICROEL ENG, 59(1-4), 2001, pp. 341-349
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
Authors: Green, ML Gusev, EP Degraeve, R Garfunkel, EL
Citation: Ml. Green et al., Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits, J APPL PHYS, 90(5), 2001, pp. 2057-2121
Robustness of ultrathin aluminum oxide dielectrics on Si(001) (vol 78, pg 2670, 2001)
Authors: Copel, M Cartier, E Gusev, EP Guha, S Bojarczuk, N Poppeller, M
Citation: M. Copel et al., Robustness of ultrathin aluminum oxide dielectrics on Si(001) (vol 78, pg 2670, 2001), APPL PHYS L, 78(26), 2001, pp. 4199-4199
Robustness of ultrathin aluminum oxide dielectrics on Si(001)
Authors: Copel, M Cartier, E Gusev, EP Guha, S Bojarczuk, N Poppeller, M
Citation: M. Copel et al., Robustness of ultrathin aluminum oxide dielectrics on Si(001), APPL PHYS L, 78(18), 2001, pp. 2670-2672
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
Authors: Lu, HC Gusev, EP Garfunkel, E Busch, BW Gustafsson, T Sorsch, TW Green, ML
Citation: Hc. Lu et al., Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon, J APPL PHYS, 87(3), 2000, pp. 1550-1555
High-resolution depth profiling in ultrathin Al2O3 films on Si
Authors: Gusev, EP Copel, M Cartier, E Baumvol, IJR Krug, C Gribelyuk, MA
Citation: Ep. Gusev et al., High-resolution depth profiling in ultrathin Al2O3 films on Si, APPL PHYS L, 76(2), 2000, pp. 176-178
Vacancy mechanism of the anomalous behavior of surface atoms at elevated temperatures
Authors: Devyatko, YN Rogozhkin, SV Troyan, VI Gusev, EP Gustafsson, T
Citation: Yn. Devyatko et al., Vacancy mechanism of the anomalous behavior of surface atoms at elevated temperatures, J EXP TH PH, 89(6), 1999, pp. 1103-1106
Silicon oxide decomposition and desorption during the thermal oxidation ofsilicon
Authors: Starodub, D Gusev, EP Garfunkel, E Gustafsson, T
Citation: D. Starodub et al., Silicon oxide decomposition and desorption during the thermal oxidation ofsilicon, SURF REV L, 6(1), 1999, pp. 45-52
Ultrathin nitrided gate dielectrics by plasma-assisted processing
Authors: Gusev, EP Buchanan, DA Jamison, P Zabel, TH Copel, M
Citation: Ep. Gusev et al., Ultrathin nitrided gate dielectrics by plasma-assisted processing, MICROEL ENG, 48(1-4), 1999, pp. 67-70
Growth and characterization of ultrathin nitrided silicon oxide films
Authors: Gusev, EP Lu, HC Garfunkel, EL Gustafsson, T Green, ML
Citation: Ep. Gusev et al., Growth and characterization of ultrathin nitrided silicon oxide films, IBM J RES, 43(3), 1999, pp. 265-286
Nitrous oxide gas phase chemistry during silicon oxynitride film growth
Authors: Gupta, A Toby, S Gusev, EP Lu, HC Li, Y Green, ML Gustafsson, T Garfunkel, E
Citation: A. Gupta et al., Nitrous oxide gas phase chemistry during silicon oxynitride film growth, PROG SURF S, 59(1-4), 1998, pp. 103-115
Risultati: 1-12 |