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Results: 1-22 |
Results: 22
Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method
Authors: Andreev, BA Krasil'nik, ZF Kuznetsov, VP Soldatkin, AO Bresler, MS Gusev, OB Yassievich, IN
Citation: Ba. Andreev et al., Peculiarities of photoluminescence of erbium in silicon structures prepared by the sublimation molecular-beam epitaxy method, PHYS SOL ST, 43(6), 2001, pp. 1012-1017
Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Yassievich, IN
Citation: Ms. Bresler et al., Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, PHYS SOL ST, 43(4), 2001, pp. 625-628
Stimulated emission in erbium-doped silicon structures under optical pumping
Authors: Bresler, MS Gusev, OB Terukov, EI Yassievich, IN Zakharchenya, BP Emel'yanov, VI Kamenev, BV Kashkarov, PK Konstantinova, EA Timoshenko, VY
Citation: Ms. Bresler et al., Stimulated emission in erbium-doped silicon structures under optical pumping, MAT SCI E B, 81(1-3), 2001, pp. 52-55
Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures
Authors: Yassievich, IN Bresler, MS Gusev, OB Pak, PE Tsendin, KD Terukov, EI
Citation: In. Yassievich et al., Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, MAT SCI E B, 81(1-3), 2001, pp. 182-184
Stimulated emission in erbiumdoped silicon structures at optical pumping
Authors: Bresler, MS Gusev, OB Emel'yanov, VI Zakharchenya, BP Kamenev, BV Kashkarov, PK Konstantinova, EA Timoshenko, VY Terukov, EI Yassievich, IN
Citation: Ms. Bresler et al., Stimulated emission in erbiumdoped silicon structures at optical pumping, IAN FIZ, 65(2), 2001, pp. 268-270
Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method
Authors: Andreev, BA Bresler, MS Gusev, OB Krasil'nik, ZF Kuznetsov, VP Soldatkin, AO Yassievich, IN
Citation: Ba. Andreev et al., Features of photoluminescence of uniformly and selectively erbium doped silicon structures produced by the sublimation MBE method, IAN FIZ, 65(2), 2001, pp. 271-275
Excitation cross section of erbium in semiconductor matrices under opticalpumping - art. no. 075302
Authors: Gusev, OB Bresler, MS Pak, PE Yassievich, IN Forcales, M Vinh, NQ Gregorkiewicz, T
Citation: Ob. Gusev et al., Excitation cross section of erbium in semiconductor matrices under opticalpumping - art. no. 075302, PHYS REV B, 6407(7), 2001, pp. 5302
Superluminescence of Er3+ in an amorphous silicon matrix
Authors: Emel'yanov, VI Kamenev, BV Kashkarov, PK Konstantinova, EI Timoshenko, VY Terukov, EI Bresler, MS Gusev, OB
Citation: Vi. Emel'Yanov et al., Superluminescence of Er3+ in an amorphous silicon matrix, PHYS SOL ST, 42(8), 2000, pp. 1410-1413
Resonant excitation of erbium ions in crystalline-silicon-based electroluminescent structures
Authors: Bresler, MS Gusev, OB Pak, PE Yassievich, IN
Citation: Ms. Bresler et al., Resonant excitation of erbium ions in crystalline-silicon-based electroluminescent structures, IAN FIZ, 64(2), 2000, pp. 264-268
Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon
Authors: Bresler, MS Gusev, OB Sobolev, NA Terukov, EI Yassievich, IN Zakharchenya, BP Gregorkevich, T
Citation: Ms. Bresler et al., Mechanisms of excitation and thermal quenching of erbium-ion luminescence in crystalline and amorphous silicon, PHYS SOL ST, 41(5), 1999, pp. 770-773
Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures
Authors: Gusev, OB Ber, BY Bresler, MS Zakharchenya, BP Yassievich, IN Khitrova, G Gibbs, HM Prineas, DP Lindmark, EK Masterov, VF
Citation: Ob. Gusev et al., Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures, PHYS SOL ST, 41(3), 1999, pp. 484-488
Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization
Authors: Gusev, OB Bresler, MS Zakharchenya, BP Kuznetsov, AN Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization, PHYS SOL ST, 41(2), 1999, pp. 185-191
Mechanism of erbium electroluminescence in hydrogenated amorphous silicon
Authors: Bresler, MS Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of erbium electroluminescence in hydrogenated amorphous silicon, SEMICONDUCT, 33(6), 1999, pp. 622-623
Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge
Authors: Terukov, EI Kon'kov, OI Kudoyarova, VK Gusev, OB Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge, SEMICONDUCT, 33(2), 1999, pp. 177-179
Effective Auger excitation of erbium luminescence by hot electrons in silicon
Authors: Bresler, MS Gregorkiewicz, T Gusev, OB Pak, PE Yassievich, IN
Citation: Ms. Bresler et al., Effective Auger excitation of erbium luminescence by hot electrons in silicon, PHYSICA B, 274, 1999, pp. 334-337
Mechanism of excitation of erbium electroluminescence in amorphous silicon
Authors: Bresler, MS Fuhs, W Gregorkiewicz, T Gusev, OB Pak, PE Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ms. Bresler et al., Mechanism of excitation of erbium electroluminescence in amorphous silicon, PHYSICA B, 274, 1999, pp. 354-357
Mechanisms of excitation of erbium ions in crystalline silicon
Authors: Gusev, OB Bresler, MS Zakharchenya, BP Pak, PE Yassievich, IN
Citation: Ob. Gusev et al., Mechanisms of excitation of erbium ions in crystalline silicon, IAN FIZ, 63(2), 1999, pp. 379-387
Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures
Authors: Bresler, MS Gusev, OB Pak, PE Yassievich, IN
Citation: Ms. Bresler et al., Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures, APPL PHYS L, 75(17), 1999, pp. 2617-2619
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films
Authors: Kudoyarova, VK Kuznetsov, AN Terukov, EI Gusev, OB Kudryavtsev, YA Ber, BY Gusinskii, GM Fuhs, W Weiser, G Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon
Authors: Gusev, OB Bresler, MS Terukov, EI Tsendin, KD Yassievich, IN
Citation: Ob. Gusev et al., Room-temperature electroluminescence from erbium-doped amorphous hydrogenated silicon, J LUMINESC, 80(1-4), 1998, pp. 335-338
Dislocation-related luminescence in Er-implanted silicon
Authors: Sobolev, NA Gusev, OB Shek, EI Vdovin, VI Yugova, TG Emel'yanov, AM
Citation: Na. Sobolev et al., Dislocation-related luminescence in Er-implanted silicon, J LUMINESC, 80(1-4), 1998, pp. 357-361
New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon
Authors: Bresler, MS Gusev, OB Pak, PE Sobolev, NA Yassievich, IN
Citation: Ms. Bresler et al., New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon, J LUMINESC, 80(1-4), 1998, pp. 375-379
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