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Results:
1-16
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Results: 16
Authors:
HAN LK
NINOMIYA H
TANIGUCHI I
BABA K
KIMURA Y
OKUDA H
Citation: Lk. Han et al., NOREPINEPHRINE-AUGMENTING LIPOLYTIC EFFECTORS FROM ASTILBE THUNBERGIIRHIZOMES, Journal of natural products, 61(8), 1998, pp. 1006-1011
Authors:
JIANG M
KAMEDA K
HAN LK
KIMURA Y
OKUDA H
Citation: M. Jiang et al., ISOLATION OF LIPOLYTIC SUBSTANCES CAFFEINE AND 1,7-DIMETHYLXANTHINE FROM THE STEM AND RHIZOME OF SINOMENIUM-ACTUM, Planta medica, 64(4), 1998, pp. 375-377
Authors:
ARONSON S
HAN LK
Citation: S. Aronson et Lk. Han, STRESS ECHOCARDIOGRAPHY, CONTRAST ECHOCARDIOGRAPHY, AND TISSUE CHARACTERIZATION APPLICATIONS FOR THE FUTURE, Critical care clinics, 12(2), 1996, pp. 429
Authors:
YAN J
HAN LK
KWONG DL
Citation: J. Yan et al., HIGHLY RELIABLE CHEMICAL-VAPOR-DEPOSITED STACKED OXYNITRIDE GATE DIELECTRICS FABRICATED BY IN-SITU RAPID THERMAL MULTIPROCESSING, Applied physics letters, 68(19), 1996, pp. 2666-2668
Authors:
WRISTERS D
HAN LK
CHEN T
WANG HH
KWONG DL
ALLEN M
FULFORD J
Citation: D. Wristers et al., DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION, Applied physics letters, 68(15), 1996, pp. 2094-2096
Authors:
HAN LK
YOON GW
KIM J
YAN J
KWONG DL
Citation: Lk. Han et al., FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING, IEEE electron device letters, 16(8), 1995, pp. 348-350
Authors:
HAN LK
WRISTERS D
YAN J
BHAT M
KWONG DL
Citation: Lk. Han et al., HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(-POLYSILICON GATED MOS DEVICE APPLICATIONS()), IEEE electron device letters, 16(7), 1995, pp. 319-321
Authors:
HAN LK
BHAT M
WRISTERS D
WANG HH
KWONG DL
Citation: Lk. Han et al., RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 89-96
Authors:
BHAT M
WRISTERS DJ
HAN LK
YAN J
FULFORD HJ
KWONG DL
Citation: M. Bhat et al., ELECTRICAL-PROPERTIES AND RELIABILITY OF MOSFETS WITH RAPID THERMAL NO-NITRIDED SIO2 GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 907-914
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT
Authors:
HAN LK
KIM J
YOON GW
YAN J
KWONG DL
Citation: Lk. Han et al., HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT, Electronics Letters, 31(14), 1995, pp. 1196-1198
Authors:
HAN LK
WANG HH
YAN J
KWONG DL
Citation: Lk. Han et al., STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2, Electronics Letters, 31(14), 1995, pp. 1202-1204
Authors:
BHAT M
HAN LK
WRISTERS D
YAN J
KWONG DL
FULFORD J
Citation: M. Bhat et al., EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2, Applied physics letters, 66(10), 1995, pp. 1225-1227
Authors:
YOON GW
LO GQ
KIM J
HAN LK
KWONG DL
Citation: Gw. Yoon et al., FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT, IEEE electron device letters, 15(8), 1994, pp. 266-268
Authors:
HAN LK
YOON GW
KWONG DL
MATHEWS VK
FAZAN PC
Citation: Lk. Han et al., EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS, IEEE electron device letters, 15(8), 1994, pp. 280-282
Authors:
BHAT M
KIM J
YAN J
YOON GW
HAN LK
KWONG DL
Citation: M. Bhat et al., MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES, IEEE electron device letters, 15(10), 1994, pp. 421-423
Authors:
HENRY ML
HAN LK
DAVIES EA
SEDMAK DD
FERGUSON RM
Citation: Ml. Henry et al., ANTIBODY DEPLETION PROLONGS XENOGRAFT SURVIVAL, Surgery, 115(3), 1994, pp. 355-361
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