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Results:
1-17
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Results: 17
Authors:
ZHOU TC
JIANG S
KIRK WP
HAO PH
WANG LC
CHEN PJ
Citation: Tc. Zhou et al., INVESTIGATION OF SOLID-PHASE REACTION OF NI WITH GAAS SI(001)/, Applied physics letters, 73(1), 1998, pp. 55-57
Authors:
PARK MH
HAO PH
WANG LC
Citation: Mh. Park et al., ANOMALOUS LATERAL ZN SURFACE-DIFFUSION IN INP CAUSED BY ZN-CONTAINED METALLIZATION, Journal of electronic materials, 26(1), 1997, pp. 25-29
Authors:
HAO PH
WANG LC
RESSEL P
KUO JM
Citation: Ph. Hao et al., LOW-RESISTANCE (SIMILAR-TO-1X10(-6)OMEGA-CM(2)) AU GE/PD OHMIC CONTACT TO N-AL0.5IN0.5P/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3244-3247
Authors:
HAO PH
WANG LC
DENG F
LAU SS
CHENG JY
Citation: Ph. Hao et al., ON THE LOW-RESISTANCE AU GE/PD OHMIC CONTACT TO N-GAAS/, Journal of applied physics, 79(8), 1996, pp. 4211-4215
Authors:
WANG LC
HAO PH
CHENG JY
DENG F
LAU SS
Citation: Lc. Wang et al., OHMIC CONTACT FORMATION MECHANISM OF THE AU GE/PD/N-GAAS SYSTEM FORMED BELOW 200-DEGREES-C/, Journal of applied physics, 79(8), 1996, pp. 4216-4220
Authors:
HAO PH
WANG LC
CHANG JCP
KUO HC
KUO JM
Citation: Ph. Hao et al., SHALLOW SI PD-BASED OHMIC CONTACTS TO N-AL0.5IN0.5P/, Journal of applied physics, 79(7), 1996, pp. 3640-3644
Authors:
YANG ZC
HAO PH
WANG LC
Citation: Zc. Yang et al., AU IN PD TE PD OHMIC CONTACT TO N-GASB, Electronics Letters, 32(25), 1996, pp. 2348-2349
Authors:
HAO PH
WANG LC
WU BJ
Citation: Ph. Hao et al., LOW-RESISTANCE (APPROXIMATE-TO-10(-6) OMEGA-CM(2)) OHMIC CONTACT TO N-GAAS PROCESSED AT 175-DEGREES-C, Electronics Letters, 31(13), 1995, pp. 1106-1108
Authors:
WANG LC
HAO PH
WU BJ
Citation: Lc. Wang et al., LOW-TEMPERATURE-PROCESSED (150-175-DEGREES-C) GE PD-BASED OHMIC CONTACTS(RHO(C)SIMILAR-TO-1X10(-6)OMEGA-CM(2)) TO N-GAAS/, Applied physics letters, 67(4), 1995, pp. 509-511
Authors:
CHEN LY
HOU XY
HUANG DM
HAO PH
ZHANG FL
FENG XW
QIAN YH
WANG X
Citation: Ly. Chen et al., OPTICAL STUDY OF PHOTON-TRAPPED POROUS SILICON LAYER, JPN J A P 1, 33(4A), 1994, pp. 1937-1943
Authors:
WANG X
HAO PH
HUANG DM
ZHANG FL
YANG M
YU MR
Citation: X. Wang et al., ORIGIN OF MULTIPLE-PEAK PHOTOLUMINESCENCE SPECTRA OF LIGHT-EMITTING POROUS SILICON, Physical review. B, Condensed matter, 50(16), 1994, pp. 12230-12233
Authors:
YANG M
HUANG DM
HAO PH
ZHANG FL
HOU XY
WANG X
Citation: M. Yang et al., STUDY OF THE RAMAN PEAK SHIFT AND THE LINEWIDTH OF LIGHT-EMITTING POROUS SILICON, Journal of applied physics, 75(1), 1994, pp. 651-653
Authors:
HAO PH
HOU XY
ZHANG FL
WANG X
Citation: Ph. Hao et al., ENERGY-BAND LINEUP AT THE POROUS-SILICON SILICON HETEROINTERFACE MEASURED BY ELECTRON-SPECTROSCOPY, Applied physics letters, 64(26), 1994, pp. 3602-3604
Authors:
ZHANG FL
HAO PH
SHI G
HOU XY
HUANG DM
WANG X
Citation: Fl. Zhang et al., IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON, Semiconductor science and technology, 8(11), 1993, pp. 2015-2017
Authors:
WANG J
JIANG HB
WANG WC
ZHENG JB
ZHANG FL
HAO PH
HOU XY
WANG X
Citation: J. Wang et al., ANISOTROPY OF INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON, Physical review. B, Condensed matter, 48(8), 1993, pp. 5653-5656
Authors:
WANG X
HUANG DM
YE L
YANG M
HAO PH
FU HX
HOU XY
XIE XD
Citation: X. Wang et al., PINNING OF PHOTOLUMINESCENCE PEAK POSITIONS FOR LIGHT-EMITTING POROUSSILICON - AN EVIDENCE OF QUANTUM-SIZE EFFECT, Physical review letters, 71(8), 1993, pp. 1265-1267
Authors:
WANG X
SHI G
ZHANG FL
CHEN HJ
WANG W
HAO PH
HOU XY
Citation: X. Wang et al., CRITICAL CONDITIONS FOR ACHIEVING BLUE-LIGHT EMISSION FROM POROUS SILICON, Applied physics letters, 63(17), 1993, pp. 2363-2365
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1-17
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