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Results: 1-19 |
Results: 19
DEVICE DESIGN AND CIRCUIT MODELING ISSUES IN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: CRESSLER JD JOSEPH AJ SALMON SL HARAME DL
Citation: Jd. Cressler et al., DEVICE DESIGN AND CIRCUIT MODELING ISSUES IN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1516-1519
COLLECTOR-BASE JUNCTION AVALANCHE MULTIPLICATION EFFECTS IN ADVANCED UHV CVD SIGE HBTS/
Authors: NIU GF CRESSLER JD GOGINENI U HARAME DL
Citation: Gf. Niu et al., COLLECTOR-BASE JUNCTION AVALANCHE MULTIPLICATION EFFECTS IN ADVANCED UHV CVD SIGE HBTS/, IEEE electron device letters, 19(8), 1998, pp. 288-290
A SCALEABLE, STATISTICAL SPICE GUMMEL-POON MODEL FOR SIGE HBTS
Authors: WALTER KM EBERSMAN B SUNDERLAND DA BERG GD FREEMAN GG GROVES RA JADUS DK HARAME DL
Citation: Km. Walter et al., A SCALEABLE, STATISTICAL SPICE GUMMEL-POON MODEL FOR SIGE HBTS, IEEE journal of solid-state circuits, 33(9), 1998, pp. 1439-1444
MANUFACTURABILITY AND APPLICATIONS OF SIGE HBT TECHNOLOGY
Authors: SUNDERLAND DA AHLGREN DC GILBERT MM JENG SJ MALINOWSKI JC NGUYENNGOC D SCHONENBERG KT STEIN KJ MEYERSON BS HARAME DL
Citation: Da. Sunderland et al., MANUFACTURABILITY AND APPLICATIONS OF SIGE HBT TECHNOLOGY, Solid-state electronics, 41(10), 1997, pp. 1503-1507
NEUTRAL BASE RECOMBINATION AND ITS INFLUENCE ON THE TEMPERATURE-DEPENDENCE OF EARLY VOLTAGE AND CURRENT GAIN EARLY VOLTAGE PRODUCT IN UHV CVD SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: JOSEPH AJ CRESSLER JD RICHEY DM JAEGER RC HARAME DL
Citation: Aj. Joseph et al., NEUTRAL BASE RECOMBINATION AND ITS INFLUENCE ON THE TEMPERATURE-DEPENDENCE OF EARLY VOLTAGE AND CURRENT GAIN EARLY VOLTAGE PRODUCT IN UHV CVD SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(3), 1997, pp. 404-413
A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN
Authors: VOINIGESCU SP MALIEPAARD MC SHOWELL JL BABCOCK GE MARCHESAN D SCHROTER M SCHVAN P HARAME DL
Citation: Sp. Voinigescu et al., A SCALABLE HIGH-FREQUENCY NOISE MODEL FOR BIPOLAR-TRANSISTORS WITH APPLICATION TO OPTIMAL TRANSISTOR SIZING FOR LOW-NOISE AMPLIFIER DESIGN, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1430-1439
INTEGRATED RF COMPONENTS IN A SIGE BIPOLAR TECHNOLOGY
Authors: BURGHARTZ JN SOYUER M JENKINS KA KIES M DOLAN M STEIN KJ MALINOWSKI J HARAME DL
Citation: Jn. Burghartz et al., INTEGRATED RF COMPONENTS IN A SIGE BIPOLAR TECHNOLOGY, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1440-1445
AN 11-GHZ 3-V SIGE VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR
Authors: SOYUER M BURGHARTZ JN AINSPAN HA JENKINS KA XIAO P SHAHANI AR DOLAN MS HARAME DL
Citation: M. Soyuer et al., AN 11-GHZ 3-V SIGE VOLTAGE-CONTROLLED OSCILLATOR WITH INTEGRATED RESONATOR, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1451-1454
TEMPERATURE-DEPENDENCE OF Q AND INDUCTANCE IN SPIRAL INDUCTORS FABRICATED IN A SILICON-GERMANIUM BICMOS TECHNOLOGY/
Authors: GROVES R HARAME DL JADUS D
Citation: R. Groves et al., TEMPERATURE-DEPENDENCE OF Q AND INDUCTANCE IN SPIRAL INDUCTORS FABRICATED IN A SILICON-GERMANIUM BICMOS TECHNOLOGY/, IEEE journal of solid-state circuits, 32(9), 1997, pp. 1455-1459
LOW-FREQUENCY NOISE CHARACTERISTICS OF UHV CVD EPITAXIAL SI-BASE AND SIGE-BASE BIPOLAR-TRANSISTORS/
Authors: CRESSLER JD VEMPATI L BABCOCK JA JAEGER RC HARAME DL
Citation: Jd. Cressler et al., LOW-FREQUENCY NOISE CHARACTERISTICS OF UHV CVD EPITAXIAL SI-BASE AND SIGE-BASE BIPOLAR-TRANSISTORS/, IEEE electron device letters, 17(1), 1996, pp. 13-15
A MANUFACTURABLE POLYEMITTER GRADED-SIGE HBT TECHNOLOGY FOR WIRELESS AND MIXED-SIGNAL APPLICATIONS
Authors: NGUYENNGOC D SUNDERLAND DA AHLGREN DC JENG SJ GILBERT MM MALINOWSKI JC SCHONENBERG KT STEIN KS MEYERSON BS HARAME DL
Citation: D. Nguyenngoc et al., A MANUFACTURABLE POLYEMITTER GRADED-SIGE HBT TECHNOLOGY FOR WIRELESS AND MIXED-SIGNAL APPLICATIONS, Applied surface science, 102, 1996, pp. 194-201
LOW-FREQUENCY NOISE IN UHV CVD EPITAXIAL SI AND SIGE BIPOLAR-TRANSISTORS/
Authors: VEMPATI LS CRESSLER JD BABCOCK JA JAEGER RC HARAME DL
Citation: Ls. Vempati et al., LOW-FREQUENCY NOISE IN UHV CVD EPITAXIAL SI AND SIGE BIPOLAR-TRANSISTORS/, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1458-1467
IONIZING-RADIATION TOLERANCE AND LOW-FREQUENCY NOISE DEGRADATION IN UHV CVD SIGE HBTS/
Authors: BABCOCK JA CRESSLER JD VEMPATI LS CLARK SD JAEGER RC HARAME DL
Citation: Ja. Babcock et al., IONIZING-RADIATION TOLERANCE AND LOW-FREQUENCY NOISE DEGRADATION IN UHV CVD SIGE HBTS/, IEEE electron device letters, 16(8), 1995, pp. 351-353
IONIZING-RADIATION TOLERANCE OF HIGH-PERFORMANCE SIGE HBTS GROWN BY UHV CVD/
Authors: BABCOCK JA CRESSLER JD VEMPATI LS CLARK SD JAEGER RC HARAME DL
Citation: Ja. Babcock et al., IONIZING-RADIATION TOLERANCE OF HIGH-PERFORMANCE SIGE HBTS GROWN BY UHV CVD/, IEEE transactions on nuclear science, 42(6), 1995, pp. 1558-1566
SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468
SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/
Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482
UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/
Authors: MEYERSOIN BS SMAIL KE HARAME DL LEGOUES FK STORK JMC
Citation: Bs. Meyersoin et al., UHVCVD GROWTH OF SI SIGE HETEROSTRUCTURES AND THEIR APPLICATIONS/, Semiconductor science and technology, 9(11), 1994, pp. 2005-2010
SIGE-CHANNEL HETEROJUNCTION P-MOSFETS
Authors: VERDONCKTVANDEBROEK S CRABBE EF MEYERSON BS HARAME DL RESTLE PJ STORK JMC JOHNSON JB
Citation: S. Verdoncktvandebroek et al., SIGE-CHANNEL HETEROJUNCTION P-MOSFETS, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 90-101
A HIGH-SPEED COMPLEMENTARY SILICON BIPOLAR TECHNOLOGY WITH 12-FJ POWER-DELAY PRODUCT
Authors: CRESSLER JD WARNOCK J HARAME DL BURGHARTZ JN JENKINS KA CHUANG CT
Citation: Jd. Cressler et al., A HIGH-SPEED COMPLEMENTARY SILICON BIPOLAR TECHNOLOGY WITH 12-FJ POWER-DELAY PRODUCT, IEEE electron device letters, 14(11), 1993, pp. 523-526
Risultati: 1-19 |