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Results: 1-25/82
Authors:
BEHNER U
HAUG R
SCHUTZ R
HARTNAGEL HL
Citation: U. Behner et al., CHARACTERIZATION OF ANISOTROPICALLY CONDUCTIVE ADHESIVE INTERCONNECTIONS BY 1 F NOISE MEASUREMENTS/, IEEE transactions on components, packaging, and manufacturing technology. Part A, 21(2), 1998, pp. 243-247
Authors:
DEHE A
KLINGBEIL H
WEIL C
HARTNAGEL HL
Citation: A. Dehe et al., MEMBRANE-SUPPORTED COPLANAR WAVE-GUIDES FOR MMIC AND SENSOR APPLICATION, IEEE microwave and guided wave letters, 8(5), 1998, pp. 185-187
Authors:
DEHE A
PEERLINGS J
PFEIFFER J
RIEMENSCHNEIDER R
VOGT A
STREUBEL K
KUNZEL H
MEISSNER P
HARTNAGEL HL
Citation: A. Dehe et al., III-V COMPOUND SEMICONDUCTOR MICROMACHINED ACTUATORS FOR LONG RESONATOR TUNABLE FABRY-PEROT DETECTORS, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 365-371
Authors:
MIRANDA JM
VOGT A
SCHUSSLER M
SHAALAN M
MATULIONIS A
SEBASTIAN JL
HARTNAGEL HL
Citation: Jm. Miranda et al., MICROWAVE NOISE MEASUREMENTS ON AL0.3GA0.7AS GAAS CHANNELS GROWN BY MOLECULAR-BEAM EPITAXY USING AS-2 AND AS-4/, Semiconductor science and technology, 13(7), 1998, pp. 833-836
Authors:
BERBERICH S
GODIGNON P
LOCATELLI ML
MILLAN J
HARTNAGEL HL
Citation: S. Berberich et al., HIGH-FREQUENCY CV MEASUREMENTS OF SIC MOS CAPACITORS, Solid-state electronics, 42(6), 1998, pp. 915-920
Authors:
RESSEL P
LEECH PW
VEIT P
NEBAUER E
KLEIN A
KUPHAL E
REEVES GK
HARTNAGEL HL
Citation: P. Ressel et al., OHMIC PD ZN/AU/LAB6/AU CONTACTS ON P-TYPE IN0.53GA0.47AS - ELECTRICALAND METALLURGICAL PROPERTIES/, Journal of applied physics, 84(2), 1998, pp. 861-869
OHMIC CONTACT FORMATION MECHANISM OF THE PDGEAU SYSTEM ON N-TYPE GASBGROWN BY MOLECULAR-BEAM EPITAXY
Authors:
VOGT A
SIMON A
HARTNAGEL HL
SCHIKORA J
BUSCHMANN V
RODEWALD M
FUESS H
FASCKO S
KOERDT C
KURZ H
Citation: A. Vogt et al., OHMIC CONTACT FORMATION MECHANISM OF THE PDGEAU SYSTEM ON N-TYPE GASBGROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(12), 1998, pp. 7715-7719
Authors:
BRANDT M
BACHMANN V
VOGT A
FACH M
MAYER K
BREUER B
HARTNAGEL HL
Citation: M. Brandt et al., HIGHLY SENSITIVE ALGAAS GAAS POSITION SENSORS FOR MEASUREMENT OF TYRETREAD DEFORMATION/, Electronics Letters, 34(8), 1998, pp. 760-762
Authors:
GRUZINSKIS V
LIBERIS J
MATULIONIS A
SAKALAS P
STARIKOV E
SHIKTOROV P
SZENTPALI B
VANTUYEN V
HARTNAGEL HL
Citation: V. Gruzinskis et al., COMPETITION OF SHOT-NOISE AND HOT-ELECTRON NOISE IN GAAS PLANAR-DOPEDBARRIER DIODE, Applied physics letters, 73(17), 1998, pp. 2488-2490
Authors:
MUTAMBA K
SIGURDARDOTTIR A
VOGT A
HARTNAGEL HL
LI EH
Citation: K. Mutamba et al., A COMPARATIVE-STUDY OF UNIAXIAL PRESSURE EFFECTS IN INTRABAND ALGAAS GAAS AND INTERBAND INAS/ALSB/GASB RESONANT-TUNNELING DIODES/, Applied physics letters, 72(13), 1998, pp. 1629-1631
Authors:
DASGUPTA A
ARSLAN D
SIGURDARDOTTIR A
HARTNAGEL HL
Citation: A. Dasgupta et al., A NOVEL SELF-CONSISTENT SIMULATOR FOR CURRENT-DENSITY-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR FIELD EMITTERS, Applied physics letters, 72(10), 1998, pp. 1220-1222
Authors:
HENKEL A
DELAGE SL
DIFORTEPOISSON MA
BLANCK H
HARTNAGEL HL
Citation: A. Henkel et al., BORON IMPLANTATION INTO GAAS GA0.5IN0.5P HETEROSTRUCTURES/, JPN J A P 1, 36(1A), 1997, pp. 175-180
Authors:
PEERLINGS J
DEHE A
VOGT A
TILSCH M
HEBELER C
LANGENHAN F
MEISSNER P
HARTNAGEL HL
Citation: J. Peerlings et al., LONG RESONATOR MICROMACHINED TUNABLE GAAS-ALAS FABRY-PEROT FILTER, IEEE photonics technology letters, 9(9), 1997, pp. 1235-1237
Authors:
HARTNAGEL HL
Citation: Hl. Hartnagel, III-V COMPOUNDS FOR HIGH-TEMPERATURE OPERATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 47-51
Authors:
HORN J
PAVLIDIS D
PARK Y
HARTNAGEL HL
Citation: J. Horn et al., SCANNING-TUNNELING-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 414-418
Authors:
TIGINYANU IM
IRMER G
MONECKE J
VOGT A
HARTNAGEL HL
Citation: Im. Tiginyanu et al., POROSITY-INDUCED MODIFICATION OF THE PHONON-SPECTRUM OF N-GAAS, Semiconductor science and technology, 12(4), 1997, pp. 491-493
Authors:
SHAALAN M
BOZZI M
WEINZIERL J
BEILENHOFF K
CONCIAURO G
BRAND H
HARTNAGEL HL
Citation: M. Shaalan et al., A 300 GHZ QUASI-OPTICAL SCHOTTKY FREQUENCY DOUBLER, International journal of infrared and millimeter waves, 18(12), 1997, pp. 2277-2293
Authors:
IIDA T
MAKITA Y
HORN J
HARTNAGEL HL
SHIMA T
KIMURA S
SHIKAMA K
SANPEI H
SANDHU A
KOBAYASHI N
UEKUSA S
Citation: T. Iida et al., RESIDUAL ION DAMAGE IN GAAS-C PREPARED BY COMBINED ION-BEAM AND MOLECULAR-BEAM EPITAXY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 884-887
Authors:
TIGINYANU IM
IRMER G
MONECKE J
HARTNAGEL HL
Citation: Im. Tiginyanu et al., MICRO-RAMAN-SCATTERING STUDY OF SURFACE-RELATED PHONON MODES IN POROUS GAP, Physical review. B, Condensed matter, 55(11), 1997, pp. 6739-6742
Authors:
GOTTWALD P
KRAUTLE H
SZENTPALI B
KINCSES Z
HARTNAGEL HL
Citation: P. Gottwald et al., DAMAGE CHARACTERIZATION OF INP AFTER REACTIVE ION ETCHING USING THE LOW-FREQUENCY NOISE MEASUREMENT TECHNIQUE, Solid-state electronics, 41(4), 1997, pp. 539-545
Authors:
TIGINYANU IM
KRAVETSKY IV
URSAKI VV
MAROWSKY G
HARTNAGEL HL
Citation: Im. Tiginyanu et al., CRYSTAL ORDER RESTORATION AND ZN-IMPURITY ACTIVATION IN INP BY AS-COIMPLANTATION AND ANNEALING(), Physica status solidi. a, Applied research, 162(2), 1997, pp. 9-10
Authors:
HARTNAGEL HL
Citation: Hl. Hartnagel, MICROELECTRONICS BASED ON COMPOUND SEMICONDUCTORS, Microelectronics and reliability, 37(9), 1997, pp. 1397-1400
Authors:
BRANDT M
SCHUBLER M
PARMEGGIANI E
LIN CI
SIMON A
HARTNAGEL HL
Citation: M. Brandt et al., THERMAL SIMULATION AND CHARACTERIZATION OF THE RELIABILITY OF THZ SCHOTTKY DIODES, Microelectronics and reliability, 37(10-11), 1997, pp. 1663-1666
Authors:
VOGT A
BRANDT M
SIGURDARDOTTIR A
SCHUSSLER M
PENA D
SIMON A
HARTNAGEL HL
RODEWALD M
ROESNER M
FUESS H
GOSWAMI SNN
LAL K
Citation: A. Vogt et al., CHARACTERIZATION OF DEGRADATION MECHANISMS IN RESONANT-TUNNELING DIODES, Microelectronics and reliability, 37(10-11), 1997, pp. 1691-1694
Authors:
DEHE A
PAVLIDIS D
HONG KS
HARTNAGEL HL
Citation: A. Dehe et al., INGAAS INP THERMOELECTRIC INFRARED-SENSOR UTILIZING SURFACE-BULK MICROMACHINING TECHNOLOGY/, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1052-1059