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Results: 1-16 |

Results: 16

DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS

Authors: BUIJS M HABERERN KW MARSHALL T GAINES JM LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM

Citation: M. Buijs et al., DEVICE CHARACTERISTICS OF GREEN II-VI SEMICONDUCTOR-LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 49-54

ACTIVATION-ENERGY OF NONRADIATIVE PROCESSES IN DEGRADED II-VI LASER-DIODES

Authors: CHAO LL CARGILL GS KOTHANDARAMAN C MARSHALL T SNOEKS E BUIJS M HABERERN K PETRUZZELLO J HAUGEN GM LAW KK

Citation: Ll. Chao et al., ACTIVATION-ENERGY OF NONRADIATIVE PROCESSES IN DEGRADED II-VI LASER-DIODES, Applied physics letters, 70(5), 1997, pp. 535-537

STARK-EFFECT ON ABSORPTION OF CDZNSSE-ZNSSE QUANTUM-WELLS

Authors: LAW KK SMEKALIN K HAUGEN GM UREN GD HAASE MA

Citation: Kk. Law et al., STARK-EFFECT ON ABSORPTION OF CDZNSSE-ZNSSE QUANTUM-WELLS, IEEE photonics technology letters, 8(2), 1996, pp. 263-265

NONDESTRUCTIVE ANALYSIS OF STRUCTURAL DEFECTS IN WIDE BANDGAP II-VI HETEROSTRUCTURES

Authors: GOORSKY MS LINDO SE GUHA S HAUGEN GM

Citation: Ms. Goorsky et al., NONDESTRUCTIVE ANALYSIS OF STRUCTURAL DEFECTS IN WIDE BANDGAP II-VI HETEROSTRUCTURES, Journal of electronic materials, 25(2), 1996, pp. 235-238

CHARACTERIZATION OF LOW DEFECT DENSITY BLUE-GREEN LASERS

Authors: PETRUZZELLO J HABERERN KW HERKO SP MARSHALL T GAINES JM GUHA S UREN GD HAUGEN GM

Citation: J. Petruzzello et al., CHARACTERIZATION OF LOW DEFECT DENSITY BLUE-GREEN LASERS, Journal of crystal growth, 159(1-4), 1996, pp. 573-581

ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/

Authors: LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM SMEKALIN K

Citation: Kk. Law et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF BLUE-GREEN CDZNSSE ZNSSE QUANTUM-WELL LASER-DIODES/, Electronics Letters, 32(4), 1996, pp. 345-346

DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS

Authors: BUIJS M HABERERN K MARSHALL T LAW KK BAUDE PF MILLER TJ HAASE MA HAUGEN GM HORIKX J

Citation: M. Buijs et al., DEPENDENCE OF LIFETIME OF II-VI SEMICONDUCTOR-LASERS ON OUTPUT POWER FOR DIFFERENT MOUNTING CONFIGURATIONS, Electronics Letters, 32(14), 1996, pp. 1290-1291

GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES

Authors: WU BJ KUO LH DEPUYDT JM HAUGEN GM HAASE MA SALAMANCARIBA L

Citation: Bj. Wu et al., GROWTH AND CHARACTERIZATION OF II-VI BLUE-LIGHT-EMITTING DIODES USINGSHORT-PERIOD SUPERLATTICES, Applied physics letters, 68(3), 1996, pp. 379-381

CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/

Authors: BAUDE PF HAASE MA HAUGEN GM LAW KK MILLER TJ SMEKALIN K PHILLIPS J BHATTACHARYA P

Citation: Pf. Baude et al., CONDUCTION-BAND OFFSETS IN CDZNSSE ZNSSE SINGLE QUANTUM-WELLS MEASURED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Applied physics letters, 68(25), 1996, pp. 3591-3593

MOLECULAR-BEAM EPITAXY OF LOW DEFECT DENSITY (LESS-THAN-OR-EQUAL-TO-1X10(4)CM(-2)) ZNSSE ON GAAS

Authors: WU BJ HAUGEN GM DEPUYDT JM KUO LH SALAMANCARIBA L

Citation: Bj. Wu et al., MOLECULAR-BEAM EPITAXY OF LOW DEFECT DENSITY (LESS-THAN-OR-EQUAL-TO-1X10(4)CM(-2)) ZNSSE ON GAAS, Applied physics letters, 68(20), 1996, pp. 2828-2830

GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS

Authors: KUO LH SALAMANCARIBA L WU BJ HAUGEN GM DEPUYDT JM HOFLER G CHENG H

Citation: Lh. Kuo et al., GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1694-1704

SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES

Authors: WU BJ DEPUYDT JM HAUGEN GM HAASE MA

Citation: Bj. Wu et al., SHORT-PERIOD SUPERLATTICE II-VI BLUE-LIGHT-EMITTING DIODES, Electronics Letters, 31(12), 1995, pp. 1015-1016

TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES

Authors: UREN GD HAUGEN GM BAUDE PF HAASE MA LAW KK MILLER TJ WU BJ

Citation: Gd. Uren et al., TRANSMISSION ELECTRON-MICROSCOPY OF (100) DARK LINE DEFECTS IN CDZNSEQUANTUM-WELL STRUCTURES, Applied physics letters, 67(26), 1995, pp. 3862-3864

PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS

Authors: HAUGEN GM GUHA S CHENG H DEPUYDT JM HAASE MA HOFLER GE QIU J WU BJ

Citation: Gm. Haugen et al., PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS, Applied physics letters, 66(3), 1995, pp. 358-360

WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY

Authors: WU BJ DEPUYDT JM HAUGEN GM HOFLER GE HAASE MA CHENG H GUHA S QIU J KUO LH SALAMANCARIBA L

Citation: Bj. Wu et al., WIDE-BAND GAP MGZNSSE GROWN ON (001) GAAS BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(25), 1995, pp. 3462-3464

COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES

Authors: KUO LH SALAMANCARIBA L WU BJ DEPUYDT JM HAUGEN GM CHENG H GUHA S HAASE MA

Citation: Lh. Kuo et al., COMPOSITION MODULATION IN LATTICE-MATCHED ZN1-XMGXSYSE1-Y ZNSE BUFFERLAYER GAAS HETEROSTRUCTURES, Applied physics letters, 65(10), 1994, pp. 1230-1232

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