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Results: 1-25/36
Authors:
SCHNEIDER JM
BITZER K
RIEGER J
HEINECKE H
Citation: Jm. Schneider et al., HIGHLY CARBON-DOPED GA0.47IN0.53AS CONTACT LAYERS GROWN BY USING CARBONTETRABROMIDE IN MBE ON MOVPE 1.55 MU-M GAINASP INP MQW LASER STRUCTURES/, Journal of crystal growth, 188(1-4), 1998, pp. 56-62
Authors:
RITTER D
KEIDLER M
HEINECKE H
Citation: D. Ritter et al., GROWTH OF INP USING TBP AND DTBP IN METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 188(1-4), 1998, pp. 152-158
Authors:
KEIDLER M
RITTER D
BAUMEISTER H
DRUMINSKI M
HEINECKE H
Citation: M. Keidler et al., PLANAR SELECTIVE-AREA GROWTH OF DH LASER STRUCTURES USING HYDRIDES, TERTIARYBUTYL AND DITERTIARYBUTYL GROUP-V PRECURSORS IN MOMBE, Journal of crystal growth, 188(1-4), 1998, pp. 168-175
Authors:
MARHEINEKE B
VEUHOFF E
HEINECKE H
Citation: B. Marheineke et al., DOPANT INCORPORATION BEHAVIOR DURING MOMBE GROWTH OF INP ON (1 0 0), (1 1 1) AND NONPLANAR SURFACES, Journal of crystal growth, 188(1-4), 1998, pp. 183-190
Authors:
LIMMER W
GERSTER J
AIGLE M
PORSCHE J
SCHNEIDER JM
MARHEINEKE B
HEINECKE H
SAUER R
Citation: W. Limmer et al., SPATIALLY-RESOLVED CHARACTERIZATION OF MATERIAL COMPOSITION AND FREE-CARRIER CONCENTRATION BY MICRO-RAMAN SPECTROSCOPY AT SURFACE SELECTIVELY GROWN LAYERS, Journal of crystal growth, 188(1-4), 1998, pp. 225-230
Authors:
POPP M
BAUMEISTER H
VEUHOFF E
HEINECKE H
Citation: M. Popp et al., ELEMENT INCORPORATION IN GAINASP FOR UNIFORM LARGE-AREA MOMBE, Journal of crystal growth, 188(1-4), 1998, pp. 247-254
Authors:
BAUMEISTER H
VEUHOFF E
POPP M
HEINECKE H
Citation: H. Baumeister et al., GRINSCH GAINASP MQW LASER STRUCTURES GROWN BY MOMBE, Journal of crystal growth, 188(1-4), 1998, pp. 266-274
Authors:
BARENZ J
ANGER P
HOLLRICHER O
MARTI O
WACHTER M
BUTENDEICH R
HEINECKE H
Citation: J. Barenz et al., SPATIALLY-RESOLVED NEAR-FIELD SPECTROSCOPY ON LOCALIZED GAINASP INP DOUBLE HETEROSTRUCTURES/, Journal of applied physics, 83(2), 1998, pp. 870-876
Authors:
BARENZ J
ESKA A
HOLLRICHER O
MARTI O
WACHTER M
SCHOFFEL U
HEINECKE H
Citation: J. Barenz et al., NEAR-FIELD LUMINESCENCE MEASUREMENTS ON GAINASP INP DOUBLE HETEROSTRUCTURES AT ROOM-TEMPERATURE/, Applied optics, 37(1), 1998, pp. 106-112
Authors:
HEINECKE H
WACHTER M
Citation: H. Heinecke et M. Wachter, MECHANISMS AND APPLICATIONS OF SELECTIVE-AREA GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY (CBE), Applied surface science, 114, 1997, pp. 1-8
Authors:
HEINECKE H
WACHTER M
SCHOFFEL U
Citation: H. Heinecke et al., FACET FORMATION AND CHARACTERIZATION OF III-V STRUCTURES GROWN ON PATTERNED SURFACES, Microelectronics, 28(8-10), 1997, pp. 803-815
Authors:
WACHTER M
MENKE C
HEINECKE H
Citation: M. Wachter et al., ANISOTROPIC SURFACE-DIFFUSION AT CRYSTAL FACET TRANSITIONS DURING LOCALIZED GA-IN-AS-P GROWTH BY MOMBE, Microelectronics, 28(8-10), 1997, pp. 841-848
Authors:
SCHNEIDER JM
ZIEGLER J
HEINECKE H
Citation: Jm. Schneider et al., INCORPORATION BEHAVIOR OF CARBON AND SILICON ON (100) AND (111) SURFACES DURING GROWTH OF GAAS GAAS AND GA0.47IN0.53AS/INP BY MOLECULAR-BEAM EPITAXY/, Microelectronics, 28(8-10), 1997, pp. 977-983
Authors:
GERSTER J
SCHNEIDER JM
EHRET C
LIMMER W
SAUER R
HEINECKE H
Citation: J. Gerster et al., SPATIALLY-RESOLVED RAMAN INVESTIGATION OF SI-DOPED GAAS-LAYERS ON PATTERNED GAAS(100) SUBSTRATES GROWN BY MOLECULAR-BEAM EPITAXY, Microelectronics, 28(8-10), 1997, pp. 985-992
Authors:
WACHTER M
SCHOFFEL U
SCHIER M
HEINECKE H
Citation: M. Wachter et al., LATERAL COUPLING OF INP GAINASP/INP STRUCTURES BY SELECTIVE-AREA MOMBE/, Journal of crystal growth, 175, 1997, pp. 1186-1194
Authors:
POPP M
HEINECKE H
BAUMEISTER H
VEUHOFF E
Citation: M. Popp et al., FULL GASEOUS SOURCE GROWTH OF SEPARATE-CONFINEMENT MQW 1.55 MU-M LASER STRUCTURES IN A PRODUCTION MOMBE, Journal of crystal growth, 175, 1997, pp. 1247-1253
Authors:
SCHNEIDER JM
PIETRALLA JT
HEINECKE H
Citation: Jm. Schneider et al., CONTROL OF CHEMICAL-COMPOSITION AND BAND-GAP ENERGY IN GAXIN1-X-YALYAS ON INP DURING MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 184-190
Authors:
RITTER D
HEINECKE H
Citation: D. Ritter et H. Heinecke, EVALUATION OF CRACKING EFFICIENCY OF AS AND P PRECURSORS, Journal of crystal growth, 170(1-4), 1997, pp. 149-154
Authors:
KEIDLER M
POPP M
RITTER D
MARHEINEKE B
HEINECKE H
BAUMEISTER H
VEUHOFF E
Citation: M. Keidler et al., GROWTH OF 1.55-MU-M DH LASERSTRUCTURES USING TBAS AND TBP IN MOMBE, Journal of crystal growth, 170(1-4), 1997, pp. 161-166
Authors:
GERSTER J
SCHNEIDER JM
EHRET C
LIMMER W
SAUER R
HEINECKE H
Citation: J. Gerster et al., MICRO-RAMAN CHARACTERIZATION OF THE ELECTRONIC-PROPERTIES OF SI-DOPEDGAAS-LAYERS GROWN ON PATTERNED SUBSTRATES, Applied physics letters, 70(1), 1997, pp. 69-71
Authors:
MARHEINEKE B
POPP M
HEINECKE H
Citation: B. Marheineke et al., GROWTH OF GAINAS(P) USING A MULTIWAFER MOMBE, Journal of crystal growth, 164(1-4), 1996, pp. 16-21
Authors:
WACHTER M
HEINECKE H
Citation: M. Wachter et H. Heinecke, BEAM GEOMETRICAL EFFECTS ON PLANAR SELECTIVE-AREA EPITAXY OF INP GAINAS HETEROSTRUCTURES/, Journal of crystal growth, 164(1-4), 1996, pp. 302-307
ZN DOPING OF INP GAINASP DEVICE STRUCTURES IN METALORGANIC MOLECULAR-BEAM EPITAXY USING DIETHYLZINC/
Authors:
VEUHOFF E
BAUMEISTER H
TREICHLER R
POPP M
HEINECKE H
Citation: E. Veuhoff et al., ZN DOPING OF INP GAINASP DEVICE STRUCTURES IN METALORGANIC MOLECULAR-BEAM EPITAXY USING DIETHYLZINC/, Journal of crystal growth, 164(1-4), 1996, pp. 402-408
Authors:
IBERL A
GOBEL H
HEINECKE H
Citation: A. Iberl et al., CHARACTERIZATION OF III-V HETEROSTRUCTURES GROWN BY SELECTIVE-AREA EPITAXY USING DOUBLE-CRYSTAL X-RAY-DIFFRACTOMETRY WITH HIGH LATERAL RESOLUTION, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 172-178
Authors:
IBERL A
SCHUSTER M
GOBEL H
MEYER A
BAUR B
MATZ R
SNIGIREV A
SNIGIREVA I
FREUND A
LENGELER B
HEINECKE H
Citation: A. Iberl et al., MICRO-FOCUS DOUBLE-CRYSTAL X-RAY-DIFFRACTOMETRY ON III-V HETEROSTRUCTURES GROWN BY SELECTIVE-AREA EPITAXY, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 200-205