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Results: 1-25/26
Authors:
ANTONOV VN
JEPSEN O
HENRION W
REBIEN M
STAUSS P
LANGE H
Citation: Vn. Antonov et al., ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF BETA-FESI2, Physical review. B, Condensed matter, 57(15), 1998, pp. 8934-8938
Authors:
HENRION W
REBIEN M
ANTONOV VN
JEPSEN O
LANGE H
Citation: W. Henrion et al., OPTICAL CHARACTERIZATION OF RU2SI3 BY SPECTROSCOPIC ELLIPSOMETRY, UV-VIS-NIR SPECTROSCOPY AND BAND-STRUCTURE CALCULATIONS, Thin solid films, 313, 1998, pp. 218-221
Authors:
ANGERMANN H
HENRION W
REBIEN M
FISCHER D
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., H-TERMINATED SILICON - SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS CORRELATED TO THE SURFACE ELECTRONIC-PROPERTIES, Thin solid films, 313, 1998, pp. 552-556
Authors:
FILONOV AB
MIGAS DB
SHAPOSHNIKOV VL
BORISENKO VE
HENRION W
REBIEN M
STAUSS P
LANGE H
BEHR G
Citation: Ab. Filonov et al., THEORETICAL AND EXPERIMENTAL-STUDY OF INTERBAND OPTICAL-TRANSITIONS IN SEMICONDUCTING IRON DISILICIDE, Journal of applied physics, 83(8), 1998, pp. 4410-4414
Authors:
WIESER E
PANKNIN D
BARRADAS NP
BETZL M
REUTHER H
HENRION W
LANGE H
Citation: E. Wieser et al., FORMATION OF TERNARY (FE1-XCOX)SI-2 STRUCTURES BY ION-BEAM-ASSISTED DEPOSITION AND ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(4), 1997, pp. 533-541
Authors:
ANGERMANN H
HENRION W
REBIEN M
KLIEFOTH K
FISCHER D
ZETTLER JT
Citation: H. Angermann et al., EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/, Microelectronic engineering, 36(1-4), 1997, pp. 43-46
Authors:
GUIZZETTI G
MARABELLI F
PATRINI M
PELLEGRINO P
PIVAC B
MIGLIO L
MEREGALLI V
LANGE H
HENRION W
Citation: G. Guizzetti et al., MEASUREMENT AND SIMULATION OF ANISOTROPY IN THE INFRARED AND RAMAN-SPECTRA OF BETA-FESI2 SINGLE-CRYSTALS, Physical review. B, Condensed matter, 55(21), 1997, pp. 14290-14297
Authors:
ANGERMANN H
HENRION W
REBIEN M
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., CHARACTERIZATION OF CHEMICALLY PREPARED SI-SURFACES BY UV-VIS AND IR SPECTROSCOPIC ELLIPSOMETRY AND SURFACE PHOTOVOLTAGE, Surface science, 388(1-3), 1997, pp. 15-23
Authors:
DITTRICH T
SIEBER I
HENRION W
RAUSCHER S
WANDERKA N
RAPPICH J
Citation: T. Dittrich et al., SELECTIVE LASER-INDUCED MELTING OF ULTRATHIN NANOPOROUS SILICON LAYERS, Applied physics A: Materials science & processing, 63(5), 1996, pp. 467-470
Authors:
PANKNIN D
WIESER E
SKORUPA W
HENRION W
LANGE H
Citation: D. Panknin et al., BURIED (FE1-XCOX)SI-2 LAYERS WITH VARIABLE BAND-GAP FORMED BY ION BEAM SYNTHESIS, Applied physics A: Materials science & processing, 62(2), 1996, pp. 155-162
Authors:
TOMM Y
IVANEKO L
IRMSCHER K
BREHME S
HENRION W
SIEBER I
LANGE H
Citation: Y. Tomm et al., EFFECTS OF DOPING ON THE ELECTRONIC-PROPERTIES OF SEMICONDUCTING IRONDISILICIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 215-218
Authors:
LANGE H
HENRION W
FENSKE F
ZETTLER T
SCHUMANN J
TEICHERT S
Citation: H. Lange et al., OPTICAL INTERBAND PROPERTIES OF SOME SEMICONDUCTING SILICIDES, Physica status solidi. b, Basic research, 194(1), 1996, pp. 231-240
Authors:
TEICHERT S
KILPER R
ERBEN J
FRANKE D
GEBHARD B
FRANKE T
HAUSSLER P
HENRION W
LANGE H
Citation: S. Teichert et al., PREPARATION AND PROPERTIES OF THIN POLYCRYSTALLINE MNSI1.73 FILMS, Applied surface science, 104, 1996, pp. 679-684
Authors:
LANGE H
HENRION W
SELLE B
REINSPERGER GU
OERTEL G
VONKANEL H
Citation: H. Lange et al., OPTICAL-PROPERTIES OF BETA-FESI2 FILMS GROWN ON SI SUBSTRATES WITH DIFFERENT DEGREE OF STRUCTURAL PERFECTION, Applied surface science, 102, 1996, pp. 169-172
Authors:
KRANKENHAGEN R
SCHMIDT M
GREBNER S
POSCHENRIEDER M
HENRION W
SIEBER I
KOYNOV S
SCHWARZ R
Citation: R. Krankenhagen et al., CORRELATION BETWEEN STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES OF MU-C-SI FILMS, Journal of non-crystalline solids, 200, 1996, pp. 923-926
Authors:
KOYNOV S
GREBNER S
RADOJKOVIC P
HARTMANN E
SCHWARZ R
VASILEV L
KRANKENHAGEN R
SIEBER I
HENRION W
SCHMIDT M
Citation: S. Koynov et al., INITIAL-STAGES OF MICROCRYSTALLINE SILICON FILM GROWTH, Journal of non-crystalline solids, 200, 1996, pp. 1012-1016
Authors:
FILONOV AB
MIGAS DB
SHAPOSHNIKOV VL
DOROZHKIN NN
PETROV GV
BORISENKO VE
HENRION W
LANGE H
Citation: Ab. Filonov et al., ELECTRONIC AND RELATED PROPERTIES OF CRYSTALLINE SEMICONDUCTING IRON DISILICIDE, Journal of applied physics, 79(10), 1996, pp. 7708-7712
Authors:
TEICHERT S
KILPER R
FRANKE T
ERBEN J
HAUSSLER P
HENRION W
LANGE H
PANKNIN D
Citation: S. Teichert et al., ELECTRICAL AND OPTICAL-PROPERTIES OF THIN FE1-XCOXSI2 FILMS, Applied surface science, 91(1-4), 1995, pp. 56-62
Authors:
PANKNIN D
EICHORN F
WIESER E
SKORUPA W
HENRION W
ALBRECHT J
Citation: D. Panknin et al., ELECTRICAL AND OPTICAL-PROPERTIES OF BETA-FESI2 AFTER CO IMPLANTATIONAND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 172-175
Authors:
KRANKENHAGEN R
SCHMIDT M
HENRION W
SIEBER I
SELLE B
FLIETNER H
Citation: R. Krankenhagen et al., OPTICAL AND PHOTOELECTRICAL PROPERTIES OF MU-C-SI LAYERS AND THE INFLUENCE OF SUBSEQUENT HYDROGENATION, Physica status solidi. a, Applied research, 145(2), 1994, pp. 401-406
Authors:
SCHUMANN J
ELEFANT D
GLADUN C
HEINRICH A
PITSCHKE W
LANGE H
HENRION W
GROTZSCHEL R
Citation: J. Schumann et al., POLYCRYSTALLINE IRIDIUM SILICIDE FILMS - PHASE-FORMATION, ELECTRICAL AND OPTICAL-PROPERTIES, Physica status solidi. a, Applied research, 145(2), 1994, pp. 429-439
Authors:
COLELL H
ALONSOVANTE N
FIECHTER S
SCHIECK R
DIESNER K
HENRION W
TRIBUTSCH H
Citation: H. Colell et al., CRYSTAL-GROWTH AND PROPERTIES OF NOVEL TERNARY TRANSITION-METAL CHALCOGENIDE COMPOUNDS [IEXRU1-XS2 (0.005-LESS-THAN-X-LESS-THAN-0.5)], Materials research bulletin, 29(10), 1994, pp. 1065-1072
CHARACTERIZATION OF THE HETEROSTRUCTURE BETWEEN HETEROEPITAXIALLY GROWN BETA-FESI2 AND (111)-SILICON
Authors:
PAULI M
DUCKER M
DOSCHER M
MULLER J
HENRION W
LANGE H
Citation: M. Pauli et al., CHARACTERIZATION OF THE HETEROSTRUCTURE BETWEEN HETEROEPITAXIALLY GROWN BETA-FESI2 AND (111)-SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 270-273
Authors:
HENRION W
LANGE H
JAHNE E
GIEHLER M
Citation: W. Henrion et al., OPTICAL-PROPERTIES OF CHROMIUM AND IRON DISILICIDE LAYERS, Applied surface science, 70-1, 1993, pp. 569-572
Authors:
WIESER E
PANKNIN D
SKORUPA W
QUERNER G
HENRION W
ALBRECHT J
Citation: E. Wieser et al., ION-BEAM SYNTHESIS OF TERNARY (FE1-XCOX)SI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 867-871