Authors:
MULLER B
HEUN S
LANTIER R
RUBINI S
PAGGEL JJ
SORBA L
BONANNI A
LAZZARINO M
BONANNI B
FRANCIOSI A
NAPOLITANI E
ROMANATO F
DRIGO A
BONARD JM
GANIERE JD
LAZZARINI L
SALVIATI G
Citation: B. Muller et al., NATIVE EXTENDED DEFECTS IN ZN1-YGDYSE INXGA1-XAS HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2334-2341
Authors:
TORRELLES X
RIUS J
BOSCHERINI F
HEUN S
MUELLER BH
FERRER S
ALVAREZ J
MIRAVITLLES C
Citation: X. Torrelles et al., APPLICATION OF X-RAY DIRECT-METHODS TO SURFACE RECONSTRUCTIONS - THE SOLUTION OF PROJECTED SUPERSTRUCTURES, Physical review. B, Condensed matter, 57(8), 1998, pp. 4281-4284
Authors:
HEUN S
PAGGEL JJ
SORBA L
RUBINI S
BONANNI A
LANTIER R
LAZZARINO M
BONANNI B
FRANCIOSI A
BONARD JM
GANIERE JD
ZHUANG Y
BAUER G
Citation: S. Heun et al., STRAIN AND SURFACE-MORPHOLOGY IN LATTICE-MATCHED ZNSE INXGA1-XAS HETEROSTRUCTURES/, Journal of applied physics, 83(5), 1998, pp. 2504-2510
Authors:
HEUN S
PAGGEL JJ
SORBA L
RUBINI S
FRANCIOSI A
BONARD JM
GANIERE JD
Citation: S. Heun et al., LOCAL INTERFACE COMPOSITION AND EXTENDED DEFECT DENSITY IN ZNSE GAAS(001) AND ZNSE/IN0.04GA0.96AS(001) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1279-1285
Authors:
BONARD JM
GANIERE JD
HEUN S
PAGGEL JJ
RUBINI S
SORBA L
FRANCIOSI A
Citation: Jm. Bonard et al., STACKING-FAULTS IN PSEUDOMORPHIC ZNSE-GAAS AND LATTICE-MATCHED ZNSE-IN0.04GA0.96AS LAYERS, Philosophical magazine letters, 75(4), 1997, pp. 219-226
Authors:
HEUN S
PAGGEL JJ
SORBA L
RUBINI S
FRANCIOSI A
BONARD JM
GANIERE JD
Citation: S. Heun et al., INTERFACE COMPOSITION AND STACKING-FAULT DENSITY IN II-VI III-V HETEROSTRUCTURES/, Applied physics letters, 70(2), 1997, pp. 237-239
Citation: S. Heun et al., ZN PREADSORPTION ON GAAS(100)2X4 PRIOR TO ZNSE GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2980-2984
Citation: S. Heun et al., IMAGING SPECTROSCOPY THROUGH PERSISTENT SPECTRAL HOLE-BURNING, Advanced materials for optics and electronics, 6(5-6), 1996, pp. 245
Citation: S. Heun et al., IMAGING SPECTROSCOPY THROUGH PERSISTENT SPECTRAL HOLE-BURNING, Advanced materials for optics and electronics, 6(5-6), 1996, pp. 345-347
Authors:
OSHIMA M
WATANABE Y
HEUN S
SUGIYAMA M
KIYOKURA T
Citation: M. Oshima et al., INITIAL-STAGES OF NANOCRYSTAL GROWTH OF COMPOUND SEMICONDUCTORS ON SISUBSTRATES, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 129-132
Citation: S. Maeyama et al., (NH4)(2)S-X-TREATED INP(100) SURFACES STUDIED BY SOFT-X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of electronic materials, 25(4), 1996, pp. 593-596
Authors:
HEUN S
SUGIYAMA M
MAEYAMA S
WATANABE Y
WADA K
OSHIMA M
Citation: S. Heun et al., GROWTH OF SI ON DIFFERENT GAAS-SURFACES - A COMPARATIVE-STUDY, Physical review. B, Condensed matter, 53(20), 1996, pp. 13534-13541
Citation: S. Heun et Pm. Borsenberger, A COMPARATIVE-STUDY OF HOLE TRANSPORT IN VAPOR-DEPOSITED MOLECULAR GLASSES OF RAKIS(4-METHYLPHENYL)-(1,1'-BIPHENYL)-4,4'-DIAMINE AND '-BIS(3-METHYLPHENYL)-(1,1'-BIPHENYL)-4,4'-DIAMINE, Chemical physics, 200(1-2), 1995, pp. 245-255
Citation: S. Heun et al., THE SPECTRAL ASSESSMENT OF THE ORIGIN OF THE POLARONIC CONTRIBUTION TO CHARGE-TRANSPORT IN A HIGHLY CONJUGATED TRIARYLAMINE DONOR MOLECULE, Chemical physics, 200(1-2), 1995, pp. 265-270
Authors:
HARTENSTEIN B
BASSLER H
HEUN S
BORSENBERGER P
VANDERAUWERAER M
DESCHRYVER FC
Citation: B. Hartenstein et al., CHARGE-TRANSPORT IN MOLECULARLY DOPED POLYMERS AT LOW DOPANT CONCENTRATIONS - SIMULATION AND EXPERIMENT, Chemical physics, 191(1-3), 1995, pp. 321-332
Citation: M. Sugiyama et al., CHEMICAL-STATE-RESOLVED X-RAY STANDING-WAVE ANALYSIS USING CHEMICAL-SHIFT IN PHOTOELECTRON-SPECTRA, Physical review. B, Condensed matter, 51(20), 1995, pp. 14778-14781
Authors:
SUGIYAMA M
MAEYAMA S
WATANABE Y
HEUN S
OSHIMA M
Citation: M. Sugiyama et al., ORDERING OF SULFUR INTERLAYER IN MOLECULAR-BEAM EPITAXY-GROWN SRF2, S/GAAS(111)A AND SRF2,/S/GAAS(111)B/, Journal of crystal growth, 150(1-4), 1995, pp. 1098-1103
Authors:
HEUN S
SUGIYAMA M
MAEYAMA S
WATANABE Y
OSHIMA M
Citation: S. Heun et al., MORPHOLOGY OF THIN SRF2 FILMS ON INP(111) STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, Journal of crystal growth, 150(1-4), 1995, pp. 1108-1114
Citation: S. Maeyama et al., X-RAY-ABSORPTION FINE-STRUCTURE STUDIES OF SULFUR INTERLAYERS IN MOLECULAR-BEAM EPITAXY-GROWN SRF2 S/GAAS(111)/, Journal of crystal growth, 150(1-4), 1995, pp. 1122-1125