Results: 1-17 |
Results: 17
CATHODOLUMINESCENCE IMAGING OF MISFIT DISLOCATIONS IN SI SIGE EPITAXIAL LAYERS - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION/
Authors: HIGGS V ZHOU TQ ROZGONYI GA
Citation: V. Higgs et al., CATHODOLUMINESCENCE IMAGING OF MISFIT DISLOCATIONS IN SI SIGE EPITAXIAL LAYERS - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 48-51
CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES
Authors: HIGGS V LIGHTOWLERS EC USAMI N SHIRAKI Y MINE T FUKATSU S
Citation: V. Higgs et al., CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 1070-1073
CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY
Authors: HIGGS V LIGHTOWLERS EC USAMI N MINE T FUKATSU S SHIRAKI Y
Citation: V. Higgs et al., CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY, Applied physics letters, 67(12), 1995, pp. 1709-1711
CHARACTERIZATION OF SI SI1-XGEX/SI QUANTUM-WELLS BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY/
Authors: HIGGS V LIGHTOWLERS EC XIAO X STURM JC
Citation: V. Higgs et al., CHARACTERIZATION OF SI SI1-XGEX/SI QUANTUM-WELLS BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY/, Applied physics letters, 64(5), 1994, pp. 607-609
CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/
Authors: HIGGS V LIGHTOWLERS EC APETZ R VESCAN L
Citation: V. Higgs et al., CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/, Semiconductor science and technology, 12(4), 1997, pp. 409-412
EFFECT OF HYDROGENATION ON THE LUMINESCENCE OF STRAINED SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: TIJERO JMG ARBETENGELS V MANISSADJIAN A WANG KL HIGGS V
Citation: Jmg. Tijero et al., EFFECT OF HYDROGENATION ON THE LUMINESCENCE OF STRAINED SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(2), 1993, pp. 1279-1282
INFLUENCE OF COPPER CONTAMINATION ON RECOMBINATION ACTIVITY OF MISFITDISLOCATIONS IN SIGE SI EPILAYERS - TEMPERATURE-DEPENDENCE OF ACTIVITY AS A MARKER CHARACTERIZING THE CONTAMINATION LEVEL/
Authors: KITTLER M ULHAQBOUILLET C HIGGS V
Citation: M. Kittler et al., INFLUENCE OF COPPER CONTAMINATION ON RECOMBINATION ACTIVITY OF MISFITDISLOCATIONS IN SIGE SI EPILAYERS - TEMPERATURE-DEPENDENCE OF ACTIVITY AS A MARKER CHARACTERIZING THE CONTAMINATION LEVEL/, Journal of applied physics, 78(7), 1995, pp. 4573-4583
INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI SIGE EPILAYERS/
Authors: HIGGS V KITTLER M
Citation: V. Higgs et M. Kittler, INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI SIGE EPILAYERS/, Applied physics letters, 65(22), 1994, pp. 2804-2806
INVESTIGATION OF THE GROWTH TECHNIQUE DEPENDENCE ON THE OPTICAL-PROPERTIES OF SI1-XGEX ALLOY LAYERS
Authors: ARBETENGELS V TIJERO JMG MANISSADJIAN A WANG KL HIGGS V
Citation: V. Arbetengels et al., INVESTIGATION OF THE GROWTH TECHNIQUE DEPENDENCE ON THE OPTICAL-PROPERTIES OF SI1-XGEX ALLOY LAYERS, Journal of crystal growth, 127(1-4), 1993, pp. 406-410
INVESTIGATION OF THE RECOMBINATION ACTIVITY OF MISFIT DISLOCATIONS INSI SIGE EPILAYERS BY CATHODOLUMINESCENCE IMAGING AND THE ELECTRON-BEAM-INDUCED CURRENT TECHNIQUE/
Authors: HIGGS V KITTLER M
Citation: V. Higgs et M. Kittler, INVESTIGATION OF THE RECOMBINATION ACTIVITY OF MISFIT DISLOCATIONS INSI SIGE EPILAYERS BY CATHODOLUMINESCENCE IMAGING AND THE ELECTRON-BEAM-INDUCED CURRENT TECHNIQUE/, Applied physics letters, 63(15), 1993, pp. 2085-2087
LARGE PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI GE SUPERLATTICES/
Authors: HARTUNG J HIGGS V DAVIES G LIGHTOWLERS EC ARBETENGELS V WANG KL
Citation: J. Hartung et al., LARGE PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI GE SUPERLATTICES/, JPN J A P 1, 33(4B), 1994, pp. 2340-2343
LUMINESCENCE ASSOCIATED WITH THE PRESENCE OF DISLOCATIONS IN SILICON
Authors: LIGHTOWLERS EC HIGGS V
Citation: Ec. Lightowlers et V. Higgs, LUMINESCENCE ASSOCIATED WITH THE PRESENCE OF DISLOCATIONS IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 665-672
LUMINESCENCE FROM ROD-LIKE DEFECTS AND HYDROGEN-RELATED CENTERS IN SILICON
Authors: LIGHTOWLERS EC JEYANATHAN L SAFONOV AN HIGGS V DAVIES G
Citation: Ec. Lightowlers et al., LUMINESCENCE FROM ROD-LIKE DEFECTS AND HYDROGEN-RELATED CENTERS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 144-151
MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON
Authors: VANHELLEMONT J SENKADER S KISSINGER G HIGGS V TRAUWAERT MA GRAF D LAMBERT U WAGNER P
Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362
NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD
Authors: VANHELLEMONT J MILITA S SERVIDORI M HIGGS V KISSINGER G GRAMENOVA E SIMOEN E JANSEN P
Citation: J. Vanhellemont et al., NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD, Journal de physique. III, 7(7), 1997, pp. 1425-1433
RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES
Authors: KITTLER M ULHAQBOUILLET C HIGGS V
Citation: M. Kittler et al., RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 52-55
TRAPS FOR EXCITONS AND INTERSTITIAL ATOMS IN EDGE-DEFINED FILM-FED GROWTH-SILICON
Authors: DAVIES G PARK SC HIGGS V SAWYER WD
Citation: G. Davies et al., TRAPS FOR EXCITONS AND INTERSTITIAL ATOMS IN EDGE-DEFINED FILM-FED GROWTH-SILICON, Applied physics letters, 63(13), 1993, pp. 1783-1785
Risultati: 1-17 |