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Results:
1-17
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Results: 17
Authors:
VANHELLEMONT J
MILITA S
SERVIDORI M
HIGGS V
KISSINGER G
GRAMENOVA E
SIMOEN E
JANSEN P
Citation: J. Vanhellemont et al., NONDESTRUCTIVE TECHNIQUES FOR IDENTIFICATION AND CONTROL OF PROCESSING INDUCED EXTENDED DEFECTS IN SILICON AND CORRELATION WITH DEVICE YIELD, Journal de physique. III, 7(7), 1997, pp. 1425-1433
Authors:
HIGGS V
LIGHTOWLERS EC
APETZ R
VESCAN L
Citation: V. Higgs et al., CORRELATION BETWEEN OXYGEN DISTRIBUTION AND LUMINESCENCE EFFICIENCY IN SIGE SI LAYER STRUCTURES MEASURED BY CATHODOLUMINESCENCE IMAGING ANDSPECTROSCOPY/, Semiconductor science and technology, 12(4), 1997, pp. 409-412
Authors:
VANHELLEMONT J
SENKADER S
KISSINGER G
HIGGS V
TRAUWAERT MA
GRAF D
LAMBERT U
WAGNER P
Citation: J. Vanhellemont et al., MEASUREMENT, MODELING AND SIMULATION OF DEFECTS IN AS-GROWN CZOCHRALSKI SILICON, Journal of crystal growth, 180(3-4), 1997, pp. 353-362
Authors:
HIGGS V
LIGHTOWLERS EC
USAMI N
SHIRAKI Y
MINE T
FUKATSU S
Citation: V. Higgs et al., CATHODOLUMINESCENCE INVESTIGATION OF SIGE QUANTUM WIRES FABRICATED ONV-GROOVE PATTERNED SI SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 1070-1073
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., INFLUENCE OF COPPER CONTAMINATION ON RECOMBINATION ACTIVITY OF MISFITDISLOCATIONS IN SIGE SI EPILAYERS - TEMPERATURE-DEPENDENCE OF ACTIVITY AS A MARKER CHARACTERIZING THE CONTAMINATION LEVEL/, Journal of applied physics, 78(7), 1995, pp. 4573-4583
Authors:
HIGGS V
LIGHTOWLERS EC
USAMI N
MINE T
FUKATSU S
SHIRAKI Y
Citation: V. Higgs et al., CHARACTERIZATION OF SIGE QUANTUM-WIRE STRUCTURES BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY, Applied physics letters, 67(12), 1995, pp. 1709-1711
Authors:
HARTUNG J
HIGGS V
DAVIES G
LIGHTOWLERS EC
ARBETENGELS V
WANG KL
Citation: J. Hartung et al., LARGE PHOTOLUMINESCENCE FROM LOCALIZED EXCITONS IN SI GE SUPERLATTICES/, JPN J A P 1, 33(4B), 1994, pp. 2340-2343
Authors:
HIGGS V
ZHOU TQ
ROZGONYI GA
Citation: V. Higgs et al., CATHODOLUMINESCENCE IMAGING OF MISFIT DISLOCATIONS IN SI SIGE EPITAXIAL LAYERS - THE INFLUENCE OF TRANSITION-METAL CONTAMINATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 48-51
Authors:
KITTLER M
ULHAQBOUILLET C
HIGGS V
Citation: M. Kittler et al., RECOMBINATION ACTIVITY OF CLEAN AND CONTAMINATED MISFIT DISLOCATIONS IN SI(GE) STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 52-55
Authors:
LIGHTOWLERS EC
JEYANATHAN L
SAFONOV AN
HIGGS V
DAVIES G
Citation: Ec. Lightowlers et al., LUMINESCENCE FROM ROD-LIKE DEFECTS AND HYDROGEN-RELATED CENTERS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 144-151
Authors:
HIGGS V
KITTLER M
Citation: V. Higgs et M. Kittler, INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI SIGE EPILAYERS/, Applied physics letters, 65(22), 1994, pp. 2804-2806
Authors:
HIGGS V
LIGHTOWLERS EC
XIAO X
STURM JC
Citation: V. Higgs et al., CHARACTERIZATION OF SI SI1-XGEX/SI QUANTUM-WELLS BY CATHODOLUMINESCENCE IMAGING AND SPECTROSCOPY/, Applied physics letters, 64(5), 1994, pp. 607-609
Authors:
LIGHTOWLERS EC
HIGGS V
Citation: Ec. Lightowlers et V. Higgs, LUMINESCENCE ASSOCIATED WITH THE PRESENCE OF DISLOCATIONS IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 665-672
Authors:
ARBETENGELS V
TIJERO JMG
MANISSADJIAN A
WANG KL
HIGGS V
Citation: V. Arbetengels et al., INVESTIGATION OF THE GROWTH TECHNIQUE DEPENDENCE ON THE OPTICAL-PROPERTIES OF SI1-XGEX ALLOY LAYERS, Journal of crystal growth, 127(1-4), 1993, pp. 406-410
Authors:
TIJERO JMG
ARBETENGELS V
MANISSADJIAN A
WANG KL
HIGGS V
Citation: Jmg. Tijero et al., EFFECT OF HYDROGENATION ON THE LUMINESCENCE OF STRAINED SI1-XGEX ALLOY LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(2), 1993, pp. 1279-1282
Authors:
HIGGS V
KITTLER M
Citation: V. Higgs et M. Kittler, INVESTIGATION OF THE RECOMBINATION ACTIVITY OF MISFIT DISLOCATIONS INSI SIGE EPILAYERS BY CATHODOLUMINESCENCE IMAGING AND THE ELECTRON-BEAM-INDUCED CURRENT TECHNIQUE/, Applied physics letters, 63(15), 1993, pp. 2085-2087
Authors:
DAVIES G
PARK SC
HIGGS V
SAWYER WD
Citation: G. Davies et al., TRAPS FOR EXCITONS AND INTERSTITIAL ATOMS IN EDGE-DEFINED FILM-FED GROWTH-SILICON, Applied physics letters, 63(13), 1993, pp. 1783-1785
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1-17
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