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Results: 1-16 |
Results: 16

Authors: MANTL S HOLLANDER B LENSSEN D LOKEN M
Citation: S. Mantl et al., ION-BEAM SYNTHESIS OF SILICON-BASED MATERIALS, Materials chemistry and physics, 54(1-3), 1998, pp. 280-285

Authors: HOLLANDER B MANTL S MAYER M KIRCHNER C PELZMANN A KAMP M CHRISTIANSEN S ALBRECHT M STRUNK HP
Citation: B. Hollander et al., ION CHANNELING STUDIES OF GAN LAYERS ON C-ORIENTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1248-1252

Authors: HOLLKOTT J HU S BECKER C AUGE J SPANGENBERG B KURZ H ZAKHAROV ND HESSE D HOLLANDER B
Citation: J. Hollkott et al., JOSEPHSON-JUNCTIONS FABRICATED BY OXYGEN-ION IRRADIATION OF YBA2CU3O7-X THIN-FILMS, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 3674-3677

Authors: TISCH U HOLLANDER B HACKE M MESTERS S MICHELSEN W GUGGI D MANTL S KABIUS B
Citation: U. Tisch et al., FORMATION OF TERNARY CO1-XPDXSI2 ON SI(100) BY PD ION-IMPLANTATION INCOSI2 SI(100) HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 324-327

Authors: HOLLANDER B VESCAN L MESTERS S WICKENHAUSER S
Citation: B. Hollander et al., STRAIN AND MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE SI1-XGEXFILMS GROWN BY SELECTIVE EPITAXY, Thin solid films, 292(1-2), 1997, pp. 213-217

Authors: RUDIGER U FUMAGALLI P ROOS T HOLLANDER B GUNTHERODT G
Citation: U. Rudiger et al., MAGNETOOPTIC STUDY OF THE HIGH-TEMPERATURE COERCIVITY OF MNBIAL AND MNBIPT FILMS, IEEE transactions on magnetics, 33(5), 1997, pp. 3241-3243

Authors: RUDIGER U ROOS T GUNTHERODT G HOLLANDER B FUMAGALLI P
Citation: U. Rudiger et al., SUPPRESSION OF THE INCREASE OF HIGH-TEMPERATURE COERCIVITY IN MNBI THIN-FILMS BY AL INTERLAYERS, Applied physics letters, 70(19), 1997, pp. 2604-2606

Authors: JAUMANN M STIMMER J SCHITTENHELM P NUTZEL JF ABSTREITER G NEUFELD E HOLLANDER B BUCHAL C
Citation: M. Jaumann et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF ER-IMPLANTED SILICON DIODES GROWN BY MBE, Applied surface science, 102, 1996, pp. 327-330

Authors: WOHLLEBE A HOLLANDER B MESTERS S DIEKER C CRECELIUS G MICHELSEN W MANTL S
Citation: A. Wohllebe et al., SURFACE-DIFFUSION OF FE AND ISLAND GROWTH OF FESI2 ON SI(111) SURFACES, Thin solid films, 287(1-2), 1996, pp. 93-100

Authors: RUDIGER U FUMAGALLI P BERNDT H SCHIRMEISEN A GUNTHERODT G HOLLANDER B
Citation: U. Rudiger et al., EFFECT OF AL INTERLAYERS ON GROWTH AND MAGNETOOPTIC PROPERTIES OF MNBI THIN-FILMS, Journal of applied physics, 80(1), 1996, pp. 196-201

Authors: KASPER E SCHUH A BAUER G HOLLANDER B KIBBEL H
Citation: E. Kasper et al., TEST OF VEGARDS LAW IN THIN EPITAXIAL SIGE LAYERS, Journal of crystal growth, 157(1-4), 1995, pp. 68-72

Authors: LIE DYC VANTOMME A EISEN F VREELAND T NICOLET MA CARNS TK WANG KL HOLLANDER B
Citation: Dyc. Lie et al., DAMAGE AND STRAIN IN PSEUDOMORPHIC VS RELAXED GEXSI1-X LAYERS ON SI(100) GENERATED BY SI ION IRRADIATION, Journal of electronic materials, 23(4), 1994, pp. 369-373

Authors: HOLLANDER B MANTL S MICHELSEN W MESTERS S HARTMANN A VESCAN L GERTHSEN D
Citation: B. Hollander et al., FORMATION OF UNSTRAINED SI1-XGEX LAYERS BY HIGH-DOSE GE-74 ION-IMPLANTATION IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 218-221

Authors: HOLLANDER B MANTL S MICHELSEN W MESTERS S
Citation: B. Hollander et al., FORMATION OF RELAXED SI1-XGEX LAYERS ON SIMOX BY HIGH-DOSE GE-74 ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 777-780

Authors: HOLLANDER B KRUG H
Citation: B. Hollander et H. Krug, EFFECTS OF HIGH CO2-CONCENTRATIONS ON VEGETABLE SPECIES .2. GROWTH, CO2-GAS-EXCHANGE AND STOMATA RESISTANCE, Gartenbauwissenschaft, 57(1), 1992, pp. 32-43

Authors: HOLLANDER B
Citation: B. Hollander, CORRECTION, Gartenbauwissenschaft, 57(1), 1992, pp. 43-43
Risultati: 1-16 |