Authors:
HOMMEL J
HOHING B
GENG C
KESSLER M
HAASE D
SCHOLZ F
SCHWEIZER H
Citation: J. Hommel et al., ELECTRON-CYCLOTRON-RESONANCE (ECR) PLASMA-ASSISTED BANDGAP ENGINEERING IN GAINP ALGAINP/, Microelectronic engineering, 27(1-4), 1995, pp. 445-448
Authors:
GAUGGEL HP
GENG C
SCHWEIZER H
BARTH F
HOMMEL J
WINTERHOFF R
SCHOLZ F
Citation: Hp. Gauggel et al., FABRICATION AND OPERATION OF FIRST-ORDER GAINP ALGAINP DFB LASERS AT ROOM-TEMPERATURE/, Electronics Letters, 31(5), 1995, pp. 367-368
Authors:
HOMMEL J
SCHNEIDER F
MOSER M
GENG C
SCHOLZ F
SCHWEIZER H
Citation: J. Hommel et al., NEARLY DAMAGE-FREE DRY-ETCHING OF ALGAINP GAINP BY ELECTRON-CYCLOTRON-RESONANCE TECHNIQUE/, Microelectronic engineering, 23(1-4), 1994, pp. 349-352
Authors:
BERGMANN R
MENSCHIG A
LICHTENSTEIN N
HOMMEL J
HARLE V
SCHOLZ F
SCHWEIZER H
GRUTZMACHER D
Citation: R. Bergmann et al., INVESTIGATION OF BOUNDARY SCATTERING IN DRY-ETCHED QUANTUM WIRES BY ARTIFICIAL MANIPULATION OF THE WIRE BOUNDARIES, Microelectronic engineering, 23(1-4), 1994, pp. 429-432
Authors:
GENG C
MOSER M
WINTERHOFF R
LUX E
HOMMEL J
HOHING B
SCHWEIZER H
SCHOLZ F
Citation: C. Geng et al., ORDERING IN STRAINED GAXIN1-XP QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 740-745
Authors:
GRIESINGER UA
KADEN C
LICHTENSTEIN N
HOMMEL J
LEHR G
BERGMANN R
MENSCHIG A
SCHWEIZER H
HILLMER H
KOOPS HWP
KRETZ J
RUDOLPH M
Citation: Ua. Griesinger et al., INVESTIGATIONS OF ARTIFICIAL NANOSTRUCTURES AND LITHOGRAPHY TECHNIQUES WITH A SCANNING PROBE MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2441-2445
Authors:
HOMMEL J
OTTENWALDER D
HARLE V
SCHNEIDER F
MENSCHIG A
SCHOLZ F
SCHWEIZER H
Citation: J. Hommel et al., SPECIAL ANGLE TECHNIQUE WITH AR O2 - RIBE FOR THE FABRICATION OF STEEP NM-SCALE PROFILES IN INGAASP/INP AND SUBSEQUENT EPITAXIAL OVERGROWTH/, Microelectronic engineering, 21(1-4), 1993, pp. 333-336