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Results: 1-11 |
Results: 11
LITHOGRAPHY WITH 157 NM LASERS
Authors: BLOOMSTEIN TM HORN MW ROTHSCHILD M KUNZ RR PALMACCI ST GOODMAN RB
Citation: Tm. Bloomstein et al., LITHOGRAPHY WITH 157 NM LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2112-2116
A NEW METHOD FOR MEASURING THERMAL-CONDUCTIVITY OF THIN-FILMS
Authors: GOVORKOV S RUDERMAN W HORN MW GOODMAN RB ROTHSCHILD M
Citation: S. Govorkov et al., A NEW METHOD FOR MEASURING THERMAL-CONDUCTIVITY OF THIN-FILMS, Review of scientific instruments, 68(10), 1997, pp. 3828-3834
PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY
Authors: HORN MW MAXWELL BE GOODMAN RB KUNZ RR ERIKSEN LM
Citation: Mw. Horn et al., PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4207-4211
DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST
Authors: PALMATEER SC FORTE AR KUNZ RR HORN MW
Citation: Sc. Palmateer et al., DRY DEVELOPMENT OF SUB-0.25 MU-M FEATURES PATTERNED WITH 193 NM SILYLATION RESIST, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1132-1136
PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY
Authors: HORN MW ROTHSCHILD M MAXWELL BE GOODMAN RB KUNZ RR ERIKSEN LM
Citation: Mw. Horn et al., PLASMA-DEPOSITED SILYLATION RESIST FOR 193 NM LITHOGRAPHY, Applied physics letters, 68(2), 1996, pp. 179-181
193-NM LITHOGRAPHY
Authors: ROTHSCHILD M FORTE AR HORN MW KUNZ RR PALMATEER SC SEDLACEK JHC
Citation: M. Rothschild et al., 193-NM LITHOGRAPHY, IEEE journal of selected topics in quantum electronics, 1(3), 1995, pp. 916-923
PROFILE CONTROL IN DRY DEVELOPMENT OF HIGH-ASPECT-RATIO RESIST STRUCTURES
Authors: STERN MB PALMATEER SC HORN MW ROTHSCHILD M MAXWELL BE CURTIN JE
Citation: Mb. Stern et al., PROFILE CONTROL IN DRY DEVELOPMENT OF HIGH-ASPECT-RATIO RESIST STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3017-3021
APPLICATIONS OF LASERS IN MICROELECTRONICS AND MICROMECHANICS
Authors: KUNZ RR HORN MW BLOOMSTEIN TM EHRLICH DJ
Citation: Rr. Kunz et al., APPLICATIONS OF LASERS IN MICROELECTRONICS AND MICROMECHANICS, Applied surface science, 80, 1994, pp. 12-24
CHEMISTRY OF CR(VI) SOLVENT-EXTRACTION USING TRI-N-OCTYLAMINE
Authors: HORN MW FRASER BG PRITZKER MD LEGGE RL
Citation: Mw. Horn et al., CHEMISTRY OF CR(VI) SOLVENT-EXTRACTION USING TRI-N-OCTYLAMINE, Separation science and technology, 29(4), 1994, pp. 535-542
COMPARISON OF ETCHING TOOLS FOR RESIST PATTERN TRANSFER
Authors: HORN MW HARTNEY MA KUNZ RR
Citation: Mw. Horn et al., COMPARISON OF ETCHING TOOLS FOR RESIST PATTERN TRANSFER, Optical engineering, 32(10), 1993, pp. 2388-2394
LOW-TEMPERATURE ETCHING OF SILYLATED RESIST IN AN OXYGEN PLASMA GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE
Authors: SUNG KT JUAN WH PANG SW HORN MW
Citation: Kt. Sung et al., LOW-TEMPERATURE ETCHING OF SILYLATED RESIST IN AN OXYGEN PLASMA GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of the Electrochemical Society, 140(12), 1993, pp. 3620-3623
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