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Results:
1-13
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Results: 13
Authors:
CVIKL B
KOROSAK D
HORVATH ZJ
Citation: B. Cvikl et al., COMPARATIVE-STUDY OF I-V CHARACTERISTICS OF THE ICB DEPOSITED AG N-SI(111) AND AG/P-SI(100) SCHOTTKY JUNCTIONS/, Vacuum, 50(3-4), 1998, pp. 385-393
Authors:
HORVATH ZJ
ADAM M
PINTER I
CVIKL B
KOROSAK D
MRDJEN T
TUYEN VV
MAKARO Z
DUCSO C
BARSONY I
Citation: Zj. Horvath et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF SERIES RESISTANCE IN AG SI AND AL/SI SCHOTTKY JUNCTIONS/, Vacuum, 50(3-4), 1998, pp. 417-419
Authors:
HORVATH ZJ
ADAM M
DUCSO C
PINTER I
VANTUYEN V
BARSONY I
GOMBIA E
MOSCA R
MAKARO Z
Citation: Zj. Horvath et al., ELECTRICAL CHARACTERIZATION OF AL N-SI/P-SI SCHOTTKY JUNCTIONS PREPARED BY PLASMA IMMERSION IMPLANTATION/, Solid-state electronics, 42(2), 1998, pp. 221-228
Authors:
IVANEO J
HORVATH ZJ
VANTUYEN V
COLUZZA C
ALMEIDA J
TERRASI A
PECZ B
VINCZE G
MARGARITONDO G
Citation: J. Ivaneo et al., ELECTRICAL CHARACTERIZATION OF AU SIOX/N-GAAS JUNCTIONS/, Solid-state electronics, 42(2), 1998, pp. 229-233
Authors:
HORVATH ZJ
Citation: Zj. Horvath, ANALYSIS OF I-V MEASUREMENTS ON CRSI2-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE - COMMENT, Solid-state electronics, 39(1), 1996, pp. 176-178
Authors:
HORVATH ZJ
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
BIONDELLI D
Citation: Zj. Horvath et al., ELECTRICAL BEHAVIOR OF EPITAXIAL AL N-AL0.25GA0.75AS JUNCTIONS - EFFECT OF THE COMPOSITION OF UNDOPED ALXGA1-XAS CAP LAYER/, Vacuum, 46(8-10), 1995, pp. 959-961
Authors:
HORVATH ZJ
Citation: Zj. Horvath, LATERAL DISTRIBUTION OF SCHOTTKY-BARRIER HEIGHT - A THEORETICAL APPROACH, Vacuum, 46(8-10), 1995, pp. 963-966
Authors:
KOVACS B
MOLNAR G
DOZSA L
PETO G
ANDRASI M
KARANYI J
HORVATH ZJ
Citation: B. Kovacs et al., CURRENT-VOLTAGE ANOMALIES ON POLYCRYSTALLINE GDSI2 P-SI SCHOTTKY JUNCTIONS DUE TO GRAIN-BOUNDARIES/, Vacuum, 46(8-10), 1995, pp. 983-985
Authors:
ADAM M
HORVATH ZJ
BARSONY I
SZOLGYEMY L
VAZSONYI E
VANTUYEN V
Citation: M. Adam et al., INVESTIGATION OF ELECTRICAL-PROPERTIES OF AU POROUS SI SI STRUCTURES/, Thin solid films, 255(1-2), 1995, pp. 266-268
Authors:
HORVATH ZJ
Citation: Zj. Horvath, BREAKDOWN VOLTAGE OF HIGH-VOLTAGE GAAS SCHOTTKY DIODES - COMMENT, Solid-state electronics, 38(10), 1995, pp. 1835-1836
Authors:
HORVATH ZJ
VANTUYEN V
Citation: Zj. Horvath et V. Vantuyen, INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES - COMMENT, Applied physics letters, 66(22), 1995, pp. 3068-3068
Authors:
HORVATH ZJ
BOSACCHI A
FRANCHI S
GOMBIA E
MOSCA R
MOTTA A
Citation: Zj. Horvath et al., ANOMALOUS THERMIONIC-FIELD EMISSION IN EPITAXIAL AL N-ALGAAS JUNCTIONS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 429-432
Authors:
HORVATH ZJ
Citation: Zj. Horvath, CURRENT-VOLTAGE CHARACTERISTICS AND INTERFACE STATE DENSITY OF GAAS SCHOTTKY-BARRIER - COMMENT, Applied physics letters, 65(4), 1994, pp. 511-512
Risultati:
1-13
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