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Results:
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Results: 15
Authors:
YOW HK
HOUSTON PA
BUTTON CC
DAVID JPR
NG CMS
Citation: Hk. Yow et al., EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(1), 1998, pp. 17-23
Authors:
LYE BC
HOUSTON PA
BUTTON CC
DAVID JPR
Citation: Bc. Lye et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 42(1), 1998, pp. 115-120
Authors:
FLITCROFT RM
DAVID JPR
HOUSTON PA
BUTTON CC
Citation: Rm. Flitcroft et al., AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1207-1212
Authors:
LYE BC
HOUSTON PA
YOW HK
BUTTON CC
Citation: Bc. Lye et al., GAINP ALGAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ZERO CONDUCTION-BAND SPIKE AT THE COLLECTOR/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2417-2421
Authors:
NG CMS
HOUSTON PA
YOW HK
Citation: Cms. Ng et al., ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF CURRENT GAIN IN HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 17-24
Authors:
PLIMMER SA
DAVID JPR
HERBERT DC
LEE TW
REES GJ
HOUSTON PA
GREY R
ROBSON PN
HIGGS AW
WIGHT DR
Citation: Sa. Plimmer et al., INVESTIGATION OF IMPACT IONIZATION IN THIN GAAS DIODES, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1066-1072
Authors:
YOW HK
HOUSTON PA
NG CMS
BUTTON C
ROBERTS JS
Citation: Hk. Yow et al., HIGH-TEMPERATURE DC CHARACTERISTICS OF ALXGA0.52-XIN0.48P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 2-7
Authors:
LYE BC
YOW HK
HOUSTON PA
BUTTON CC
Citation: Bc. Lye et al., ELECTRON-MOBILITY ENHANCEMENT IN HEAVILY-DOPED GAAS-C HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 32(25), 1996, pp. 2351-2352
Authors:
HITCHENS LJ
HOUSTON PA
HOPKINSON M
REES GJ
Citation: Lj. Hitchens et al., ENHANCED MOBILITY PIEZOELECTRIC ALINAS INGAAS QUANTUM-WELL STRUCTURESON (111)B INP SUBSTRATES/, Electronics Letters, 31(25), 1995, pp. 2215-2216
Authors:
YOW HK
HOUSTON PA
HOPKINSON M
Citation: Hk. Yow et al., CONDUCTION-BAND DISCONTINUITIES IN GA0.5IN0.5P-ALXGA0.5-XIN0.5P HETEROJUNCTIONS MEASURED BY INTERNAL PHOTOEMISSION, Applied physics letters, 66(21), 1995, pp. 2852-2854
Authors:
HOUSTON PA
YANG YF
JOHNSON MR
HOPKINSON M
Citation: Pa. Houston et al., MAGNETIC-FIELD EFFECTS ON INP INGAAS QUASI-BALLISTIC HETEROJUNCTION BIPOLAR-TRANSISTORS, Semiconductor science and technology, 9(5), 1994, pp. 1153-1155
Authors:
YOW HK
HOUSTON PA
BUTTON CC
LEE TW
ROBERTS JS
Citation: Hk. Yow et al., HETEROJUNCTION BIPOLAR-TRANSISTORS IN ALGAINP GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of applied physics, 76(12), 1994, pp. 8135-8141
Authors:
YOW HK
LEE TW
HOUSTON PA
LEE HY
BUTTON CC
ROBERTS JS
Citation: Hk. Yow et al., DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS USING ALGAINP GAAS/GAINP/, Electronics Letters, 30(2), 1994, pp. 167-169
Authors:
LEE TW
HOUSTON PA
Citation: Tw. Lee et Pa. Houston, GENERALIZED ANALYTICAL TRANSPORT MODELING OF THE DC CHARACTERISTICS OF HETEROJUNCTION BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1390-1397
Authors:
LEE TW
HOUSTON PA
KUMAR R
HILL G
HOPKINSON M
Citation: Tw. Lee et al., ASYMMETRIC CHARACTERISTICS OF INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 7(3), 1992, pp. 425-428
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