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Results: 1-25 | 26-50 | 51-67
Results: 1-25/67
INTERNAL-STRESS AND MICROSTRUCTURE OF SIC REINFORCED ALUMINUM-ALLOY-2014
Authors: WEILAND A HULTMAN L WAHLSTROM U PERSSON C JOHANNESSON T
Citation: A. Weiland et al., INTERNAL-STRESS AND MICROSTRUCTURE OF SIC REINFORCED ALUMINUM-ALLOY-2014, Acta materialia, 46(15), 1998, pp. 5271-5281
DAMAGE-FREE CLEANING OF SI(001) USING GLANCING-ANGLE ION-BOMBARDMENT
Authors: LABANDA JGC BARNETT SA HULTMAN L
Citation: Jgc. Labanda et al., DAMAGE-FREE CLEANING OF SI(001) USING GLANCING-ANGLE ION-BOMBARDMENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1885-1890
TEXTURE EVOLUTION IN SI SIC LAYERED STRUCTURES DEPOSITED ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION/
Authors: BJORKETUN LO HULTMAN L KORDINA O SUNDGREN JE
Citation: Lo. Bjorketun et al., TEXTURE EVOLUTION IN SI SIC LAYERED STRUCTURES DEPOSITED ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION/, Journal of materials research, 13(9), 1998, pp. 2632-2642
NANOINDENTATION HARDNESS, ABRASIVE WEAR, AND MICROSTRUCTURE OF TIN NBN POLYCRYSTALLINE NANOSTRUCTURED MULTILAYER FILMS GROWN BY REACTIVE MAGNETRON SPUTTERING/
Authors: LJUNGCRANTZ H ENGSTROM C HULTMAN L OLSSON M CHU X WONG MS SPROUL WD
Citation: H. Ljungcrantz et al., NANOINDENTATION HARDNESS, ABRASIVE WEAR, AND MICROSTRUCTURE OF TIN NBN POLYCRYSTALLINE NANOSTRUCTURED MULTILAYER FILMS GROWN BY REACTIVE MAGNETRON SPUTTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3104-3113
BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC
Authors: NORDELL N SCHONER A ROTTNER K PERSSON POA WAHAB Q HULTMAN L LINNARSSON MK OLSSON E
Citation: N. Nordell et al., BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC, Journal of electronic materials, 27(7), 1998, pp. 833-837
GROWTH OF STRAINED SI SI1-YCY/SI1-XGEX STRUCTURES BY MBE/
Authors: JOELSSON KB NI WX POZINA G HULTMAN L HANSSON GV
Citation: Kb. Joelsson et al., GROWTH OF STRAINED SI SI1-YCY/SI1-XGEX STRUCTURES BY MBE/, Vacuum, 49(3), 1998, pp. 185-188
OPTIMIZATION OF GROWTH-CONDITIONS FOR STRAINED SI SI1-YCY STRUCTURES/
Authors: JOELSSON KB NI WX POZINA G HULTMAN L HANSSON GV
Citation: Kb. Joelsson et al., OPTIMIZATION OF GROWTH-CONDITIONS FOR STRAINED SI SI1-YCY STRUCTURES/, Thin solid films, 321, 1998, pp. 15-20
INITIAL GROWTH OF PD ON MGO(001)
Authors: FORNANDER H HULTMAN L BIRCH J SUNDGREN JE
Citation: H. Fornander et al., INITIAL GROWTH OF PD ON MGO(001), Journal of crystal growth, 186(1-2), 1998, pp. 189-202
ENHANCED MECHANICAL HARDNESS IN EPITAXIAL NONISOSTRUCTURAL MO NBN ANDW/NBN SUPERLATTICES/
Authors: MADAN A WANG YY BARNETT SA ENGSTROM C LJUNGCRANTZ H HULTMAN L GRIMSDITCH M
Citation: A. Madan et al., ENHANCED MECHANICAL HARDNESS IN EPITAXIAL NONISOSTRUCTURAL MO NBN ANDW/NBN SUPERLATTICES/, Journal of applied physics, 84(2), 1998, pp. 776-785
GROWTH OF POLY-CRYSTAL AND SINGLE-CRYSTAL SCN ON MGO(001) - ROLE OF LOW-ENERGY N-2(-PROPERTIES() IRRADIATION IN DETERMINING TEXTURE, MICROSTRUCTURE EVOLUTION, AND MECHANICAL)
Authors: GALL D PETROV I HELLGREN N HULTMAN L SUNDGREN JE GREENE JE
Citation: D. Gall et al., GROWTH OF POLY-CRYSTAL AND SINGLE-CRYSTAL SCN ON MGO(001) - ROLE OF LOW-ENERGY N-2(-PROPERTIES() IRRADIATION IN DETERMINING TEXTURE, MICROSTRUCTURE EVOLUTION, AND MECHANICAL), Journal of applied physics, 84(11), 1998, pp. 6034-6041
POROSITY DEPTH PROFILING OF THIN POROUS SILICON LAYERS BY USE OF VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY - A POROSITY GRADED-LAYER
Authors: PETTERSSON LAA HULTMAN L ARWIN H
Citation: Laa. Pettersson et al., POROSITY DEPTH PROFILING OF THIN POROUS SILICON LAYERS BY USE OF VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY - A POROSITY GRADED-LAYER, Applied optics, 37(19), 1998, pp. 4130-4136
PHASE-FORMATION SEQUENCES IN THE SILICON-PHOSPHORUS SYSTEM - DETERMINED BY IN-SITU SYNCHROTRON AND CONVENTIONAL X-RAY-DIFFRACTION MEASUREMENTS AND PREDICTED BY A THEORETICAL-MODEL
Authors: CARLSSON JRA CLEVENGER L MADSEN LD HULTMAN L LI XH JORDANSWEET J LAVOIE C ROY RA CABRAL C MORALES G LUDWIG KL STEPHENSON GB HENTZELL HTG
Citation: Jra. Carlsson et al., PHASE-FORMATION SEQUENCES IN THE SILICON-PHOSPHORUS SYSTEM - DETERMINED BY IN-SITU SYNCHROTRON AND CONVENTIONAL X-RAY-DIFFRACTION MEASUREMENTS AND PREDICTED BY A THEORETICAL-MODEL, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(3), 1997, pp. 363-376
1ST NORTHERN WORKSHOP ON TEM SAMPLE PREPARATION OF THIN-FILMS - INTRODUCTION
Authors: MADSEN L HULTMAN L
Citation: L. Madsen et L. Hultman, 1ST NORTHERN WORKSHOP ON TEM SAMPLE PREPARATION OF THIN-FILMS - INTRODUCTION, Microscopy research and technique, 36(5), 1997, pp. 353-353
CHARACTERIZATION OF THE INDUCED PLASTIC ZONE IN A SINGLE-CRYSTAL TIN(001) FILM BY NANOINDENTATION AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: ODEN M LJUNGCRANTZ M HULTMAN L
Citation: M. Oden et al., CHARACTERIZATION OF THE INDUCED PLASTIC ZONE IN A SINGLE-CRYSTAL TIN(001) FILM BY NANOINDENTATION AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of materials research, 12(8), 1997, pp. 2134-2142
A NEW SILICON PHOSPHIDE, SI12P5 - FORMATION CONDITIONS, STRUCTURE, AND PROPERTIES
Authors: CARLSSON JRA MADSEN LD JOHANSSON MP HULTMAN L LI XH HENTZELL HTG WALLENBERG LR
Citation: Jra. Carlsson et al., A NEW SILICON PHOSPHIDE, SI12P5 - FORMATION CONDITIONS, STRUCTURE, AND PROPERTIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 394-401
GROWTH OF EPITAXIAL FE V(001) SUPERLATTICE FILMS/
Authors: ISBERG P HJORVARSSON B WAPPLING R SVEDBERG EB HULTMAN L
Citation: P. Isberg et al., GROWTH OF EPITAXIAL FE V(001) SUPERLATTICE FILMS/, Vacuum, 48(5), 1997, pp. 483-489
REACTIVE MAGNETRON SPUTTERING OF CNX THIN-FILMS AT DIFFERENT SUBSTRATE BIAS
Authors: ZHENG WT BROITMAN E HELLGREN N XING KZ IVANOV I SJOSTROM H HULTMAN L SUNDGREN JE
Citation: Wt. Zheng et al., REACTIVE MAGNETRON SPUTTERING OF CNX THIN-FILMS AT DIFFERENT SUBSTRATE BIAS, Thin solid films, 308, 1997, pp. 223-227
STRAIN RELAXATION AND THERMAL-STABILITY OF THE 3C-SIC(001) SI(001) INTERFACE - A MOLECULAR-DYNAMICS STUDY/
Authors: CHIRITA V HULTMAN L WALLENBERG LR
Citation: V. Chirita et al., STRAIN RELAXATION AND THERMAL-STABILITY OF THE 3C-SIC(001) SI(001) INTERFACE - A MOLECULAR-DYNAMICS STUDY/, Thin solid films, 294(1-2), 1997, pp. 47-49
INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: BJORKETUN LO HULTMAN L IVANOV IP WAHAB Q SUNDGREN JE
Citation: Lo. Bjorketun et al., INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 182(3-4), 1997, pp. 379-388
HUMAN MONOCLONAL-ANTIBODIES SPECIFIC FOR THE TUMOR-ASSOCIATED THOMSEN-FRIEDENREICH ANTIGEN
Authors: DAHLENBORG K HULTMAN L CARLSSON R JANSSON B
Citation: K. Dahlenborg et al., HUMAN MONOCLONAL-ANTIBODIES SPECIFIC FOR THE TUMOR-ASSOCIATED THOMSEN-FRIEDENREICH ANTIGEN, International journal of cancer, 70(1), 1997, pp. 63-71
INCREASED EXPRESSION OF ENOS IN SKELETAL-MUSCLE AFTER VOLUNTARY EXERCISE IN SPONTANEOUSLY HYPERTENSIVE RATS
Authors: JUNGERSTEN LU CAIDAHL K DELBRO D HULTMAN L JONSDOTTIR I PETERSSON AS
Citation: Lu. Jungersten et al., INCREASED EXPRESSION OF ENOS IN SKELETAL-MUSCLE AFTER VOLUNTARY EXERCISE IN SPONTANEOUSLY HYPERTENSIVE RATS, Circulation, 96(8), 1997, pp. 4213-4213
GROWTH AND ELECTRONIC-PROPERTIES OF EPITAXIAL TIN THIN-FILMS ON 3C-SIC(001) AND 6H-SIC(0001) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING
Authors: HULTMAN L LJUNGCRANTZ H HALLIN C JANZEN E SUNDGREN JE PECZ B WALLENBERG LR
Citation: L. Hultman et al., GROWTH AND ELECTRONIC-PROPERTIES OF EPITAXIAL TIN THIN-FILMS ON 3C-SIC(001) AND 6H-SIC(0001) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING, Journal of materials research, 11(10), 1996, pp. 2458-2462
LOW-TEMPERATURE DEPOSITION OF CUBIC BN-C FILMS BY UNBALANCED DIRECT-CURRENT MAGNETRON SPUTTERING OF A B4C TARGET
Authors: JOHANSSON MP IVANOV I HULTMAN L MUNGER EP SCHUTZE A
Citation: Mp. Johansson et al., LOW-TEMPERATURE DEPOSITION OF CUBIC BN-C FILMS BY UNBALANCED DIRECT-CURRENT MAGNETRON SPUTTERING OF A B4C TARGET, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3100-3107
STRUCTURAL AND MECHANICAL-PROPERTIES OF CARBON NITRIDE CNX ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) FILMS
Authors: SJOSTROM H HULTMAN L SUNDGREN JE HAINSWORTH SV PAGE TF THEUNISSEN GSAM
Citation: H. Sjostrom et al., STRUCTURAL AND MECHANICAL-PROPERTIES OF CARBON NITRIDE CNX ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(1), 1996, pp. 56-62
HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/
Authors: WAHAB Q KARLSTEEN M NUR O HULTMAN L WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/, Journal of electronic materials, 25(9), 1996, pp. 1495-1500
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