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Results: 1-25/43
Authors:
CHEN GS
BOOTHROYD CB
HUMPHREYS CJ
Citation: Gs. Chen et al., ELECTRON-BEAM-INDUCED DAMAGE IN AMORPHOUS SIO2 AND THE DIRECT FABRICATION OF SILICON NANOSTRUCTURES, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 78(2), 1998, pp. 491-506
Authors:
NISHINO Y
INKSON BJ
OGAWA T
HUMPHREYS CJ
Citation: Y. Nishino et al., EFFECT OF MOLYBDENUM SUBSTITUTION ON PHASE-STABILITY AND HIGH-TEMPERATURE STRENGTH OF FE3AL ALLOYS, Philosophical magazine letters, 78(2), 1998, pp. 97-103
Authors:
YONENAGA I
BROWN PD
HUMPHREYS CJ
Citation: I. Yonenaga et al., CLIMB OF DISLOCATIONS IN GAAS BY IRRADIATION, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 148-150
Authors:
TRICKER DM
BROWN PD
CHENG TS
FOXON CT
HUMPHREYS CJ
Citation: Dm. Tricker et al., A TEM STUDY OF SUBSTRATE PITTING DURING THE MBE GROWTH OF GAN ON GAASAND GAP SUBSTRATES, Applied surface science, 123, 1998, pp. 22-27
Authors:
DUDAREV SL
BOTTON GA
SAVRASOV SY
HUMPHREYS CJ
SUTTON AP
Citation: Sl. Dudarev et al., ELECTRON-ENERGY-LOSS SPECTRA AND THE STRUCTURAL STABILITY OF NICKEL-OXIDE - AN LSDA+U STUDY, Physical review. B, Condensed matter, 57(3), 1998, pp. 1505-1509
Authors:
HUMPHREYS CJ
Citation: Cj. Humphreys, THE NUMBER OF PEOPLE IN THE EXODUS FROM EGYPT - DECODING MATHEMATICALLY THE VERY LARGE NUMBERS IN NUMBERS-I AND NUMBERS-XXVI, Vetus Testamentum, 48(2), 1998, pp. 196-213
Authors:
TATSUOKA H
ISAJI K
SUGIURA K
KUWABARA H
BROWN PD
XIN Y
HUMPHREYS CJ
Citation: H. Tatsuoka et al., INTERFACIAL REACTION AND DEFECT MICROSTRUCTURE OF EPITAXIAL MNSB SI(111) GROWN BY HOT-WALL EPITAXY/, Journal of applied physics, 83(10), 1998, pp. 5504-5508
Authors:
LIU CP
DUNINBORKOWSKI RE
BOOTHROYD CB
BROWN PD
HUMPHREYS CJ
Citation: Cp. Liu et al., CHARACTERIZATION OF ULTRATHIN DOPING LAYERS IN SEMICONDUCTORS, MICROSCOPY AND MICROANALYSIS, 3(4), 1997, pp. 352-363
Authors:
CHEN GS
HUMPHREYS CJ
Citation: Gs. Chen et Cj. Humphreys, INVESTIGATION OF THE PROXIMITY EFFECT IN AMORPHOUS ALF3 ELECTRON-BEAMRESISTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1954-1960
Authors:
BOTTON GA
HUMPHREYS CJ
Citation: Ga. Botton et Cj. Humphreys, ANALYSIS OF EELS NEAR-EDGE STRUCTURES TO STUDY THE BONDING CHARACTER IN INTERMETALLIC ALLOYS, Micron, 28(4), 1997, pp. 313-319
Authors:
WIEZOREK JMK
HUMPHREYS CJ
FRASER HL
Citation: Jmk. Wiezorek et al., DETERMINING DIRECTLY FROM EXPERIMENT THE MAGNITUDE OF THE BURGERS VECTOR OF GLISSILE [C]-COMPONENT DISLOCATIONS IN TI3AL, Philosophical magazine letters, 75(5), 1997, pp. 281-289
Authors:
KAISER U
BROWN PD
JINSCHEK J
ADAMIK M
HUMPHREYS CJ
KARMANN S
FISSEL A
PFENNIGHAUS K
RICHTER W
Citation: U. Kaiser et al., MICROSTRUCTURAL INVESTIGATIONS OF SILICON-CARBIDE AND ALUMINUM NITRIDE MBE LAYERS ON SILICON SUBSTRATES, European journal of cell biology, 74, 1997, pp. 120-120
Authors:
BOTTON GA
BURNELL G
HUMPHREYS CJ
YADAV T
WITHERS JC
Citation: Ga. Botton et al., MICROSTRUCTURAL AND ELECTRON SPECTROSCOPIC CHARACTERIZATION OF CARBONNANOSTRUCTURES AND NANOTUBES PRODUCED USING MULTIMETAL CATALYSTS, Journal of physics and chemistry of solids, 58(7), 1997, pp. 1091-1102
Authors:
XIN Y
BROWN PD
DUNINBORKOWSKI RE
HUMPHREYS CJ
CHENG TS
FOXON CT
Citation: Y. Xin et al., MICROSTRUCTURAL CHARACTERIZATION OF GAN(AS) FILMS GROWN ON (001)GAP BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 171(3-4), 1997, pp. 321-332
Authors:
WALTHER T
HUMPHREYS CJ
CULLIS AG
Citation: T. Walther et al., OBSERVATION OF VERTICAL AND LATERAL GE SEGREGATION IN THIN UNDULATINGSIGE LAYERS ON SI BY ELECTRON-ENERGY-LOSS SPECTROSCOPY, Applied physics letters, 71(6), 1997, pp. 809-811
Authors:
XIN Y
BROWN PD
HUMPHREYS CJ
CHENG TS
FOXON CT
Citation: Y. Xin et al., DOMAIN BOUNDARIES IN EPITAXIAL WURTZITE GAN, Applied physics letters, 70(10), 1997, pp. 1308-1310
Authors:
INKSON BJ
HUMPHREYS CJ
Citation: Bj. Inkson et Cj. Humphreys, HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF THE JUNCTION BETWEEN A COHERENT (111) AND AN INCOHERENT (1(2)OVER-BAR-1) TWIN BOUNDARY IN TIAL, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 73(6), 1996, pp. 1647-1661
Authors:
INKSON BJ
HUMPHREYS CJ
Citation: Bj. Inkson et Cj. Humphreys, DISLOCATIONS AT 120-DEGREES ORDER INTERFACES IN TIAL, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 73(5), 1996, pp. 1333-1345
Authors:
BOTTON GA
GUO GY
TEMMERMAN WM
HUMPHREYS CJ
Citation: Ga. Botton et al., EXPERIMENTAL AND THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF FE,CO, AND NI ALUMINIDES WITH THE B2 STRUCTURE, Physical review. B, Condensed matter, 54(3), 1996, pp. 1682-1691
Authors:
MOODIE AF
ETHERIDGE J
HUMPHREYS CJ
Citation: Af. Moodie et al., THE SYMMETRY OF 3-BEAM SCATTERING EQUATIONS - INVERSION OF 3-BEAM DIFFRACTION PATTERNS FROM CENTROSYMMETRIC CRYSTALS, Acta crystallographica. Section A, Foundations of crystallography, 52, 1996, pp. 596-605
Authors:
CHEN Q
KNOWLES KM
HUMPHREYS CJ
WU XF
Citation: Q. Chen et al., ATOM POSITIONS IN THE R-PHASE UNIT-CELL IN TINI SHAPE-MEMORY ALLOY, Journal of Materials Science, 31(16), 1996, pp. 4227-4231
Authors:
BROWN PD
HUMPHREYS CJ
Citation: Pd. Brown et Cj. Humphreys, SCANNING-TRANSMISSION ELECTRON-BEAM-INDUCED CONDUCTIVITY INVESTIGATION OF A SI SI1-XGEX/SI HETEROSTRUCTURE/, Journal of applied physics, 80(4), 1996, pp. 2527-2529
Authors:
LOGINOV YY
BROWN PD
HUMPHREYS CJ
Citation: Yy. Loginov et al., DEFECT FORMATION IN ZNTE AND (CD,ZN)TE EPITAXIAL LAYERS GROWN ON (001)GAAS, Inorganic materials, 32(1), 1996, pp. 22-25
Authors:
CHEN GS
BOOTHROYD CB
HUMPHREYS CJ
Citation: Gs. Chen et al., ELECTRON-BEAM-INDUCED CRYSTALLIZATION TRANSITION IN SELF-DEVELOPING AMORPHOUS ALF3 RESISTS, Applied physics letters, 69(2), 1996, pp. 170-172
Authors:
WIEZOREK JMK
HUMPHREYS CJ
Citation: Jmk. Wiezorek et Cj. Humphreys, ON THE HIERARCHY OF PLANAR FAULT ENERGIES IN TIAL, Scripta metallurgica et materialia, 33(3), 1995, pp. 451-458