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Results: 1-17 |
Results: 17
Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors
Authors: Wohl, G Kasper, E Hackbarth, T Kibbel, H Klose, M Ernst, F
Citation: G. Wohl et al., Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates forhetero-CMOS transistors, J MAT S-M E, 12(4-6), 2001, pp. 235-240
Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication
Authors: Hollander, B Lenk, S Mantl, S Trinkaus, H Kirch, D Luysberg, M Hackbarth, T Herzog, HJ Fichtner, PFP
Citation: B. Hollander et al., Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures afterhydrogen or helium ion implantation for virtual substrate fabrication, NUCL INST B, 175, 2001, pp. 357-367
0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs
Authors: Enciso, M Aniel, F Crozat, P Adde, R Zeuner, M Fox, A Hackbarth, T
Citation: M. Enciso et al., 0.3 dB minimum noise figure at 2.5 GHz of 0.13 mu m Si/Si0.58Ge0.42 n-MODFETs, ELECTR LETT, 37(17), 2001, pp. 1089-1090
Fast deposition process for graded SiGe buffer layers
Authors: von Kanel, H Rosenblad, C Kummer, M Muller, E Graf, T Hackbarth, T
Citation: H. Von Kanel et al., Fast deposition process for graded SiGe buffer layers, JPN J A P 1, 39(4B), 2000, pp. 2050-2053
Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching
Authors: Wieser, U Iamundo, D Kunze, U Hackbarth, T Konig, U
Citation: U. Wieser et al., Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching, SEMIC SCI T, 15(8), 2000, pp. 862-867
SiGe-based FETs: buffer issues and device results
Authors: Herzog, HJ Hackbarth, T Hock, G Zeuner, M Konig, U
Citation: Hj. Herzog et al., SiGe-based FETs: buffer issues and device results, THIN SOL FI, 380(1-2), 2000, pp. 36-41
Alternatives to thick MBE-grown relaxed SiGe buffers
Authors: Hackbarth, T Herzog, HJ Zeuner, M Hock, G Fitzgerald, BA Bulsara, M Rosenblad, C von Kanel, H
Citation: T. Hackbarth et al., Alternatives to thick MBE-grown relaxed SiGe buffers, THIN SOL FI, 369(1-2), 2000, pp. 148-151
Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's
Authors: Aniel, F Zerounian, N Adde, R Zeuner, M Hackbarth, T Konig, U
Citation: F. Aniel et al., Low temperature analysis of 0.25 mu m T-gate strained Si/Si0.55Ge0.45 N-MODFET's, IEEE DEVICE, 47(7), 2000, pp. 1477-1483
0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max)
Authors: Hock, G Hackbarth, T Kab, N Herzog, HJ Enciso, M Aniel, F Crozat, P Adde, R Kohn, E Konig, U
Citation: G. Hock et al., 0.1 mu m gate length p-type Ge/Si0.4Ge0.6 MODFET with 135GHz f(max), ELECTR LETT, 36(16), 2000, pp. 1428-1429
Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures
Authors: Trinkaus, H Hollander, B Rongen, S Mantl, S Herzog, HJ Kuchenbecker, J Hackbarth, T
Citation: H. Trinkaus et al., Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures, APPL PHYS L, 76(24), 2000, pp. 3552-3554
High-frequency SiGe-n-MODFET for microwave applications
Authors: Zeuner, M Hackbarth, T Hock, G Behammer, D Konig, U
Citation: M. Zeuner et al., High-frequency SiGe-n-MODFET for microwave applications, IEEE MICR G, 9(10), 1999, pp. 410-412
Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation
Authors: Hollander, B Mantl, S Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: B. Hollander et al., Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation, NUCL INST B, 148(1-4), 1999, pp. 200-210
Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation
Authors: Mantl, S Hollander, B Liedtke, R Mesters, S Herzog, HJ Kibbel, H Hackbarth, T
Citation: S. Mantl et al., Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogenimplantation, NUCL INST B, 147(1-4), 1999, pp. 29-34
n- and p-type SiGe HFETs and circuits
Authors: Konig, U Zeuner, M Hock, G Hackbarth, T Gluck, M Ostermann, T Saxarra, M
Citation: U. Konig et al., n- and p-type SiGe HFETs and circuits, SOL ST ELEC, 43(8), 1999, pp. 1383-1388
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
Authors: Hackbarth, T Hoeck, G Herzog, HJ Zeuner, M
Citation: T. Hackbarth et al., Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors, J CRYST GR, 202, 1999, pp. 734-738
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications
Authors: Hock, G Gluck, M Hackbarth, T Herzog, HJ Kohn, E
Citation: G. Hock et al., Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications, THIN SOL FI, 336(1-2), 1998, pp. 141-144
Comparison of lateral and vertical Si-MOSFETs with ultra short channels
Authors: Behammer, D Zeuner, M Hackbarth, T Herzog, J Schafer, M Grabolla, T
Citation: D. Behammer et al., Comparison of lateral and vertical Si-MOSFETs with ultra short channels, THIN SOL FI, 336(1-2), 1998, pp. 313-318
Risultati: 1-17 |