Authors:
Ivanov, MS
Vandromme, D
Fomin, VM
Kudryavtsev, AN
Hadjadj, A
Khotyanovsky, DV
Citation: Ms. Ivanov et al., Transition between regular and Mach reflection of shock waves: new numerical and experimental results, SHOCK WAVES, 11(3), 2001, pp. 199-207
Authors:
Hadjadj, A
Beorchia, A
Boufendi, L
Huet, S
Cabarrocas, PRI
Citation: A. Hadjadj et al., Crystallization of nanostructured silicon films deposited under a low-pressure argon-silane pulsed-glow discharge: Correlation with the plasma duration, J VAC SCI A, 19(1), 2001, pp. 124-129
Authors:
Hadjadj, A
Beorchia, A
Cabarrocas, PRI
Boufendi, L
Huet, S
Bubendorff, JL
Citation: A. Hadjadj et al., Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films, J PHYS D, 34(5), 2001, pp. 690-699
Citation: A. Hadjadj et al., Fowler-Nordheim conduction in polysilicon (n(+))-oxide-silicon (p) structures: Limit of the classical treatment in the barrier height determination, J APPL PHYS, 89(12), 2001, pp. 7994-8001
Authors:
Hadjadj, A
Boufendi, L
Huet, S
Schelz, S
Cabarrocas, PRI
Estrade-Szwarckopf, H
Rousseau, B
Citation: A. Hadjadj et al., Role of the surface roughness in laser induced crystallization of nanostructured silicon films, J VAC SCI A, 18(2), 2000, pp. 529-535
Citation: G. Salace et al., The image force effect on the barrier height in MOS structures: correlation of the corrected barrier height with temperature and the oxide thickness, MICROEL REL, 40(4-5), 2000, pp. 763-766
Citation: A. Hadjadj et M. El Kyal, Effect of two sinusoidal protuberances on natural convection in a verticalconcentric annulus, NUM HEAT A, 36(3), 1999, pp. 273-289
Authors:
Salace, G
Hadjadj, A
Petit, C
Jourdain, M
Citation: G. Salace et al., Temperature dependence of the electron affinity difference between Si and SiO2 in polysilicon (n(+))-oxide-silicon (p) structures: Effect of the oxide thickness, J APPL PHYS, 85(11), 1999, pp. 7768-7773