Citation: K. Yang et al., Monolithic oxide-confined multiple-wavelength vertical-cavity surface-emitting laser arrays with a 57-nm wavelength grading range using an oxidized upper Bragg mirror, IEEE PHOTON, 12(4), 2000, pp. 377-379
Citation: Xd. Huang et al., Very low threshold current density room temperature continuous-wave lasingfrom a single-layer InAs quantum-dot laser, IEEE PHOTON, 12(3), 2000, pp. 227-229
Citation: K. Yang et al., Efficient double intracavity-contacted vertical-cavity surface-emitting lasers with very low-threshold and low-power dissipation designed for cryogenic applications, IEEE PHOTON, 12(2), 2000, pp. 113-115
Citation: K. Yang et al., Efficient continuous-wave lasing operation of a narrow-stripe oxide-confined GaInNAs-GaAs multiquantum-well laser grown by MOCVD, IEEE PHOTON, 12(1), 2000, pp. 7-9
Authors:
Hains, CP
Li, NY
Yang, K
Huang, XD
Cheng, JL
Citation: Cp. Hains et al., Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD, IEEE PHOTON, 11(10), 1999, pp. 1208-1210
Authors:
Li, NY
Hains, CP
Yang, K
Lu, J
Cheng, J
Li, PW
Citation: Ny. Li et al., Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 mu m GaInNAs three-quantum-well laser diodes, APPL PHYS L, 75(8), 1999, pp. 1051-1053