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Results:
1-8
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Results: 8
Authors:
Rastogi, AK
Hardikar, S
Citation: Ak. Rastogi et S. Hardikar, Attenuation characteristics and sensitivity analysis for coplanar waveguide, INT J INFRA, 22(5), 2001, pp. 703-714
Authors:
Hardikar, S
Xu, YZ
De Souza, MM
Narayanan, EMS
Citation: S. Hardikar et al., A segmented anode, npn controlled lateral insulated gate bipolar transistor, SOL ST ELEC, 45(7), 2001, pp. 1055-1058
Authors:
Hardikar, S
Xu, YZ
Cao, GJ
De Souza, MM
Narayanan, EMS
Citation: S. Hardikar et al., An investigation into the mechanisms limiting the safe operating area of aLIGBT in DI and DELDI technologies, MICROELEC J, 32(2), 2001, pp. 121-126
Authors:
Hardikar, S
Cao, G
Xu, Y
De Souza, MM
Narayanan, EMS
Citation: S. Hardikar et al., A local charge control technique to improve the forward bias safe operating area of LIGBT, SOL ST ELEC, 44(7), 2000, pp. 1213-1218
Authors:
Hardikar, S
Xu, YZ
De Souza, MM
Narayanan, EMS
Citation: S. Hardikar et al., 1200 V fully implanted JI technology, ELECTR LETT, 36(18), 2000, pp. 1587-1589
Authors:
Hardikar, S
Hudait, MK
Modak, P
Krupanidhi, SB
Padha, N
Citation: S. Hardikar et al., Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodesat low temperatures, APPL PHYS A, 68(1), 1999, pp. 49-55
Authors:
Spulber, O
Narayanan, EMS
Hardikar, S
De Souza, MM
Sweet, M
Bose, SC
Citation: O. Spulber et al., A novel gate geometry for the IGBT: The trench planar insulated gate bipolar transistor (TPIGBT), IEEE ELEC D, 20(11), 1999, pp. 580-582
Authors:
Xu, YZ
Hardikar, S
DeSouza, MM
Cao, GJ
Narayanan, EMS
Citation: Yz. Xu et al., Design of novel high side power MOSFET based on HVIC process, ELECTR LETT, 35(21), 1999, pp. 1880-1881
Risultati:
1-8
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