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Results:
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Results: 18
Authors:
Schubert, M
Kasic, A
Sik, J
Einfeldt, S
Hommel, D
Harle, V
Off, J
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 178-181
Authors:
Stath, N
Harle, V
Wagner, J
Citation: N. Stath et al., The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides, MAT SCI E B, 80(1-3), 2001, pp. 224-231
Authors:
Weimar, A
Lell, A
Bruderl, G
Bader, S
Harle, V
Citation: A. Weimar et al., Investigation of low-resistance metal contacts on p-type GaN using the linear and circular transmission line method, PHYS ST S-A, 183(1), 2001, pp. 169-175
Authors:
Thomazeau, C
Geantet, C
Lacroix, M
Harle, V
Benazeth, S
Marhic, C
Danot, M
Citation: C. Thomazeau et al., Two cation disulfide layers in the WxMo((1-x))S-2 lamellar solid solution, J SOL ST CH, 160(1), 2001, pp. 147-155
Authors:
Zehnder, U
Weimar, A
Strauss, U
Fehrer, M
Hahn, B
Lugauer, HJ
Harle, V
Citation: U. Zehnder et al., Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates, J CRYST GR, 230(3-4), 2001, pp. 497-502
Authors:
Baur, J
Strauss, U
Bruederl, G
Eisert, D
Oberschmid, R
Hahn, B
Lugauer, HJ
Bader, S
Zehnder, U
Fehrer, M
Harle, V
Citation: J. Baur et al., Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC, J CRYST GR, 230(3-4), 2001, pp. 507-511
Authors:
Schwegler, V
Schad, SS
Scherer, M
Kamp, M
Ulu, G
Emsley, M
Unlu, MS
Lell, A
Bader, S
Hahne, B
Lugauer, HJ
Kuhn, F
Weimar, A
Harle, V
Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516
Authors:
Hangleiter, A
Heppel, S
Off, J
Kuhn, B
Scholz, F
Bader, S
Hahn, B
Harle, V
Citation: A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526
Authors:
Vehse, M
Michler, R
Lange, O
Rowe, M
Gutowski, J
Bader, S
Lugauer, HJ
Bruderl, G
Weimar, A
Lell, A
Harle, V
Citation: M. Vehse et al., Optical gain and saturation in nitride-based laser structures, APPL PHYS L, 79(12), 2001, pp. 1763-1765
Authors:
Schubert, M
Kasic, A
Tiwald, TE
Woollam, JA
Harle, V
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and Raman spectroscopy, MRS I J N S, 5, 2000, pp. NIL_610-NIL_615
Authors:
Harle, V
Vrinat, M
Scharff, JP
Durand, B
Deloume, JP
Citation: V. Harle et al., Catalysis assisted characterizations of nanosized TiO2-Al2O3 mixtures obtained in molten alkali metal nitrates - Effect of the metal precursor, APP CATAL A, 196(2), 2000, pp. 261-269
Authors:
Fischer, L
Harle, V
Kasztelan, S
de la Caillerie, JBD
Citation: L. Fischer et al., Identification of fluorine sites at the surface of fluorinated gamma-alumina by two-dimensional MAS NMR, SOL ST NUCL, 16(1-2), 2000, pp. 85-91
Authors:
Harle, V
Hahn, B
Lugauer, HJ
Bader, S
Bruderl, G
Baur, J
Eisert, D
Strauss, U
Zehnder, U
Lell, A
Hiller, N
Citation: V. Harle et al., GaN-based LEDs and lasers on SiC, PHYS ST S-A, 180(1), 2000, pp. 5-13
Authors:
Bader, S
Hahn, B
Lugauer, HJ
Lell, A
Weimar, A
Bruderl, G
Baur, J
Eisert, D
Scheubeck, M
Heppel, S
Hangleiter, A
Harle, V
Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182
Authors:
Michler, P
Lange, O
Vehse, M
Gutowski, J
Bader, S
Hahn, B
Lugauer, HJ
Harle, V
Citation: P. Michler et al., Gain saturation in (In,Ga)N/GaN/(Al,Ga)N laser structures, PHYS ST S-A, 180(1), 2000, pp. 391-396
Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy
Authors:
Shao, J
Haase, D
Dornen, A
Harle, V
Scholz, F
Citation: J. Shao et al., Tensile strained InGaAs/InP multiple-quantum-well structures studied by magneto-optical spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4303-4307
Authors:
Harle, V
Hiller, N
Kugler, S
Hahn, B
Stath, N
Citation: V. Harle et al., Industrial aspects of GaN/SiC blue light emitting diodes in Europe, MAT SCI E B, 61-2, 1999, pp. 310-313
Authors:
Bozdog, C
Przybylinska, H
Watkins, GD
Harle, V
Scholz, F
Mayer, M
Kamp, M
Molnar, RJ
Wickenden, AE
Koleske, DD
Henry, RL
Citation: C. Bozdog et al., Optical detection of electron paramagnetic resonance in electron-irradiated GaN, PHYS REV B, 59(19), 1999, pp. 12479-12486
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