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Results: 1-25/47
Authors:
Ichizli, VM
Droba, M
Mutamba, K
Sigurdardottir, A
Hartnagel, HL
Citation: Vm. Ichizli et al., Comparative investigation of interface effect on transmission function of electrons and holes in InAs/AlSb-based heterostructures, J VAC SCI B, 19(5), 2001, pp. 1866-1869
Authors:
Sarua, A
Monecke, J
Irmer, G
Tiginyanu, IM
Gartner, G
Hartnagel, HL
Citation: A. Sarua et al., Frohlich modes in porous III-V semiconductors, J PHYS-COND, 13(31), 2001, pp. 6687-6706
Authors:
Yilmazoglu, O
Brandt, M
Sigmund, J
Genc, E
Hartnagel, HL
Citation: O. Yilmazoglu et al., Integrated InAs/GaSb 3D magnetic field sensors for "the intelligent tire", SENS ACTU-A, 94(1-2), 2001, pp. 59-63
Authors:
Saglam, M
Bozzi, M
Megej, A
Rodriguez-Girones, M
Perregrini, L
Hartnagel, HL
Citation: M. Saglam et al., Characterization of heterostructure-barrier-varactors for frequency multiplication, INT J INFRA, 22(3), 2001, pp. 429-438
Authors:
Sydlo, C
Mottet, B
Ganis, H
Hartnagel, HL
Krozer, V
Delage, SL
Cassette, S
Chartier, E
Floriot, D
Citation: C. Sydlo et al., Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaPHBT, MICROEL REL, 41(9-10), 2001, pp. 1567-1571
Authors:
Sigmund, J
Saglam, M
Vogt, A
Hartnagel, HL
Buschmann, V
Wieder, T
Fuess, H
Citation: J. Sigmund et al., Microstructure analysis of ohmic contacts on MBE grown n-GaSb and investigation of sub-micron contacts, J CRYST GR, 227, 2001, pp. 625-629
Authors:
Stevens-Kalceff, MA
Tiginyanu, IM
Langa, S
Foll, H
Hartnagel, HL
Citation: Ma. Stevens-kalceff et al., Correlation between morphology and cathodoluminescence in porous GaP, J APPL PHYS, 89(5), 2001, pp. 2560-2565
Authors:
Ichizli, V
Hartnagel, HL
Mimura, H
Shimawaki, H
Yokoo, K
Citation: V. Ichizli et al., Field emission from porous (100) GaP with modified morphology, APPL PHYS L, 79(24), 2001, pp. 4016-4018
Authors:
Pfeiffer, J
Peerlings, J
Riemenschneider, R
Genovese, R
Aziz, M
Goutain, E
Kunzel, H
Gortz, W
Bohm, G
Amann, MC
Meissner, P
Hartnagel, HL
Citation: J. Pfeiffer et al., InAlGaAs bulk micromachined tunable Fabry-Perot filter for dense WDM systems, MAT SC S PR, 3(5-6), 2000, pp. 409-412
Authors:
Tiginyanu, IM
Kravetsky, IV
Pavlidis, D
Eisenbach, A
Hildebrandt, R
Marowsky, G
Hartnagel, HL
Citation: Im. Tiginyanu et al., Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire, MRS I J N S, 5, 2000, pp. NIL_661-NIL_666
Authors:
Ichizli, V
Riemenschneider, R
Hartnagel, HL
Citation: V. Ichizli et al., Scanning tunneling spectroscopy characterization of As+ implanted InP (100) single crystals, J VAC SCI B, 18(5), 2000, pp. 2590-2592
Authors:
Ichizli, VM
Mutamba, K
Droba, M
Sigurdardottir, A
Hartnagel, HL
Citation: Vm. Ichizli et al., Interface tuning of the InAs/AlSb heterostructure-based quantum wells, J VAC SCI B, 18(4), 2000, pp. 2279-2283
Authors:
Hartnagel, HL
Koops, HWP
Dziuban, J
Citation: Hl. Hartnagel et al., Papers from the 12th International Vacuum Microelectronics Conference - Preface, J VAC SCI B, 18(2), 2000, pp. 883-883
Authors:
Megej, A
Beilenhoff, K
Hartnagel, HL
Citation: A. Megej et al., Fully monolithically integrated feedback voltage controlled oscillator, IEEE MICR G, 10(6), 2000, pp. 239-241
Authors:
Mutamba, K
Sigurdardottir, A
Hartnagel, HL
Citation: K. Mutamba et al., Concept of nanometric high density charge coupled devices, ANALOG IN C, 24(1), 2000, pp. 37-40
Authors:
Mottonen, VS
Piironen, P
Zhang, J
Raisanen, AV
Lin, CI
Simon, A
Hartnagel, HL
Citation: Vs. Mottonen et al., Subharmonic waveguide mixer at 215 GHz utilizing quasivertical Schottky diodes, MICROW OPT, 27(2), 2000, pp. 93-97
Authors:
Miranda, JM
Lin, CI
Brandt, M
Rodriguez-Girones, M
Hartnagel, HL
Sebastian, JL
Citation: Jm. Miranda et al., Influence of reactive ion etching on the microwave trap noise generated inPt/n-GaAs Schottky diode interfaces, IEEE ELEC D, 21(11), 2000, pp. 515-517
Authors:
Tiginyanu, IM
Kravetsky, IV
Marowsky, G
Monecke, J
Hartnagel, HL
Citation: Im. Tiginyanu et al., Design of new nonlinear optical materials based on porous III-V compounds, PHYS ST S-B, 221(1), 2000, pp. 557-560
Authors:
Ressel, P
Hao, PH
Park, MH
Yang, ZC
Wang, LC
Osterle, W
Kurpas, P
Richter, E
Kuphal, E
Hartnagel, HL
Citation: P. Ressel et al., Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties, J ELEC MAT, 29(7), 2000, pp. 964-972
Authors:
Hartnagel, HL
Lin, CI
Citation: Hl. Hartnagel et Ci. Lin, Passivation of compound-semiconductor surfaces for low-noise terahertz devices, VACUUM, 57(2), 2000, pp. 179-188
Authors:
Sarua, A
Gartner, G
Irmer, G
Monecke, J
Tiginyanu, IM
Hartnagel, HL
Citation: A. Sarua et al., Raman and IR-reflectance spectra of porous III-V semiconductor structures, PHYS ST S-A, 182(1), 2000, pp. 207-211
Authors:
Sydlo, C
Mottet, B
Schussler, M
Brandt, M
Hartnagel, HL
Citation: C. Sydlo et al., A method for HBT process control and defect detection using pulsed electrical stress, MICROEL REL, 40(8-10), 2000, pp. 1449-1453
Authors:
Manca, JV
Wondrak, W
Schaper, W
Croes, K
De Ceuninck, W
Dieval, B
Hartnagel, HL
D'Olieslaeger, M
De Schepper, L
Citation: Jv. Manca et al., Reliability aspects of high temperature power MOSFETs, MICROEL REL, 40(8-10), 2000, pp. 1679-1682
Authors:
Schussler, M
Mottet, B
Sydlo, C
Krozer, V
Hartnagel, HL
Jakoby, R
Citation: M. Schussler et al., Model for the decrease in HBT collector current under DC stress based on recombination enhanced defect reactions, MICROEL REL, 40(8-10), 2000, pp. 1733-1738
Authors:
Berberich, S
Godignon, P
Morvan, E
Fonseca, L
Millan, J
Hartnagel, HL
Citation: S. Berberich et al., Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC, MICROEL REL, 40(4-5), 2000, pp. 833-836