Authors: Dodd, PE Shaneyfelt, MR Walsh, DS Schwank, JR Hash, GL Loemker, RA Draper, BL Winokur, PS

Citation: Pe. Dodd et al., Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE NUCL S, 47(6), 2000, pp. 2165-2174

Authors: Shaneyfelt, MR Schwank, JR Witczak, SC Fleetwood, DM Pease, RL Winokur, PS Riewe, LC Hash, GL

Citation: Mr. Shaneyfelt et al., Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs, IEEE NUCL S, 47(6), 2000, pp. 2539-2545

Authors: Winokur, PS Lum, GK Shaneyfelt, MR Sexton, FW Hash, GL Scott, L

Citation: Ps. Winokur et al., Use of COTS microelectronics in radiation environments, IEEE NUCL S, 46(6), 1999, pp. 1494-1503

Authors: Dodd, PE Musseau, O Shaneyfelt, MR Sexton, FW D'hose, C Hash, GL Martinez, M Loemker, RA Leray, JL Winokur, PS

Citation: Pe. Dodd et al., Impact of ion energy on single-event upset, IEEE NUCL S, 45(6), 1998, pp. 2483-2491

Authors: Sexton, FW Fleetwood, DM Shaneyfelt, MR Dodd, PE Hash, GL Schanwald, LP Loemker, RA Krisch, KS Green, ML Weir, BE Silverman, PJ

Citation: Fw. Sexton et al., Precursor ion damage and angular dependence of single event gate rupture in thin oxides, IEEE NUCL S, 45(6), 1998, pp. 2509-2518