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Results: 1-23 |
Results: 23
Glutamine metabolism to glucosamine is necessary for glutamine inhibition of endothelial nitric oxide synthesis
Authors: Wu, GY Haynes, TE Li, H Yan, W Meininger, CJ
Citation: Gy. Wu et al., Glutamine metabolism to glucosamine is necessary for glutamine inhibition of endothelial nitric oxide synthesis, BIOCHEM J, 353, 2001, pp. 245-252
Regulatory role of arginase I and II in nitric oxide, polyamine, and proline syntheses in endothelial cells
Authors: Li, H Meininger, CJ Hawker, JR Haynes, TE Kepka-Lenhart, D Mistry, SK Morris, SM Wu, GY
Citation: H. Li et al., Regulatory role of arginase I and II in nitric oxide, polyamine, and proline syntheses in endothelial cells, AM J P-ENDO, 280(1), 2001, pp. E75-E82
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Authors: Kalyanaraman, R Haynes, TE Yoon, M Larson, BC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter, NUCL INST B, 175, 2001, pp. 182-186
Role of magnetostatic interactions in assemblies of Fe nanoparticles
Authors: Schulthess, TC Benakli, M Visscher, PB Sorge, KD Thompson, JR Modine, FA Haynes, TE Boatner, LA Stocks, GM Butler, WH
Citation: Tc. Schulthess et al., Role of magnetostatic interactions in assemblies of Fe nanoparticles, J APPL PHYS, 89(11), 2001, pp. 7594-7596
Ta-based interface ohmic contacts to AlGaN/GaN heterostructures
Authors: Qiao, D Jia, L Yu, LS Asbeck, PM Lau, SS Lim, SH Liliental-Weber, Z Haynes, TE Barner, JB
Citation: D. Qiao et al., Ta-based interface ohmic contacts to AlGaN/GaN heterostructures, J APPL PHYS, 89(10), 2001, pp. 5543-5546
Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia
Authors: Sorge, KD Thompson, JR Schulthess, TC Modine, FA Haynes, TE Honda, S Meldrum, A Budai, JD White, CW Boatner, LA
Citation: Kd. Sorge et al., Oriented, single domain Fe nanoparticle layers in single crystal yttria-stabilized zirconia, IEEE MAGNET, 37(4), 2001, pp. 2197-2199
Presence of glutamine : fructose-6-phosphate amidotransferase for glucosamine-6-phosphate synthesis in endothelial cells: effects of hyperglycaemia and glutamine
Authors: Wu, G Haynes, TE Yan, W Meininger, CJ
Citation: G. Wu et al., Presence of glutamine : fructose-6-phosphate amidotransferase for glucosamine-6-phosphate synthesis in endothelial cells: effects of hyperglycaemia and glutamine, DIABETOLOG, 44(2), 2001, pp. 196-202
Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Authors: Venezia, VC Pelaz, L Gossmann, HJL Haynes, TE Rafferty, CS
Citation: Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275
Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation
Authors: Lopez, R Boatner, LA Haynes, TE Haglund, RF Feldman, LC
Citation: R. Lopez et al., Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation, APPL PHYS L, 79(19), 2001, pp. 3161-3163
Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Authors: Kalyanaraman, R Haynes, TE Holland, OW Gossmann, HJL Rafferty, CS Gilmer, GH
Citation: R. Kalyanaraman et al., Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, APPL PHYS L, 79(13), 2001, pp. 1983-1985
Glutamine metabolism in endothelial cells: ornithine synthesis from glutamine via pyrroline-5-carboxylate synthase
Authors: Wu, GY Haynes, TE Li, H Meininger, CJ
Citation: Gy. Wu et al., Glutamine metabolism in endothelial cells: ornithine synthesis from glutamine via pyrroline-5-carboxylate synthase, COMP BIOC A, 126(1), 2000, pp. 115-123
Defects and diffusion in silicon technology
Authors: Haynes, TE
Citation: Te. Haynes, Defects and diffusion in silicon technology, MRS BULL, 25(6), 2000, pp. 14-15
Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding
Authors: Zheng, Y Moran, PD Guan, ZF Lau, SS Hansen, DM Kuech, TF Haynes, TE Hoechbauer, T Nastasi, M
Citation: Y. Zheng et al., Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding, J ELEC MAT, 29(7), 2000, pp. 916-920
A study of the Au/Ni ohmic contact on p-GaN
Authors: Qiao, D Yu, LS Lau, SS Lin, JY Jiang, HX Haynes, TE
Citation: D. Qiao et al., A study of the Au/Ni ohmic contact on p-GaN, J APPL PHYS, 88(7), 2000, pp. 4196-4200
Glucosamine inhibits inducible nitric oxide synthesis
Authors: Meininger, CJ Kelly, KA Li, H Haynes, TE Wu, GY
Citation: Cj. Meininger et al., Glucosamine inhibits inducible nitric oxide synthesis, BIOC BIOP R, 279(1), 2000, pp. 234-239
Magneto-optical effects from nanophase alpha-Fe and Fe3O4 precipitates formed in yttrium-stabilized ZrO2 by ion implantation and annealing
Authors: Honda, S Modine, FA Meldrum, A Budai, JD Haynes, TE Boatner, LA
Citation: S. Honda et al., Magneto-optical effects from nanophase alpha-Fe and Fe3O4 precipitates formed in yttrium-stabilized ZrO2 by ion implantation and annealing, APPL PHYS L, 77(5), 2000, pp. 711-713
Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)]
Authors: Venezia, VC Brown, RA Kalyanaraman, R Haynes, TE Holland, OW Williams, JS
Citation: Vc. Venezia et al., Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)], APPL PHYS L, 77(1), 2000, pp. 151-152
Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling
Authors: Kalyanaraman, R Haynes, TE Venezia, VC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling, APPL PHYS L, 76(23), 2000, pp. 3379-3381
Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy (vol 37, pg 6524, 1998)
Authors: Taga, N Maekawa, M Shigesato, Y Yasui, I Kamei, M Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy (vol 37, pg 6524, 1998), JPN J A P 1, 38(3A), 1999, pp. 1596-1596
Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon
Authors: Venezia, VC Haynes, TE Agarwal, A Pelaz, L Gossmann, HJ Jacobson, DC Eaglesham, DJ
Citation: Vc. Venezia et al., Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon, APPL PHYS L, 74(9), 1999, pp. 1299-1301
Boron-enhanced diffusion of boron from ultralow-energy ion implantation
Authors: Agarwal, A Gossmann, HJ Eaglesham, DJ Herner, SB Fiory, AT Haynes, TE
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron from ultralow-energy ion implantation, APPL PHYS L, 74(17), 1999, pp. 2435-2437
Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy
Authors: Taga, N Maekawa, M Shigesato, Y Yasui, I Kakei, M Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy, JPN J A P 1, 37(12A), 1998, pp. 6524-6529
Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation
Authors: Weldon, MK Collot, M Chabal, YJ Venezia, VC Agarwal, A Haynes, TE Eaglesham, DJ Christman, SB Chaban, EE
Citation: Mk. Weldon et al., Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation, APPL PHYS L, 73(25), 1998, pp. 3721-3723
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