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Results: 1-25 | 26-27
Results: 1-25/27
Selective dry etching of InGaP over GaAs in inductively coupled plasmas
Authors: Leerungnawarat, P Cho, H Hays, DC Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Abernathy, CR Pearton, SJ
Citation: P. Leerungnawarat et al., Selective dry etching of InGaP over GaAs in inductively coupled plasmas, J ELEC MAT, 29(5), 2000, pp. 586-590
Dry etch selectivity of Gd2O3 to GaN and AlN
Authors: Hays, DC Lee, KP Gila, BP Ren, F Abernathy, CR Pearton, SJ
Citation: Dc. Hays et al., Dry etch selectivity of Gd2O3 to GaN and AlN, J ELEC MAT, 29(3), 2000, pp. 285-290
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartI: GaAs, GaSb, and AlGaAs, PLASMA CHEM, 20(3), 2000, pp. 405-415
Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Lambers, ES Abernathy, CR Pearton, SJ Hobson, WS Shul, RJ
Citation: Yb. Hahn et al., Inductively coupled plasma etching in ICl- and IBr-based chemistries. PartII: InP, InSb, InGaP, and InGaAs, PLASMA CHEM, 20(3), 2000, pp. 417-427
Surface morphology and removal rates for dry- and wet-etched novel resonator materials Part I. La3Ga5.5Ta0.5O14
Authors: Hays, DC Leerungnawarat, P Pearton, SJ Archibald, G Smythe, RC
Citation: Dc. Hays et al., Surface morphology and removal rates for dry- and wet-etched novel resonator materials Part I. La3Ga5.5Ta0.5O14, APPL SURF S, 165(2-3), 2000, pp. 127-134
Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14
Authors: Hays, DC Leerungnawarat, P Pearton, SJ Archibald, G Smythe, RC
Citation: Dc. Hays et al., Surface morphology and removal rates for dry- and wet-etched novel resonator materials - Part II. La3Ga5.5Nb0.5O14, APPL SURF S, 165(2-3), 2000, pp. 135-140
High selectivity Inductively Coupled Plasma etching of GaAs over InGaP
Authors: Hays, DC Cho, H Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Meyer, LC Toussaint, E Ren, F Abernathy, CR Pearton, SJ
Citation: Dc. Hays et al., High selectivity Inductively Coupled Plasma etching of GaAs over InGaP, APPL SURF S, 156(1-4), 2000, pp. 76-84
Ultradeep, low-damage dry etching of SiC
Authors: Cho, H Leerungnawarat, P Hays, DC Pearton, SJ Chu, SNG Strong, RM Zetterling, CM Ostling, M Ren, F
Citation: H. Cho et al., Ultradeep, low-damage dry etching of SiC, APPL PHYS L, 76(6), 2000, pp. 739-741
Interhalogen plasma chemistries for the etching of NiMnSb
Authors: Cho, H Jung, KB Hahn, YB Hays, DC Caballero, JA Childress, JR Pearton, SJ
Citation: H. Cho et al., Interhalogen plasma chemistries for the etching of NiMnSb, EL SOLID ST, 2(2), 1999, pp. 70-71
GaAs/InGaP selective etching in BCl3/SF6 high-density plasmas
Authors: Hays, DC Cho, H Lee, JW Devre, MW Reelfs, BH Johnson, D Sasserath, JN Meyer, LC Toussaint, E Ren, F Pearton, SJ
Citation: Dc. Hays et al., GaAs/InGaP selective etching in BCl3/SF6 high-density plasmas, EL SOLID ST, 2(11), 1999, pp. 587-588
Via-hole etching for SiC
Authors: Leerungnawarat, P Hays, DC Cho, H Pearton, SJ Strong, RM Zetterling, CM Ostling, M
Citation: P. Leerungnawarat et al., Via-hole etching for SiC, J VAC SCI B, 17(5), 1999, pp. 2050-2054
Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture
Authors: Hahn, YB Lee, JW Vawter, GA Shul, RJ Abernathy, CR Hays, DC Lambers, ES Pearton, SJ
Citation: Yb. Hahn et al., Reactive ion beam etching of GaAs and related compounds in an inductively coupled plasma of Cl-2-Ar mixture, J VAC SCI B, 17(2), 1999, pp. 366-371
Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Donovan, SM Pearton, SJ Han, J Shul, RJ
Citation: Yb. Hahn et al., Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN, MAT SCI E B, 60(2), 1999, pp. 95-100
Cl-2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn
Authors: Jung, KB Cho, H Hahn, YB Hays, DC Feng, T Park, YD Childress, JR Pearton, SJ
Citation: Kb. Jung et al., Cl-2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn, MAT SCI E B, 60(2), 1999, pp. 101-106
Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures
Authors: Cho, H Jung, KB Hays, DC Hahn, YB Feng, T Park, YD Childress, JR Cadieu, FJ Rani, R Qian, XR Chen, L Pearton, SJ
Citation: H. Cho et al., Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures, MAT SCI E B, 60(2), 1999, pp. 107-111
Damage to III-V devices during electron cyclotron resonance chemical vapordeposition
Authors: Lee, JW Mackenzie, KD Johnson, D Hahn, YB Hays, DC Abernathy, CR Ren, F Pearton, SJ
Citation: Jw. Lee et al., Damage to III-V devices during electron cyclotron resonance chemical vapordeposition, J VAC SCI A, 17(4), 1999, pp. 2183-2187
Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries
Authors: Cho, H Hahn, YB Hays, DC Abernathy, CR Donovan, SM MacKenzie, JD Pearton, SJ Han, J Shul, RJ
Citation: H. Cho et al., Ill-nitride dry etching: Comparison of inductively coupled plasma chemistries, J VAC SCI A, 17(4), 1999, pp. 2202-2208
Effect of inert gas additive on Cl-2-based inductively coupled plasma etching of NiFe and NiFeCo
Authors: Jung, KB Cho, H Hahn, YB Hays, DC Lambers, ES Park, YD Feng, T Childress, JR Pearton, SJ
Citation: Kb. Jung et al., Effect of inert gas additive on Cl-2-based inductively coupled plasma etching of NiFe and NiFeCo, J VAC SCI A, 17(4), 1999, pp. 2223-2227
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
Authors: Hahn, YB Hays, DC Donovan, SM Abernathy, CR Han, J Shul, RJ Cho, H Jung, KB Pearton, SJ
Citation: Yb. Hahn et al., Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN, J VAC SCI A, 17(3), 1999, pp. 768-773
Plasma chemistries for high density plasma etching of SiC
Authors: Hong, J Shul, RJ Zhang, L Lester, LF Cho, H Hahn, YB Hays, DC Jung, KB Pearton, SJ Zetterling, CM Ostling, M
Citation: J. Hong et al., Plasma chemistries for high density plasma etching of SiC, J ELEC MAT, 28(3), 1999, pp. 196-201
Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP
Authors: Hays, DC Cho, H Jung, KB Hahn, YB Abernathy, CR Pearton, SJ Ren, F Hobson, WS
Citation: Dc. Hays et al., Selective dry etching using inductively coupled plasmas Part I. GaAs AlGaAs and GaAs InGaP, APPL SURF S, 147(1-4), 1999, pp. 125-133
Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN
Authors: Hays, DC Cho, H Jung, KB Hahn, YB Abernathy, CR Pearton, SJ Ren, F Hun, J Shul, RJ
Citation: Dc. Hays et al., Selective dry etching using inductively coupled plasmas Part II. InN GaN and InN AlN, APPL SURF S, 147(1-4), 1999, pp. 134-139
Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part I. GaAs and GaSb
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Pearton, SJ Shul, RJ
Citation: Yb. Hahn et al., Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part I. GaAs and GaSb, APPL SURF S, 147(1-4), 1999, pp. 207-214
Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part II. InP, InSb, InGaP and InGaAs
Authors: Hahn, YB Hays, DC Cho, H Jung, KB Abernathy, CR Pearton, SJ Shul, RJ
Citation: Yb. Hahn et al., Effect of inert gas additive species on Cl-2 high density plasma etching of compound semiconductors Part II. InP, InSb, InGaP and InGaAs, APPL SURF S, 147(1-4), 1999, pp. 215-221
Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films
Authors: Cho, H Jung, KB Hays, DC Hahn, YB Lambers, ES Feng, T Park, YD Childress, JR Pearton, SJ
Citation: H. Cho et al., Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films, APPL SURF S, 140(1-2), 1999, pp. 215-222
Risultati: 1-25 | 26-27