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Results:
1-8
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Results: 8
Authors:
Pei, CW
Turk, B
Heroux, JB
Wang, WI
Citation: Cw. Pei et al., GaN grown by molecular beam epitaxy with antimony as surfactant, J VAC SCI B, 19(4), 2001, pp. 1426-1428
Authors:
Yang, X
Heroux, JB
Mei, LF
Wang, WI
Citation: X. Yang et al., InGaAsNSb/GaAs quantum wells for 1.55 mu m lasers grown by molecular-beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4068-4070
Authors:
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
Citation: X. Yang et al., High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1484-1487
Authors:
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
Citation: X. Yang et al., Low-threshold 1.3-mu m InGaAsN : Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy, IEEE PHOTON, 12(2), 2000, pp. 128-130
Authors:
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
Citation: X. Yang et al., High-temperature characteristics of 1.3 mu m InGaAsN : Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy, APPL PHYS L, 76(7), 2000, pp. 795-797
Authors:
Yang, X
Heroux, JB
Jurkovic, MJ
Wang, WI
Citation: X. Yang et al., Photoluminescence of as-grown and thermally annealed InGaAsN GaAs quantum wells grown by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1144-1146
Authors:
Yang, X
Jurkovic, MJ
Heroux, JB
Wang, WI
Citation: X. Yang et al., Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant, ELECTR LETT, 35(13), 1999, pp. 1082-1083
Authors:
Yang, X
Jurkovic, MJ
Heroux, JB
Wang, WI
Citation: X. Yang et al., Molecular beam epitaxial growth of InGaAsN : Sb/GaAs quantum wells for long-wavelength semiconductor lasers, APPL PHYS L, 75(2), 1999, pp. 178-180
Risultati:
1-8
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