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Results: 1-11 |
Results: 11
Electron and hole trapping in thermal oxides that have been ion implanted
Authors: Mrstik, BJ Hughes, HL McMarr, PJ Gouker, P
Citation: Bj. Mrstik et al., Electron and hole trapping in thermal oxides that have been ion implanted, MICROEL ENG, 59(1-4), 2001, pp. 285-289
Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures
Authors: Krauser, J Revesz, AG Hughes, HL
Citation: J. Krauser et al., Nuclear reaction analysis of hydrogen in the buried SiO2 layer of Si/SiO2/Si structures, J NON-CRYST, 296(1-2), 2001, pp. 143-145
Hole and electron trapping in ion implanted thermal oxides and SIMOX
Authors: Mrstik, BJ Hughes, HL McMarr, PJ Lawrence, RK Ma, DI Isaacson, IP Walker, RA
Citation: Bj. Mrstik et al., Hole and electron trapping in ion implanted thermal oxides and SIMOX, IEEE NUCL S, 47(6), 2000, pp. 2189-2195
Hydrogen in buried SiO2 layers
Authors: Revesz, AG Stahlbush, RE Hughes, HL
Citation: Ag. Revesz et al., Hydrogen in buried SiO2 layers, J ELCHEM SO, 147(11), 2000, pp. 4279-4281
Gay men, travel and HIV risk
Authors: Hughes, HL
Citation: Hl. Hughes, Gay men, travel and HIV risk, TOUR MANAGE, 20(3), 1999, pp. 377-378
Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions
Authors: Rebohle, L Revesz, AG Skorupa, W Hughes, HL
Citation: L. Rebohle et al., Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions, MICROEL ENG, 48(1-4), 1999, pp. 335-338
Effects of heat treatments in inert ambients on Si/SiO2 structures
Authors: Revesz, AG Hughes, HL
Citation: Ag. Revesz et Hl. Hughes, Effects of heat treatments in inert ambients on Si/SiO2 structures, J NON-CRYST, 254, 1999, pp. 47-56
A 5 nm nitrided gate oxide for 0.25 mu m SOICMOS technologies
Authors: Liu, ST Fechner, P Balster, S Dougal, G Sinha, S Chen, H Shaw, G Yue, J Jenkins, WC Hughes, HL
Citation: St. Liu et al., A 5 nm nitrided gate oxide for 0.25 mu m SOICMOS technologies, IEEE NUCL S, 46(6), 1999, pp. 1824-1829
H+ motion in SiO2: Incompatible results from hydrogen-annealing and radiation models
Authors: Stahlbush, RE Lawrence, RK Hughes, HL
Citation: Re. Stahlbush et al., H+ motion in SiO2: Incompatible results from hydrogen-annealing and radiation models, IEEE NUCL S, 45(6), 1998, pp. 2398-2407
Total dose radiation hard 0.35 mu m SOI CMOS technology
Authors: Liu, ST Jenkins, WC Hughes, HL
Citation: St. Liu et al., Total dose radiation hard 0.35 mu m SOI CMOS technology, IEEE NUCL S, 45(6), 1998, pp. 2442-2449
A study of the radiation sensitivity of non-crystalline SiO2 films using spectroscopic ellipsometry
Authors: Mrstik, BJ McMarr, PJ Lawrence, RK Hughes, HL
Citation: Bj. Mrstik et al., A study of the radiation sensitivity of non-crystalline SiO2 films using spectroscopic ellipsometry, IEEE NUCL S, 45(6), 1998, pp. 2450-2457
Risultati: 1-11 |