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Results: 1-14 |
Results: 14

Authors: Bolch, WE Farfan, EB Huh, C Huston, TE Bolch, WE
Citation: We. Bolch et al., Influences of parameter uncertainties within the ICRP 66 respiratory tractmodel: Particle deposition, HEALTH PHYS, 81(4), 2001, pp. 378-394

Authors: Huh, C Kim, SW Kim, HM Kim, DJ Park, SJ
Citation: C. Huh et al., Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN, APPL PHYS L, 78(13), 2001, pp. 1942-1944

Authors: Huh, C Kim, SW Kim, HS Kim, HM Hwang, H Park, SJ
Citation: C. Huh et al., Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes, APPL PHYS L, 78(12), 2001, pp. 1766-1768

Authors: Kim, MH Lee, SN Huh, C Park, SY Han, JY Seo, JM Park, SJ
Citation: Mh. Kim et al., Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN, PHYS REV B, 61(16), 2000, pp. 10966-10971

Authors: Huh, C Park, SJ
Citation: C. Huh et Sj. Park, Atomic force microscope tip-induced anodization of titanium film for nanofabrication of oxide patterns, J VAC SCI B, 18(1), 2000, pp. 55-59

Authors: Huh, C Kim, NK Lee, Y
Citation: C. Huh et al., On exchange rings with primitive factor rings artinian, COMM ALGEB, 28(10), 2000, pp. 4989-4993

Authors: Huh, C Kim, HS Kim, SW Lee, JM Kim, DJ Lee, IH Park, SJ
Citation: C. Huh et al., InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN, J APPL PHYS, 87(9), 2000, pp. 4464-4466

Authors: Huh, C Kim, SW Kim, HS Lee, IH Park, SJ
Citation: C. Huh et al., Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution, J APPL PHYS, 87(9), 2000, pp. 4591-4593

Authors: Lee, JM Chang, KM Kim, SW Huh, C Lee, IH Park, SJ
Citation: Jm. Lee et al., Dry etch damage in n-type GaN and its recovery by treatment with an N-2 plasma, J APPL PHYS, 87(11), 2000, pp. 7667-7670

Authors: Kim, H Yang, H Huh, C Kim, SW Park, SJ Hwang, H
Citation: H. Kim et al., Electromigration-induced failure of GaN multi-quantum well light emitting diode, ELECTR LETT, 36(10), 2000, pp. 908-910

Authors: Kim, H Lee, JM Huh, C Kim, SW Kim, DJ Park, SJ Hwang, H
Citation: H. Kim et al., Modeling of a GaN-based light-emitting diode for uniform current spreading, APPL PHYS L, 77(12), 2000, pp. 1903-1904

Authors: Kim, SW Lee, JM Huh, C Park, NM Kim, HS Lee, IH Park, SJ
Citation: Sw. Kim et al., Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment, APPL PHYS L, 76(21), 2000, pp. 3079-3081

Authors: Lee, Y Huh, C
Citation: Y. Lee et C. Huh, On rings in which every maximal one-sided ideal contains a maximal ideal, COMM ALGEB, 27(8), 1999, pp. 3969-3978

Authors: Huh, C Kang, CH Lee, HW Nakamura, H Mishima, M Tsuno, Y Yamataka, H
Citation: C. Huh et al., Thermodynamic stabilities and resonance demand of aromatic radical anions in the gas phase, B CHEM S J, 72(5), 1999, pp. 1083-1091
Risultati: 1-14 |