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Results: 1-11 |
Results: 11
Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system
Authors: Kizhaev, SS Molchanov, SS Zotova, NV Grebenshchikova, EA Yakovlev, YP Hulicius, E Simecek, T Melichar, K Pangrac, J
Citation: Ss. Kizhaev et al., Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system, TECH PHYS L, 27(11), 2001, pp. 964-966
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
Authors: Wilk, A Genty, F Fraisse, B Boissier, G Grech, P El Gazouli, M Christol, P Oswald, J Simecek, T Hulicius, E Joullie, A
Citation: A. Wilk et al., MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers, J CRYST GR, 223(3), 2001, pp. 341-348
Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs
Authors: Moiseev, KD Mikhailova, MP Yakovlev, YP Simecek, T Hulicius, E Oswald, J
Citation: Kd. Moiseev et al., Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs, J APPL PHYS, 90(6), 2001, pp. 2813-2817
Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots
Authors: Oswald, J Kuldova, K Zeman, J Hulicius, E Jullian, S Potemski, M
Citation: J. Oswald et al., Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots, MAT SCI E B, 69, 2000, pp. 318-323
InAs/GaAs multiple quantum dot structures grown by LP-MOVPE
Authors: Pangrac, J Oswald, J Hulicius, E Melichar, K Vorlicek, V Drbohlav, I Simecek, T
Citation: J. Pangrac et al., InAs/GaAs multiple quantum dot structures grown by LP-MOVPE, THIN SOL FI, 380(1-2), 2000, pp. 101-104
InAs/GaAs lasers with very thin active layer
Authors: Oswald, J Hulicius, E Pangrac, J Melichar, K Simecek, T Petricek, O Vancura, M Hradil, J
Citation: J. Oswald et al., InAs/GaAs lasers with very thin active layer, THIN SOL FI, 380(1-2), 2000, pp. 233-236
Deep levels in GaAs due to Si delta doping
Authors: Hubik, P Kristofik, J Mares, JJ Maly, J Hulicius, E Pangrac, J
Citation: P. Hubik et al., Deep levels in GaAs due to Si delta doping, J APPL PHYS, 88(11), 2000, pp. 6488-6494
InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m
Authors: Joullie, A Skouri, EM Garcia, M Grech, P Wilk, A Christol, P Baranov, AN Behres, A Kluth, J Stein, A Heime, K Heuken, M Rushworth, S Hulicius, E Simecek, T
Citation: A. Joullie et al., InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m, APPL PHYS L, 76(18), 2000, pp. 2499-2501
Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures
Authors: Moiseev, KD Mikhailova, MP Stoyanov, ND Yakovlev, YP Hulicius, E Simecek, T Oswald, J Pangrac, J
Citation: Kd. Moiseev et al., Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures, J APPL PHYS, 86(11), 1999, pp. 6264-6268
Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE
Authors: Hospodkova, A Hulicius, E Oswald, J Pangrac, J Melichar, K Simecek, T
Citation: A. Hospodkova et al., Strained InxGa1-xAs/GaAs multiple quantum wells grown by MOVPE, CZEC J PHYS, 49(5), 1999, pp. 805-811
Study of InAs quantum dots in GaAs prepared on misoriented substrates
Authors: Oswald, J Hulicius, E Vorlicek, V Pangrac, J Melichar, K Simecek, T Lippold, G Riede, V
Citation: J. Oswald et al., Study of InAs quantum dots in GaAs prepared on misoriented substrates, THIN SOL FI, 336(1-2), 1998, pp. 80-83
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