Authors: IONESCU AM CHOVET A POPESCU AE RUSU A STERIU D

Citation: Am. Ionescu et al., EXTRACTION METHOD FOR SOURCE SERIES RESISTANCE AND TRANSVERSE FIELD MOBILITY REDUCTION COEFFICIENT USING THE MOSFET SATURATION REGION, Microelectronics and reliability, 38(5), 1998, pp. 753-758

Authors: IONESCU AM CHOVET A CHAUDIER F

Citation: Am. Ionescu et al., JUNCTION INFLUENCE ON DRAIN CURRENT TRANSIENTS IN PARTIALLY-DEPLETED SOI MOSFETS, Electronics Letters, 33(20), 1997, pp. 1740-1742

Authors: IONESCU AM CRISTOLOVEANU S WILSON SR RUSU A CHOVET A SEGHIR H

Citation: Am. Ionescu et al., IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 228-232

Authors: IONESCU AM CRISTOLOVEANU S MUNTEANU D ELEWA T GRI M

Citation: Am. Ionescu et al., A NEW LIFETIME CHARACTERIZATION TECHNIQUE USING DRAIN CURRENT TRANSIENTS IN SOI MATERIAL, Solid-state electronics, 39(12), 1996, pp. 1753-1755

Authors: IONESCU AM RUSU A CHOVET A

Citation: Am. Ionescu et al., A PHYSICAL ANALYSIS OF DRAIN CURRENT TRANSIENTS AT LOW DRAIN VOLTAGE IN THIN-FILM SOI MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 431-434

Authors: IONESCU AM CRISTOLOVEANU S CHOVET A JARRON P HEIJNE E FACCIO F ROSSI G

Citation: Am. Ionescu et al., A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/, Microelectronic engineering, 22(1-4), 1993, pp. 391-394