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Results: 1-25/60
Authors:
LOSURDO M
CAPEZZUTO P
BRUNO G
LEFEBVRE PR
IRENE EA
Citation: M. Losurdo et al., STUDY OF THE MECHANISMS OF GAN FILM GROWTH ON GAAS-SURFACES BY THERMAL AND PLASMA NITRIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2665-2671
Authors:
LEFEBVRE PR
LAI L
IRENE EA
Citation: Pr. Lefebvre et al., COMPARISON OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF THERMAL AND PLASMA GROWN OXIDES ON GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 996-1001
Authors:
BASA C
HU YZ
TINANI M
IRENE EA
Citation: C. Basa et al., EFFECTS OF ION PRETREATMENTS ON THE NUCLEATION OF SILICON ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3223-3226
Authors:
BASA C
TINANI M
IRENE EA
Citation: C. Basa et al., ATOMIC-FORCE MICROSCOPY AND ELLIPSOMETRY STUDY OF THE NUCLEATION AND GROWTH-MECHANISM OF POLYCRYSTALLINE SILICON FILMS ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2466-2479
Authors:
ZHAO C
HU YZ
LABAYEN T
LAI L
IRENE EA
Citation: C. Zhao et al., COMPARISON OF SI SIO2 INTERFACE ROUGHNESS FROM ELECTRON-CYCLOTRON-RESONANCE PLASMA AND THERMAL-OXIDATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(1), 1998, pp. 57-62
Authors:
COLLINS RW
ASPNES DE
IRENE EA
Citation: Rw. Collins et al., SPECTROSCOPIC ELLIPSOMETRY - PROCEEDINGS OF THE 2ND INTERNATIONAL-CONFERENCE ON SPECTROSCOPIC ELLIPSOMETRY - CHARLESTON, SOUTH-CAROLINA, USA 12-15 MAY 1997 - PREFACE, Thin solid films, 313, 1998, pp. 11-12
Authors:
ZHAO C
LEFEBVRE PR
IRENE EA
Citation: C. Zhao et al., SPECTROSCOPIC IMMERSION ELLIPSOMETRY STUDY OF SIO2-SI INTERFACE ROUGHNESS FOR ELECTRON-CYCLOTRON-RESONANCE PLASMA AND THERMALLY OXIDIZED SISURFACES, Thin solid films, 313, 1998, pp. 286-291
Authors:
MICHAELIS A
IRENE EA
AUCIELLO O
KRAUSS AR
VEAL B
Citation: A. Michaelis et al., A SPECTROSCOPIC ANISOTROPY ELLIPSOMETRY STUDY OF YBA2CU3O7-X SUPERCONDUCTORS, Thin solid films, 313, 1998, pp. 362-367
Authors:
HU YZ
ZHAO CY
GAO WX
IRENE EA
Citation: Yz. Hu et al., A SQUARE LAW FOR THE ANALYSIS OF REAL-TIME ELLIPSOMETRIC NUCLEATION AND GROWTH DATA, Thin solid films, 313, 1998, pp. 416-419
Authors:
BASA C
HU YZ
IRENE EA
Citation: C. Basa et al., IN-SITU ELLIPSOMETRY FOR MONITORING NUCLEATION AND GROWTH OF SILICON ON SILICON DIOXIDE, Thin solid films, 313, 1998, pp. 424-429
Authors:
LEFEBVRE PR
ZHAO C
IRENE EA
Citation: Pr. Lefebvre et al., AN IN-SITU AND EX-SITU ELLIPSOMETRY COMPARISON OF THE INTERFACES OF SI AND GAAS RESULTING FROM THERMAL AND PLASMA OXIDATION, Thin solid films, 313, 1998, pp. 454-458
Authors:
MICHAELIS A
IRENE EA
AUCIELLO O
KRAUSS AR
Citation: A. Michaelis et al., A STUDY OF OXYGEN DIFFUSION IN AND OUT OF YBA2CU3O7-DELTA THIN-FILMS, Journal of applied physics, 83(12), 1998, pp. 7736-7743
Authors:
LEFEBVRE PR
IRENE EA
Citation: Pr. Lefebvre et Ea. Irene, COMPARISON OF SI AND GAAS INTERFACES RESULTING FROM THERMAL AND PLASMA OXIDATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1173-1181
Authors:
KRAUSS AR
AUCIELLO O
IM J
SMENTKOWSKI V
GRUEN DM
IRENE EA
CHANG RPH
Citation: Ar. Krauss et al., STUDIES OF FERROELECTRIC FILM GROWTH-PROCESSES USING IN-SITU, REAL-TIME ION-BEAM ANALYSIS, Integrated ferroelectrics, 18(1-4), 1997, pp. 351-368
Authors:
HU YZ
TAY SP
WASSERMAN Y
ZHAO CY
HEBERT KJ
IRENE EA
Citation: Yz. Hu et al., CHARACTERIZATION OF ULTRATHIN SIO2-FILMS GROWN BY RAPID THERMAL-OXIDATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 1394-1398
Authors:
HEBERT KJ
IRENE EA
Citation: Kj. Hebert et Ea. Irene, FOWLER-NORDHEIM TUNNELING CURRENT OSCILLATIONS AT METAL OXIDE/SI INTERFACES/, Journal of applied physics, 82(1), 1997, pp. 291-296
Authors:
FIRON M
HUGON MC
AGIUS B
HU YZ
WANG Y
IRENE EA
Citation: M. Firon et al., COMPARISON OF THE PHYSICAL AND ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE AND DISTRIBUTED ELECTRON-CYCLOTRON-RESONANCE SIO2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2543-2549
Authors:
WANG Y
HU YZ
IRENE EA
Citation: Y. Wang et al., IN-SITU INVESTIGATION OF THE PASSIVATION OF SI AND GE BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1687-1696
Authors:
IRENE EA
LIU Q
PAULSON WM
TOBIN PJ
HEGDE RI
Citation: Ea. Irene et al., MEASUREMENT OF N IN NITRIDED OXIDES USING SPECTROSCOPIC IMMERSION ELLIPSOMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1697-1701
Authors:
HU YZ
DIEHL DJ
ZHAO CY
WANG CL
LIU Q
IRENE EA
CHRISTENSEN KN
VENABLE D
MAHER DM
Citation: Yz. Hu et al., REAL-TIME INVESTIGATION OF NUCLEATION AND GROWTH OF SILICON ON SILICON DIOXIDE USING SILANE AND DISILANE IN A RAPID THERMAL-PROCESSING SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 744-750
Authors:
CONRAD KA
SAMPSON RK
MASSOUD HZ
IRENE EA
Citation: Ka. Conrad et al., DESIGN AND CONSTRUCTION OF A RAPID THERMAL-PROCESSING SYSTEM FOR IN-SITU OPTICAL MEASUREMENTS, Review of scientific instruments, 67(11), 1996, pp. 3954-3957
Authors:
HU YZ
ZHAO CY
BASA C
GAO WX
IRENE EA
Citation: Yz. Hu et al., EFFECTS OF HYDROGEN SURFACE PRETREATMENT OF SILICON DIOXIDE ON THE NUCLEATION AND SURFACE-ROUGHNESS OF POLYCRYSTALLINE SILICON FILMS PREPARED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(4), 1996, pp. 485-487
Authors:
AUCIELLO O
KRAUSS AR
IM J
GRUEN DM
IRENE EA
CHANG RPH
MCGUIRE GE
Citation: O. Auciello et al., STUDIES OF FILM GROWTH-PROCESSES AND SURFACE STRUCTURAL CHARACTERIZATION OF FERROELECTRIC MEMORY-COMPATIBLE SRBI2TA2O9 LAYERED PEROVSKITES VIA IN-SITU, REAL-TIME ION-BEAM ANALYSIS, Applied physics letters, 69(18), 1996, pp. 2671-2673
Authors:
HEBERT KJ
ZAFAR S
IRENE EA
KUEHN R
MCCARTHY TE
DEMIRLIOGLU EK
Citation: Kj. Hebert et al., MEASUREMENT OF THE REFRACTIVE-INDEX OF THIN SIO2-FILMS USING TUNNELING CURRENT OSCILLATIONS AND ELLIPSOMETRY, Applied physics letters, 68(2), 1996, pp. 266-268
Authors:
BUAUD PP
HU YZ
SPANOS L
IRENE EA
CHRISTENSEN KN
VENABLES D
MAHER DM
Citation: Pp. Buaud et al., A STUDY OF SILICON EPITAXIAL-GROWTH ON SILICON SUBSTRATES EXPOSED TO AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1442-1446