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Results:
1-21
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Results: 21
Authors:
PRETE P
AHMED MU
IRVINE SJC
SMITH LM
RUSHWORTH SA
Citation: P. Prete et al., SYSTEMATIC STUDIES OF IMPURITIES AND NITROGEN DOPING OF PHOTO-ASSISTED MOVPE GROWN ZNSE USING DESE2 DMZN, TEN AND TMSIN3, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 211-216
Authors:
IRVINE SJC
AHMED MU
PRETE P
Citation: Sjc. Irvine et al., THE KINETICS OF THE GROWTH OF NITROGEN-DOPED ZNSE GROWN BY PHOTO-ASSISTED MOVPE, Journal of electronic materials, 27(6), 1998, pp. 763-768
Authors:
AHMED MU
PRETE P
IRVINE SJC
STAFFORD A
SMITH LM
JONES AC
RUSHWORTH SA
Citation: Mu. Ahmed et al., MECHANISM FOR PHOTO-ASSISTED MOVPE NITROGEN DOPING OF ZNSE, Journal of crystal growth, 185, 1998, pp. 429-434
Authors:
IRVINE SJC
STAFFORD A
AHMED MU
PRETE P
BERRIGAN R
Citation: Sjc. Irvine et al., MOVPE OF II-VI MATERIALS, PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 35(2-4), 1997, pp. 177-206
Authors:
IRVINE SJC
STAFFORD A
AHMED MU
BROWN A
KHEYRANDISH H
Citation: Sjc. Irvine et al., NEW MECHANISMS IN PHOTO-ASSISTED MOVPE OF II-VI SEMICONDUCTORS, Journal of electronic materials, 26(6), 1997, pp. 723-727
Authors:
AHMED MU
IRVINE SJC
STAFFORD A
SMITH LM
JONES AC
RUSHWORTH SA
Citation: Mu. Ahmed et al., DECOMPOSITION BEHAVIOR OF NITROGEN PRECURSORS FOR P-TYPE DOPING OF PYROLYTIC AND PHOTOASSISTED MOVPE OF ZNSE, Journal of crystal growth, 180(2), 1997, pp. 167-176
Authors:
STAFFORD A
IRVINE SJC
GRIFFITHS CL
Citation: A. Stafford et al., IN-SITU MEASUREMENT OF THE THERMAL AND PHOTO-ASSISTED MOVPE OF ZNTE USING LASER REFLECTOMETRY, Journal of crystal growth, 170(1-4), 1997, pp. 182-187
Authors:
SVORONOS SA
WOO WW
IRVINE SJC
SANKUR HO
BAJAJ J
Citation: Sa. Svoronos et al., A MODEL OF THE INTERDIFFUSED MULTILAYER PROCESS, Journal of electronic materials, 25(9), 1996, pp. 1561-1571
Authors:
MUSCA CA
SILIQUINI JF
FYNN KA
NENER BD
FARAONE L
IRVINE SJC
Citation: Ca. Musca et al., MOCVD-GROWN WIDER-BANDGAP CAPPING LAYERS IN HG1-XCDXTE LONG-WAVELENGTH INFRARED PHOTOCONDUCTORS, Semiconductor science and technology, 11(12), 1996, pp. 1912-1922
Authors:
GRIFFITHS CL
STAFFORD A
IRVINE SJC
MAUNG N
JONES AC
SMITH LM
RUSHWORTH SA
Citation: Cl. Griffiths et al., DYNAMIC VAPOR-PRESSURE MEASUREMENTS OF THE DIMETHYL ZINC.TRIETHYLAMINE ADDUCT USING AN ULTRASONIC MONITOR, Applied physics letters, 68(9), 1996, pp. 1294-1296
Authors:
WOO WW
SVORONOS SA
SANKUR HO
BAJAJ J
IRVINE SJC
Citation: Ww. Woo et al., IN-SITU ESTIMATION OF MOCVD GROWTH-RATE VIA A MODIFIED KALMAN FILTER, AIChE journal, 42(5), 1996, pp. 1319-1325
Authors:
IRVINE SJC
BAJAJ J
GIL RV
GLASS H
Citation: Sjc. Irvine et al., INTEGRATED IN-SITU WAFER AND SYSTEM MONITORING FOR THE GROWTH OF CDTEZNTE/GAAS/SI FOR MERCURY CADMIUM TELLURIDE EPITAXY/, Journal of electronic materials, 24(5), 1995, pp. 457-465
Authors:
BUBULAC LO
EDWALL DD
IRVINE SJC
GERTNER ER
SHIN SH
Citation: Lo. Bubulac et al., P-TYPE DOPING OF DOUBLE-LAYER MERCURY CADMIUM TELLURIDE FOR JUNCTION FORMATION, Journal of electronic materials, 24(5), 1995, pp. 617-624
Authors:
MULLIN JB
IRVINE SJC
Citation: Jb. Mullin et Sjc. Irvine, METALORGANIC VAPOR-PHASE EPITAXY OF MERCURY CADMIUM TELLURIDE, Progress in crystal growth and characterization of materials, 29(1-4), 1994, pp. 217-252
Authors:
IRVINE SJC
BAJAJ J
GIL RV
Citation: Sjc. Irvine et al., INTEGRATED IN-SITU MONITORING OF A METALORGANIC VAPOR-PHASE EPITAXY REACTOR FOR II-VI EPITAXY, Journal of electronic materials, 23(2), 1994, pp. 167-173
Authors:
IRVINE SJC
BAJAJ J
Citation: Sjc. Irvine et J. Bajaj, A STUDY OF THE GROWTH-KINETICS OF II-VI METALORGANIC VAPOR-PHASE EPITAXY USING IN-SITU LASER REFLECTOMETRY, Journal of crystal growth, 145(1-4), 1994, pp. 74-81
Authors:
IRVINE SJC
BAJAJ J
BUBULAC LO
LIN WP
GEDRIDGE RW
HIGA KT
Citation: Sjc. Irvine et al., A NEW N-TYPE DOPING PRECURSOR FOR MOCVD-IMP GROWTH OF DETECTOR QUALITY MCT, Journal of electronic materials, 22(8), 1993, pp. 859-864
Authors:
BAJAJ J
IRVINE SJC
SANKUR HO
SVORONOS SA
Citation: J. Bajaj et al., MODELING OF IN-SITU MONITORED LASER REFLECTANCE DURING MOCVD GROWTH OF HGCDTE, Journal of electronic materials, 22(8), 1993, pp. 899-906
Authors:
IRVINE SJC
BAJAJ J
Citation: Sjc. Irvine et J. Bajaj, IN-SITU CHARACTERIZATION TECHNIQUES FOR MONITORING AND CONTROL OF VPEGROWTH OF HG1-XCDXTE, Semiconductor science and technology, 8(6), 1993, pp. 860-871
Authors:
BAJAJ J
TENNANT WE
ZUCCA R
IRVINE SJC
Citation: J. Bajaj et al., SPATIALLY-RESOLVED CHARACTERIZATION OF HGCDTE MATERIALS AND DEVICES BY SCANNING LASER MICROSCOPY, Semiconductor science and technology, 8(6), 1993, pp. 872-887
Authors:
KURTZ SR
BAJAJ J
EDWALL DD
IRVINE SJC
Citation: Sr. Kurtz et al., INFRARED PHOTOLUMINESCENCE CHARACTERIZATION OF LONG-WAVELENGTH HGCDTEDETECTOR MATERIALS, Semiconductor science and technology, 8(6), 1993, pp. 941-945
Risultati:
1-21
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